ROHM EML6, UML6N Schematic [ru]

EML6 / UML6N

Transistors

General purpose transistor
(isolated transistor and diode)

EML6 / UML6N

2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.

zApplications

DC / DC converter
Motor driver

zFeatures

1) Tr : Low V
Di : Low V

CE(sat)
F

2) Small package

zStructure

Silicon epitaxial planar transistor
Schottky barrier diode

The following characteristics apply to both Di1 and T r2.

zEquivalent circuit (EML6 / UML6N)

(4)(5)

Tr2Di1

(1) (2) (3)

zPackaging specifications

Type EML6

Package

Marking

Code

Basic ordering unit (pieces)

EMT5

T2R

8000

L6

UML6N

UMT5

L6

TR

3000

Rev.C 1/4

zDimensions (Unit : mm)

EMT5

1.6

1.0

0.5

0.5

(4)

(5)

(3)

(2)

(1)

0.22

1pin mark

Each lead has same dimensions

Abbreviated symbol : L6

ROHM : EMT5

UMT5

1pin mark

ROHM : UMT5
EIAJ : SC-88A

2.0

1.3

0.65

0.65

(5)

(4)

(1)

(2)

(3)

0.2

Each lead has same dimensions

Abbreviated symbol : L6

0.5

1.2

1.6

0.13

0.9

0.7

2.1

1.25

0.15

0.1Min.

EML6 / UML6N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Di1

Parameter Symbol
Average revtified forward current
Forward current surge peak (60Hz, 1∞)
Reverse voltage (DC)
Junction temperature

Tr2

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature

∗1 Each terminal mounted on a recommended.

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

d

Tj

Di1 / Tr2

Parameter Symbol

P

Power dissipation
Storage temperature

∗ Each terminal mounted on a recommended.

d

Tstg

zElectrical characteristics (T a=25°C)
Di1

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

O

I

I

FSM

V

R

Tj

Limits

−55 to +125

V

I

R

BV

CEO
CBO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

Cob − 7.5 −

Limits

200

125

Limits

15
12

6

500

1
120
150

150

F

12
15

6

−−

−−

− 90

270 − 680

−

1

30

Unit

V
V
V

mA

A

∗1

mW

°C

Unit

∗

mW

°C

0.40 0.50 V

−

4.0 30

−

−−

−−

−−

320

Unit

mA

A
V

°C

100
100
250 mV

−

IF=200mA

µAVR=10V

V

I

C

=1mA

V

I

C

=10µA

V

I

E

=10µA
nA VCB=15V
nA VEB=6V

IC=200mA, IB=10mA

− V

CE

=2V, IC=10mA

MHz

VCE=2V, IE=−10mA, f=100MHz

CB

=10V, IE=0mA, f=1MHz

V

pF

Rev.C 2/4