ROHM UMT2222A, SST2222A, MMST2222A Technical data
UMT2222A / SST2222A / MMST2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A
zFeatu res
1) BV
CEO > 40V (IC=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A.
zPackage, marking, and p ackaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
zAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board
Parameter
UMT2222A,SST2222A,
MMST2222A
SST2222A
Symbol
V
V
V
Tstg
Limits
CBO
CEO
EBO
I
C
0.6
0.2
P
C
0.35
150
Tj
−
55 to +150
Unit
75
40
6
V
V
V
A
W
∗
W
°C
°C
zElectrical characteristics (T a = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
BE(sat)
V
FE
h
f
T
Cob
Cib −−25 pF
td −−10 ns
tr −−25 ns
tstg −−225 ns
tf −−60 ns
−
75
−
40
−
6
−
−
−
−
−−0.3
−−1I
0.6 − 1.2
−−2
35 −− V
50 −−
75 −−
50 −−
100 − 300 V
40 −−
300−−−−8MHzpFV
Rev.A
zDimensions (Unit : mm)
UMT2222A
ROHM : UMT3
EIAJ : SC-70
SST2222A
ROHM : SST3
MMST2222A
ROHM : SMT3
EIAJ : SC-59
I
V
100
100
−
−
−
nA
nA
V
V
V
V
−
C
=
10µA
I
C
=
10mA
I
E
=
10µA
V
CB
=
60V
V
EB
=
3V
IC/IB =
150mA/15mA
C/IB
=
500mA/50mA
C/IB
=
150mA/15mA
I
I
C/IB
=
500mA/50mA
CE
=
10V , IC =
V
CE
=
10V , IC =1
V
CE
=
10V , IC =
V
CE
=
1V , IC =
CE
=
10V , IC =
V
CE
=
10V , IC =
CE
=
20V , IC =−
CB
=
10V , f =100kHz
V
V
EB
=
0.5V , f =100kHz
V
CC
=
30V , V
V
CC
=
30V , V
V
CC
=
30V , IC =
V
CC
=
30V , IC =
0.1mA
mA
10mA
150mA
150mA
500mA
20mA, f =100MHz
BE(OFF)
=
0.5V , IC =
BE(OFF)
=
0.5V , IC =
150mA , I
150mA , I
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
150mA , I
B1
=
=
15mA
=
15mA
15mA
B1
=
15mA
150mA , I
B1
=−
I
B2
B1
=−
I
B2
1/3
UMT2222A / SST2222A / MMST2222A
Transistors
zElectrical characteristic curves
100
50
Ta=25°C
600
500
400
300
1000
FE
100
Ta
=25°C
V
CE
=
10V
200
COLLECTOR CURRENT : Ic(mA)
0
COLLECTOR-EMITTER VOLTAGE : V
100
IB=0µA
5
100
CE
(V)
Fig.1 Grounded emitter output
characteristics
(V)
CE(sat)
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
C
/ IB=10
I
1000
FE
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.3 DC current gain vs. collector current(Ι)
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
Ta
=125°C
25
°C
−55
°C
COLLECTOR CURRENT : Ic(mA)
Fig.4 DC current gain vs. collector current(ΙΙ)
Ta
V
=
f
=25°C
CE
1kHz
(V)
1.8
BE(sat)
=
10V
1.6
1.2
Ta=25°C
IC / I
1V
V
CE
=
10V
B
=10
100
AC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
0.8
0.4
BASE EMITTER SATURATION VOLTAGE : V
0
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Rev.A
2/3
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