Transistors
Low-frequency transistor
UML1N
zFeatures
1) The 2SA1037AK and a diode are housed independently
in a UMT package.
zEquivalent circuit
(2)(3) (1)
Tr
Di
(5)(4)
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
FML10
SMT5
L10
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Tr
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipatio
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−60
−50
−6
−0.15
0.15
150
−55 to +150
Di
Parameter
DC reverse voltage
Peak reverse voltage
Mean rectifying current
Peak forward voltage
Surge current
Junction temperature
Storage temperature
Specified I/O frequencies
Symbol
V
R
V
RM
I
O
I
FM
Isurge
Tj
Tstg
f
Limits
80
80
0.1
0.3
4
150
−55 to +150
100
zExternal dimensions (Unit : mm)
UMT5
Unit
V
V
V
A
W
°C
°C
Unit
V
V
A
A
A
°C
°C
MHz
1pin mark
UML1N
2.0
1.3
0.65
0.65
(6)
(4)
(1)
(2)
(3)
0.2
0.9
0.7
2.1
1.25
0.15
0.1Min.
Each lead has same dimensions
Rev.A 1/3
Transistors
zElectrical characteristics (Ta=25°C)
Tr
Collector-emitter breakdown voltage BV
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Di
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
zElectrical characteristic curves
Tr
−50
−20
mA)
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic (
−0.2
−0.1
Fig.1 Grounded emitter propagation
500
FE
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Parameter Symbol Min. Typ. Max. Unit Conditions
Ta=100˚C
25˚C
−40˚C
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
VCE= −6V
V)
characteristics
Ta=25˚C
COLLECTOR CURRENT : IC (
VCE= −5V
−3V
−1V
mA)
Fig.4 DC current gain vs.
collector current (Ι)
−
CEO
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
V
I
R
C
trr
−50
CBO
−60
EBO
FE
T
F
T
−6
120
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.4
COLLECTOR TO MITTER VOLTAGE : VCE (
−
−
−
−0.1
−
−
−
−
−
−
−
−
−
−
−0.1
−
−0.5
−
−
140
4
−
−
−
−
−1.20
−0.8 −1.6 −2.0
−
−
560
−
5
1.2
0.1
3.5
4
Fig.2 Grounded emitter output
characteristics (Ι)
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
Ta=100˚C
25˚C
−40˚C
VCE= −6V
COLLECTOR CURRENT : IC (
Fig.5 DC current gain vs.
collector current (ΙΙ)
mA)
V
V
V
µA
µA
V
−
MHzpFV
V
µA
pF
ns
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
B
=0
I
I
C
= −1mA
I
C
= −50µA
I
E
= −50µA
V
CB
= −60V
V
EB
= −5V
I
C/IB
= −50mA/ −5mA
V
CE
= −6V, IC= −1mA
CE
= −12V, IE= 2mA, f= 100MHz
CB
= −12V, IE= 0A, f= 1MHz
V
I
F
=100mA
V
R
=70V
V
R
=6V, f=1MHz
V
R
=6V, IF=5mA, RL=50
−100
)
mA
(
−80
C
−60
−40
−20
COLLECTOR CURRENT : I
0
V)
COLLECTOR TO EMITTER VOLTAGE : VCE (
Ta=25˚C
−500
−450
−400
−350
−300
Ω
Fig.3 Grounded emitter output
characteristics (ΙΙ)
−1
V)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
IC/IB=
50
20
10
COLLECTOR CURRENT : IC (
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
UML1N
−250
−200
−150
−100
−50µA
IB=0
−5−3 −4−2−1
V)
Ta=25˚C
mA)
Rev.A 2/3
Transistors
−1
V)
(
CE(sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Di
50
20
mA)
(
10
F
5
2
1
0.5
FORWARD CURRENT : I
0.2
0.1
0
Fig.10 Forward characteristics
10
9
ns)
rr (
8
7
6
5
4
3
2
1
REVERSE RECOVERY TIME : t
0
0
Fig.13 Reverse recovery time
25˚C
−40˚C
COLLECTOR CURRENT : IC (
Ta=85ºC
50ºC
25ºC
0ºC
−30ºC
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : V
FORWARD CURRENT : I
F
lC/lB=10
mA)
F
V
R
=
N Type
(
mA)
1.6
1.4
(
V)
6V
10987654321
1000
500
MHz)
200
100
50
TRANSITION FREQUENCY : fT (
12 510
EMITTER CURRENT : I
Ta=25˚C
VCE= −12V
E (
mA)
Fig.8 Gain bandwidth product vs.
emitter current
1000
(nA)
100
R
10
1
0.1
REVERSE CURRENT : I
0.01
10 20 30 40 80706050
0
REVERSE VOLTAGE : V
Fig.11 Reverse characteristics
PULSE GENERATOR
OUTPUT 50Ω
INPUT
OUTPUT
R
I
50 1000.5 20
Ta=100°C
75°C
50°C
25°C
0°C
−25°C
R
(V)
0.01µF
100ns
20
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Cib
−1 −2 −5 −10
−0.5 −20
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
pF)
(
T
4
2
0
0
2 4 6 8 10 12 14 16
CAPACITANCE BETWEEN TERMINALS : C
REVERSE VOLTAGE : V
Fig.12 Capacitance between
terminals characteristics
D.U.T.
5Ω
t
rr
R
0.1I
SAMPLING
50Ω
OSCILLOSCOPE
0
Cob
N Type
UML1N
Ta=25˚C
f=1MHz
I
E
=
0A
I
C
=
0A
EB
(V)
f=1MHz
18 20
R
(V)
Fig.14 Reverse recovery time (trr) measurement circuit
Rev.A 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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