ROHM UMT3904, SST3904, MMST3904 Technical data

UMT3904 / SST3904 / MMST3904

Transistors

NPN General Purpose Transistor

UMT3904 / SST3904 / MMST3904

zFeatures

1) BVCEO > 40V (IC = 1mA)

2)

Complements the UMT3906 / SST3906 / MMST3906.

zPackage, marking and packaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit

(pieces)

UMT3904

UMT3

R1A

T106
3000

SST3904

SST3

R1A

T116

3000

MMST3904

SMT3

R1A

T146
3000

zAbsolute maximum ratings (Ta = 25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector
power
dissipation

Junction temperature
Storage temperature

∗

When mounted on a 7 x 5 x 0.6 mm ceramic board.

Parameter

UMT3904,
SST3904,
MMST3904
SST3904, MMST3904

Symbol

V

CBO

VCEO
VEBO

IC

P

Tj

Tstg

C

Limits

0.2

0.2

0.35
150

−55 to +150

Unit
60
40

6

V
V
V
A

W

W

∗

°C
°C

zElectrical characteristics (T a = 25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

DC current transfer ratio h

Transition frequency
Collector output capacitance
Emitter input capacitance Cib - - 8 pF
Delay time td - - 35 ns
Rise time tr - - 35 ns
Storage time tstg - - 200 ns
Fall time tf - - 50 ns

Parameter

Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

I

CES

I

EBO

CE(sat)

BE(sat)

f

Cob

CBO
CEO
EBO

FE

T

-

60

-

40

-

6

-

-

-

-

- - 0.2

- - 0.3 I

0.65 - 0.85

- - 0.95
40 - - V
70 - -

100 - 300 -

~

60 - ­30 - -

300--

--4

zDimensions (Unit : mm)

UMT3904

ROHM : UMT3
EIAJ : SC-70

SST3904

ROHM : SST3

MMST3904

ROHM : SMT3
EIAJ : SC-59

I

V

-

-

­50
50

C

= 10µA

V

I

C

= 1mA

V

I

E

= 10µA

nA

V

CB

= 30V

nA

V

EB

= 3V

IC/IB = 10mA/1mA

V

C/IB

= 50mA/5mA

C/IB

= 10mA/1mA

I

V

I

C/IB

= 50mA/5mA

CE

= 1V , IC = 0.1mA

V

CE

= 1V , IC = 1mA

V

CE

= 1V , IC = 10mA

V

CE

= 1V , IC = 50mA

V

CE

= 1V , IC = 100mA

CE

= 20V , IE = −10mA, f = 100MHz

MHzpFV

CB

= 10V , f = 100kHz

V

EB

= 0.5V , f = 100kHz

V
V

CC

= 3V , V

V

CC

= 3V , V

V

CC

= 3V , IC = 10mA , IB1 = −IB2 = 1mA

V

CC

= 3V , IC = 10mA , IB1 = −IB2 = 1mA

BE(OFF)
BE(OFF)

= 0.5V , IC = 10mA , IB1 = 1mA
= 0.5V , IC = 10mA , IB1 = 1mA

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

Rev.B 1/4

UMT3904 / SST3904 / MMST3904

Transistors

zElectrical characteristic curves

10

mA)

8

(

C

6

4

2

COLLECTOR CURRENT : I

0

COLLECTOR-EMITTER VOLTAGE : VCE (

40
35

30

25
20

15

10

5.0
IB=0µA

10

Fig.1 Grounded emitter output
characteristics

500

Ta=25°C

V)

V)

(

CE(sat)

0.3

0.2

0.1

0

200

0.1 1.0 10 100

COLLECTOR EMITTER SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (mA)

Fig.2 Collector-emitter saturation
voltage vs. collector current

Ta=25°C

Ta=25
IC / IB=10

°C

FE

100

DC CURRENT GAIN : h

10

5

0.1 101.0 100 1000
COLLECTOR CURRENT : IC (

VCE=1V

Fig.3 DC current gain vs. collector current ( Ι )

3V

mA)

5V

10V

500

FE

100

DC CURRENT GAIN : h

10

Ta=125°C

Ta=25°C

Ta=−55°C

5

0.1 101.0 100 1000

COLLECTOR CURRENT : IC (

mA)

Fig.4 DC current gain vs. collector current ( ΙΙ )

VCE=5V

Rev.B 2/4

UMT3904 / SST3904 / MMST3904

Transistors

500

FE

100

Ta=25
VCE=5V
f=1kHz

°C

(V)

1.8

BE(sat)

1.6

1.2

0.8

Ta=25°C
IC / IB=10

AC CURRENT GAIN : h

10

5

0.01 1.00.1 10 100
COLLECTOR CURRENT : IC (

mA)

