ROHM UML1N Schematic [ru]

Transistors

Low-frequency transistor

UML1N

zFeatures

1) The 2SA1037AK and a diode are housed independently
in a UMT package.

zEquivalent circuit

(2)(3) (1)

Tr

Di

(5)(4)

zPackaging specifications

Type
Package
Marking
Code
Basic ordering unit(pieces)

FML10

SMT5

L10

TR

3000

zAbsolute maximum ratings (Ta=25°C)
Tr

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipatio
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pc
Tj

Tstg

Limits

−60

−50

−6

−0.15

0.15
150

−55 to +150

Di

Parameter
DC reverse voltage
Peak reverse voltage
Mean rectifying current
Peak forward voltage
Surge current
Junction temperature
Storage temperature
Specified I/O frequencies

Symbol

V

R

V

RM

I

O

I

FM

Isurge

Tj

Tstg

f

Limits

80
80

0.1

0.3
4

150

−55 to +150
100

zExternal dimensions (Unit : mm)

UMT5

Unit

V
V
V
A

W

°C
°C

Unit

V
V
A
A
A

°C
°C

MHz

1pin mark

UML1N

2.0

1.3

0.65

0.65

(6)

(4)

(1)

(2)

(3)

0.2

0.9

0.7

2.1

1.25

0.15

0.1Min.

Each lead has same dimensions

Rev.A 1/3

Transistors

zElectrical characteristics (Ta=25°C)
Tr

Collector-emitter breakdown voltage BV
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance

Di

Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

zElectrical characteristic curves

Tr

−50

−20

mA)

−10

−5

−2

−1

−0.5

COLLECTOR CURRENT : Ic (

−0.2

−0.1

Fig.1 Grounded emitter propagation

500

FE

200

100

DC CURRENT GAIN : h

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

Parameter Symbol Min. Typ. Max. Unit Conditions

Ta=100˚C

25˚C

−40˚C

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

VCE= −6V

V)

characteristics

Ta=25˚C

COLLECTOR CURRENT : IC (

VCE= −5V

−3V

−1V

mA)

Fig.4 DC current gain vs.

collector current (Ι)

−

CEO

BV
BV

V

I

CBO

I

EBO

CE(sat)

h

f

Cob

V

I

R

C

trr

−50

CBO

−60

EBO

FE

T

F

T

−6

120

−10

Ta=25˚C

−8

mA)

(

C

−6

−4

−2

COLLECTOR CURRENT : I

−0.4

COLLECTOR TO MITTER VOLTAGE : VCE (

−

−

−

−0.1

−

−

−

−

−

−

−

−

−

−

−0.1

−

−0.5

−

−

140

4

−

−

−

−

−1.20

−0.8 −1.6 −2.0

−

−

560

−

5

1.2

0.1

3.5
4

Fig.2 Grounded emitter output

characteristics (Ι)

500

FE

200

100

50

DC CURRENT GAIN : h

−0.2 −0.5 −1 −2 −5 −10 −20 −50−100

Ta=100˚C

25˚C

−40˚C

VCE= −6V

COLLECTOR CURRENT : IC (

Fig.5 DC current gain vs.

collector current (ΙΙ)

mA)

V
V
V

µA
µA

V

−

MHzpFV

V

µA

pF
ns

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

B

=0

I

I

C

= −1mA

I

C

= −50µA

I

E

= −50µA

V

CB

= −60V

V

EB

= −5V

I

C/IB

= −50mA/ −5mA

V

CE

= −6V, IC= −1mA

CE

= −12V, IE= 2mA, f= 100MHz

CB

= −12V, IE= 0A, f= 1MHz

V

I

F

=100mA

V

R

=70V

V

R

=6V, f=1MHz

V

R

=6V, IF=5mA, RL=50

−100

)

mA

(

−80

C

−60

−40

−20

COLLECTOR CURRENT : I

0

V)

COLLECTOR TO EMITTER VOLTAGE : VCE (

Ta=25˚C

−500

−450

−400

−350

−300

Ω

Fig.3 Grounded emitter output

characteristics (ΙΙ)

−1

V)

−0.5

−0.2

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR SATURATION VOLTAGE : VCE(sat) (

IC/IB=

50

20
10

COLLECTOR CURRENT : IC (

Fig.6 Collector-emitter saturation

voltage vs. collector current (Ι)

UML1N

−250

−200

−150

−100

−50µA

IB=0

−5−3 −4−2−1

V)

Ta=25˚C

mA)

Rev.A 2/3