ROHM UMX21N Technical data
UMX21N
Transistors
High transition frequency (dual transistors)
UMX21N
zFeatures
1) Two 2SC4713K chips in a UMT p ackage.
2) Very low output-on resistan ce. (Ron)
3) Low capacitance.
zEquivalent circuit s
UMX21N
(3) (2) (1)
Tr
2
Tr
1
(4) (5) (6)
zDimensions (Unit : mm)
UMX21N
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
120mW per element must not be exceeded.
Parameter Symbol
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
Limits
12
6
C
C
3
50
150
150
−55 to +150
Unit
mA
mW
°C
°C
V
V
V
∗
zPackage, marking, and p ackaging specifications
Type UMX21N
Package
Marking
Code
Basic ordering unit (pieces)
UMT6
X21
TR
3000
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
−
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
f
Cob
Ron − 2 −ΩI
270
FE
300
T
−
12
6
3
−
−
−
800
−
−
−
−
−
0.5
−
0.5
−
0.3
−
560
−
−
1.7
1
I
V
C
=10µA
V
I
C
=1mA
V
I
E
=10µA
µA
V
CB
=10V
µA
V
EB
=2V
V
I
C/IB
=10mA/1mA
−
CE/IC
=5V/10mA
V
MHz
V
CE
=5V, IE= −10mA, f=200MHz
pF
V
CB
=10V, IE=0A, f=1MHz
B
=3mA, VI=100mVrms, f=500kHz
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
Rev.A 1/2
UMX21N
Transistors
zElectrical characteristics curves
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
10 2345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter output
characteristics ( )
1000
FE
500
200
100
50
20
DC CURRENT TRANSFER RATIO : h
10
COLLECTOR CURRENT : IC (mA)
Fig.4
DC current gain vs. collector current
20
(pF)
10
re
5
2
1
0.5
FEEDBACK CAPACITIANCE : C
0.2
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7
Collector output capacitance
vs. voltage
35mA
30mA
25mA
20mA
15mA
10mA
5mA
I
B
=0µ
Ta=25°C
V
CE
=5V
Ta=25°C
f=1MHz
50
Ta=25°C
(mA)
40
C
COLLECTOR CURRENT : I
A
1.0mA
30
20
10
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
characteristics ( )
0.5mA
0.4mA
0.10 0.2 0.3 0.4 0.5
Grounded emitter output
0.3mA
0.2mA
0.1mA
I
B
=
0mA
(mA)
1000
CE(sat)
500
200
100
50
20
10
5
500.1 200.2 100.5 512
COLLECTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
Ta=25°C
C/IB
=10
I
500.1 200.2 100.5 512
20
10
(pF)
ob
5
2
1
0.5
OUTPUT CAPACITANCE : C
0.2
500.1 200.2 100.5 512
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Back capacitance voltage
Ta=25°C
f=1MHz
500.1 200.2 100.5 512
50
(mA)
40
C
30
20
10
COLLECTOR CURRENT : I
0
Fig.3
°C
°C
25
125
0.40 0.8 1.2 1.6 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Grounded emitter propagation
characteristics
2000
1000
(MHz)
T
500
200
100
50
GAIN BANDWIDTH PRODUCT : f
20
COLLECTOR CURRENT : IC (mA)
Fig.6
Gain bandwidth product vs.
collector current
50
)
Ω
(
20
on
10
5
ON RESISTANE : R
2
1
BASS CURRENT : IB (mA)
Fig.9
Output-on resistance vs.
base current
°C
−25
V
CE
Ta=25°C
V
Ta=25°C
f=500kHz
υ
i=100mVrms
L
=1k
Ω
R
=
5V
CE
=5V
500.1 200.2 100.5 512
500.1 200.2 100.5 512
Rev.A 2/2
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