ROHM UMT3904, SST3904, MMST3904 Technical data
UMT3904 / SST3904 / MMST3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904
zFeatures
1) BVCEO > 40V (IC = 1mA)
2)
Complements the UMT3906 / SST3906 / MMST3906.
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
zAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board.
Parameter
UMT3904,
SST3904,
MMST3904
SST3904, MMST3904
Symbol
V
CBO
VCEO
VEBO
IC
P
Tj
Tstg
C
Limits
0.2
0.2
0.35
150
−55 to +150
Unit
60
40
6
V
V
V
A
W
W
∗
°C
°C
zElectrical characteristics (T a = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
DC current transfer ratio h
Transition frequency
Collector output capacitance
Emitter input capacitance Cib - - 8 pF
Delay time td - - 35 ns
Rise time tr - - 35 ns
Storage time tstg - - 200 ns
Fall time tf - - 50 ns
Parameter
Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
I
CES
I
EBO
CE(sat)
BE(sat)
f
Cob
CBO
CEO
EBO
FE
T
-
60
-
40
-
6
-
-
-
-
- - 0.2
- - 0.3 I
0.65 - 0.85
- - 0.95
40 - - V
70 - -
100 - 300 -
~
60 - 30 - -
300--
--4
zDimensions (Unit : mm)
UMT3904
ROHM : UMT3
EIAJ : SC-70
SST3904
ROHM : SST3
MMST3904
ROHM : SMT3
EIAJ : SC-59
I
V
-
-
50
50
C
= 10µA
V
I
C
= 1mA
V
I
E
= 10µA
nA
V
CB
= 30V
nA
V
EB
= 3V
IC/IB = 10mA/1mA
V
C/IB
= 50mA/5mA
C/IB
= 10mA/1mA
I
V
I
C/IB
= 50mA/5mA
CE
= 1V , IC = 0.1mA
V
CE
= 1V , IC = 1mA
V
CE
= 1V , IC = 10mA
V
CE
= 1V , IC = 50mA
V
CE
= 1V , IC = 100mA
CE
= 20V , IE = −10mA, f = 100MHz
MHzpFV
CB
= 10V , f = 100kHz
V
EB
= 0.5V , f = 100kHz
V
V
CC
= 3V , V
V
CC
= 3V , V
V
CC
= 3V , IC = 10mA , IB1 = −IB2 = 1mA
V
CC
= 3V , IC = 10mA , IB1 = −IB2 = 1mA
BE(OFF)
BE(OFF)
= 0.5V , IC = 10mA , IB1 = 1mA
= 0.5V , IC = 10mA , IB1 = 1mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B 1/4
UMT3904 / SST3904 / MMST3904
Transistors
zElectrical characteristic curves
10
mA)
8
(
C
6
4
2
COLLECTOR CURRENT : I
0
COLLECTOR-EMITTER VOLTAGE : VCE (
40
35
30
25
20
15
10
5.0
IB=0µA
10
Fig.1 Grounded emitter output
characteristics
500
Ta=25°C
V)
V)
(
CE(sat)
0.3
0.2
0.1
0
200
0.1 1.0 10 100
COLLECTOR EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
Ta=25
IC / IB=10
°C
FE
100
DC CURRENT GAIN : h
10
5
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
VCE=1V
Fig.3 DC current gain vs. collector current ( Ι )
3V
mA)
5V
10V
500
FE
100
DC CURRENT GAIN : h
10
Ta=125°C
Ta=25°C
Ta=−55°C
5
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
VCE=5V
Rev.B 2/4
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