ROHM EMT2, UMT2N, IMT2A Technical data

EMT2 / UMT2N / IMT2A

Transistors

General purpose (dual transistors)

EMT2 / UMT2N / IMT2A

zFeatures

1) Two 2SA1037AK chips in a EMT or UMT or SMT p ackage.

zEquivalent c ircuits

EMT2 / UMT2N

2

Tr

(4) (5) (6)

IMT2A

(1)(2)(3)

Tr1 Tr1

Tr2

(3) (2) (1)

(6)(5)(4)

zAbsolute maximum ratings (Ta=25°C)

C

Limits

−60

−50

−6

−150

150(TOTAL)
300(TOTAL)

150

−55

to

+150

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

EMT2 / UMT2N

IMT2A

Junction temperature
Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

zPackage, marking, and packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMT2
EMT6

T2

T2R

8000

UMT2N

UMT6

T2
TR

3000

IMT2A

SMT6

T2
T108
3000

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

∗Transition frequency of the device.

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

−60

−50

−6

−

−

−

120

−

−

Unit

V
V
V

mA

∗1

mW

∗2

°C
°C

−

−

−

−

−

−

−

140

45pF

zExternal dimensions (Unit : mm)

EMT2

(4)

0.22

(6)

0.13

ROHM : EMT6

UMT2N

)

5

(

0.2

0.15

0.1Min.

ROHM : UMT6
EIAJ : SC-88

IMT2A

)(

6

(

ROHM : SMT6
EIAJ : SC-74

Unit

V

−

V

−

V

−

−0.1

−0.1

−0.5

560

µA
µA

V

−

MHz

−

0.3

)(

5

)

4

0.15

0.3Min.

C

=−50µA

I

C

=−1mA

I

E

=−50µA

I
V

CB

=−60V

EB

=−6V

V

C/IB

=−50mA/−5mA

I

CE

=−6V, IC=−1mA

V
V

CE

=−12V, IE=2mA, f=100MHz

CE

=−12V, IE=0A, f=1MHz

V

1.2

1.6

)

4

(

)

6

(

1.6

2.8

Conditions

(3)

0.5

1.0

1.6

(2)(5)

0.5

(1)

0.5

Each lead has same dimensions

)

3

0.65

(

)

2

(

1.3

0.95

0.95

0.8

0.65

0.7

2.0

0.9

2.9

1.9

1.1

)

1

(

1.25

2.1

0~0.1

Each lead has same dimensions

)

1

(
)

2

(
)

3

(

0~0.1

Each lead has same dimensions

∗

Rev.A 1/2

Transistors

zElectrical characteristics curves

−50

Ta=100˚C

25˚C

−20

mA)

COLLECTOR CURRENT : Ic (

−40˚C

−10

−5

−2

−1

−0.5

−0.2

−0.1

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

Fig.1 Grounded emitter propagation

characteristics

500

Ta=25˚C

200

100

DC CURRENT GAIN : hFE

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR CURRENT : IC (

VCE= −5V

Fig.4 DC current gain vs.

collector current (I)

−1

V)

(

CE(sat)

−0.5

−0.2

Ta=100˚C

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR SATURATION VOLTAGE : V

25˚C

−40˚C

COLLECTOR CURRENT : IC (

Fig.7 Collector-emitter saturation

voltage vs. collector current (II)

−3V

−1V

VCE= −6V

mA)

lC/lB=10

mA)

EMT2 / UMT2N / IMT2A

−10

−8

mA)

(

C

−6

−4

−2

COLLECTOR CURRENT : I

V)

COLLECTOR TO MITTER VOLTAGE : VCE (

Fig.2 Grounded emitter output

500

FE

200

100

50

DC CURRENT GAIN : h

−0.2 −0.5 −1 −2 −5 −10 −20 −50−100

1000

500

MHz)

(

T

200

100

50

TRANSITION FREQUENCY : f

Fig.8 Gain bandwidth product vs.

Ta=25˚C

−1.20

−0.8 −1.6 −2.0

−0.4

characteristics (I)

Ta=100˚C

25˚C

−40˚C

COLLECTOR CURRENT : IC (

Fig.5 DC current gain vs.

collector current (II)

Ta=25˚C

V

12 510

EMITTER CURRENT : I

emitter current

E

(

mA)

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

I

B

VCE= −6V

mA)

CE

= −

12V

50 1000.5 20

=0

−100

Ta=25˚C

)

−500

mA

(

−450

−80

C

−400

−350

−300

−60

−40

−20

COLLECTOR CURRENT : I

0

V)

COLLECTOR TO EMITTER VOLTAGE : VCE (

Fig.3 Grounded emitter output

characteristics (II)

−1

V)

(

CE(sat)

−0.5

−0.2

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR SATURATION VOLTAGE : V

IC/IB=

50

20
10

COLLECTOR CURRENT : IC (

Fig.6 Collector-emitter saturation

voltage vs. collector current (I)

20

pF)

pF)

10

5

2

COLLECTOR TO BASE VOLTAGE : VCB (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

EMITTER INPUT CAPACITANCE : Cib (

EMITTER TO BASE VOLTAGE : V

Cib

Cob

−0.5 −20

−1 −2 −5 −10

Fig.9 Collector output capacitance vs.

collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage

−250

−200

−150

−100

−50µA

IB=0

Ta=25˚C

mA)

Ta=25˚C

f=1MHz

I

E

=

0A

I

C

=

0A

EB

(V)

−5−3 −4−2−1

V)

Rev.A 2/2