Fig.5 AC current gain vs. collector current

0.4

0

BASE EMITTER SATURATION VOLTAGE : V

0.1 1.0 10 100
COLLECTOR CURRENT : IC (

mA)

Fig.6 Base-emitter saturation
voltage vs. collector current

1.8

(V)

1.6

BE(ON)

1.2

0.8

0.4

BASE EMITTER VOLTAGE : V

0

0.1 1.0 10 100
COLLECTOR CURRENT : IC (

Ta=25°C
VCE=5V

mA)

Fig.7 Grounded emitter propagation
characteristics

1000

ns)

100

TURN ON TIME : ton (

10

Ta=25
IC / IB=10

40V

15V

VCC=3V

1.0
COLLECTOR CURRENT : IC (

10 100

mA)

Fig.8 Turn-on time vs. collector
current

°C

1000

ns)

100

RISE TIME : tr (

10

1.0

VCC=40V

COLLECTOR CURRENT : IC (

10 100

Fig.9 Rise time vs. collector
current

Ta=25°C

C

/ IB=10

I

mA)

1000

ns)

40V

100

15V

STORAGE TIME : ts (

VCE=3V

10

1.0
COLLECTOR CURRENT : IC (

Ta=25°C

IC=10IB1=10I

10 100

Fig.10 Storage time vs. collector
current

mA)

1000

B2

ns)

100

FALL TIME : tf (

10

1.0
COLLECTOR CURRENT : IC (

10 100

Ta=25
VCC=40V

C/IB

=10

I

mA)

°C

Fig.11 Fall time vs. collector
current

50

pF)

10

Cib

Cob

CAPACITANCE (

1

0.5

0.1

1.0 10 100

REVERSE BIAS VOLTAGE (

Fig.12 Input / output capacitance
vs. voltage

Ta=25°C
f=1MHz

V)

Rev.B 3/4

UMT3904 / SST3904 / MMST3904

Transistors

100

V)

(

CE

100MHz 200MHz 400MHz

10

1.0

COLLECTOR-EMITTER VOLTAGE : V

0.1

0.1

300 MHz

300MHz

200MHz

1.0 10 100

COLLECTOR CURRENT : IC (

Fig.13 Gain bandwidth product

10µ

VCB=25V

A)

(

CBO

1µ

100n

Ta=25°C

500MHz

100MHz

mA)

1000

MHz)

(

T

100

10

1.0

COLLECTOR CURRENT : IC (

CURRENT GAIN-BANDWIDTH PRODUCT : f

Fig.14 Gain bandwidth product

10 100

vs. collector current

100k

(Ω)

S

10k

1.0dB

3dB

5dB

Ta=25°C
VCE=5V

mA)

Ta=25°C
VCE=5V
f=10kHz

12dB

8dB

100

hoe

10

hie

1

h PARAMETER NORMALIZED TO 1mA

0.1

0.1
COLLECTOR CURRENT : IC (

hre

hfe

Ta=25°C
IC=1mA
hie=3.84kΩ
hfe=141
hre=5.03 × 10

1 10 100

hoe=5.58µS

Fig.15 h parameter vs. collector current

100k

12dB

8dB

5dB

10k

1.0dB

3dB

VCE=5V
f=270Hz

mA)

Ta=25°C
VCE=5V
f=1kHz

−

5

10n

1n

0.1n

COLLECTOR CUTOFF CURRENT : I

0

ANBIENT TEMPERATURE : Ta (°C)

7525 50 100 125 150

Fig.16 Noise characteristics ( Ι )

100k

(Ω)

S

10k

NF=3.0dB

1k

5.0dB

SOURCE RESISTANCE : R

8.0dB

100

0.01

12dB

8dB

5dB

3dB

0.1 1 10

COLLECTOR CURRENT : IC (

Fig.19 Noise characteristics ( ΙV )

Ta=25°C
VCE=5V
f=10Hz

mA)

1k

SOURCE RESISTANCE : R

100

0.01

NF=1.0dB

3.0dB

5.0dB

8.0dB

0.1 1 10

COLLECTOR CURRENT : IC (

Fig.17 Noise characteristics ( ΙΙ )

12

10

8

6

4

NOISE FIGURE : NF (dB)

2

0

10 1k100 10k 100k

NF=1.0dB

1k

3.0dB

5.0dB

SOURCE RESISTANCE : RS (Ω)

8.0dB

100

mA)

0.01

0.1 1 10

COLLECTOR CURRENT : IC (

Fig.18 Noise characteristics ( ΙΙΙ )

FREQUENCY : f (Hz)

Fig.20 Noise vs. collector current

mA)

Ta=25°C
VCE=5V

C

=100µA

I

S

=10kΩ

R

Rev.B 4/4

Appendix

Notes

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Appendix1-Rev2.0