ROHM EMT1, UMT1N, INT1A Technical data
EMT1 / UMT1N / IMT1A
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting mach ines.
3) Transistor elements are independent,
eliminating interference.
zStructure
Epitaxial planar type
PNP silicon transistor
zEquivalent circuit
EMT1 / UMT1N IMT1A
(3) (2) (1)
Tr
2
(4) (5) (6)
Tr
1
(4) (5) (6)
Tr
2
(3) (2) (1)
Tr
1
The following characteristics apply to both
Tr
1 and Tr2.
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
EMT1, UMT1N
IMT1A
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
−60
−50
−6
−150
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
zDimensions (Unit : mm)
EMT1
ROHM : EMT6
UMT1N
ROHM : UMT6
EIAJ : SC-88
IMT1A
(4) (5) (6)
(3) (2) (1)
ROHM : SMT6
EIAJ : SC-74
1
∗
2
∗
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
Abbreviated symbol : T1
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
Abbreviated symbol : T1
Each lead has same dimensions
Abbreviated symbol : T1
Rev.C 1/3
EMT1 / UMT1N / IMT1A
Transistors
zElectrical characteristics (T a = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
zPackaging specifications
Package Taping
Code
Type
Basic ordering unit (pieces)
EMT1
UMT1N
IMT1A
zElectrical characteristic curves
-50
Ta = 100°C
25°C
-20
−
40°C
(mA)
-10
-5
-2
-1
-0.5
COLLECTOR CURRENT : Ic
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
-0.2
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
VCE = −6V
BE
(V)
500
Ta = 25°C
FE
200
100
DC CURRENT GAIN : h
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector
current ( Ι )
VCE = -5V
-3V
-1V
C
(mA)
BV
BVCEO
BVEBO
VCE(sat)
Min.
Typ. Max. Unit Conditions
−
−
−
−6
−
−
−
−
−
−
−
−
140
−
4
TN
3000
ICBO
IEBO
hFE
fT
Cob
CBO
−60
−50
120
T2R
8000
−
−
−
-10
-8
(mA)
C
-6
-4
-2
COLLECTOR CURRENT : I
COLLECTOR TO EMITTER VOLTAGE : V
−
Ta = 25°C
-0.4
Fig.2 Grounded emitter output
characteristics ( Ι )
500
200
100
50
DC CURRENT GAIN : hFE
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
Ta = 100°C
COLLECTOR CURRENT : IC
Fig.5 DC current gain vs. collector
current ( ΙΙ )
−
−
−
−0.1
−0.1
−0.5
560
−
5
C = −50µA
VI
V
C = −1mA
I
E = −50µA
V
I
V
CB = −60V
µA
EB = −6V
V
µA
C/IB = −50mA/−5mA
V
I
V
CE = −6V, IC = −1mA
−
MHz
CE = −12V, IE = 2mA, f = 100MHz
V
V
CB = −12V, IE = 0A, f = 1MHz
pF
T110
3000
−
−
-35.0
-31.5
-28.0
-24.5
-21.0
-17.5
-14.0
-10.5
-7.0
-3.5µA
B
= 0
I
-1.20
-0.8 -1.6 -2.0
CE
25°C
-40°C
VCE = -6V
(mA)
(V)
-100
Ta = 25°C
-500
(mA)
-450
-80
C
-400
-350
-300
-60
-40
-20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
-1
(V)
CE(sat)
-0.5
-0.2
-0.1
-0.05
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR SATURATION VOLTAGE : V
IC/I
B = 50
20
10
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
-250
-200
-150
-100
-50µA
IB = 0
Ta = 25°C
C
(mA)
-5-3 -4-2-1
CE
(V)
Rev.C 2/3
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