ROHM UMH8N, IMH8A Technical data

UMH8N / IMH8A

General purpose (dual digital transistors)

UMH8N / IMH8A

!!!!Transistors

zFeatures

1) Two DTC114T chips in a EMT or UMT or SMT
package.

zEquivalent circuit s

UMH8N

R

(1)(2)(3)

1

R

1

(4) (5) (6)

R

1

=10kΩ R1=10kΩ

IMH8A

R

1

R

1

(3) (2) (1)

(6)(5)(4)

zPackage, marking, andpackaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

UMH8N

UMT6

3000

H8
TR

IMH8A

SMT6

H8
T108
3000

zExternal dimensions (Unit : mm)

)

UMH8N

ROHM : UMT6
EIAJ : SC-88

IMH8A

ROHM : SMT6
EIAJ : SC-74

0.2

0.15

0.1Min.

0.3

0.15

0.3Min.

)

4

3

(

(

)

5

(

)(

6

(
)(

5
)

4

)

2

(

)

)

6

1

(

(

1.25

2.1

0~0.1

Each lead has same dimensions

)

1

(

0.95

)

2

(

0.95

)

3

(

1.6

2.8

0.8

0~0.1

Each lead has same dimensions

0.65

0.65

0.7

1.3

2.0

0.9

2.9

1.9

1.1

zAbsolute maximum ratings (Ta=25qC)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

Parameter Symbol

UMH8N

IMH8A

V
V
V

Tstg

CBO
CEO
EBO

I

C

Pd

Tj

zElectrical characteristics (Ta=25qC)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

∗Transition frequency of the device.

150(TOTAL)
300(TOTAL)

−55

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

R

1

Limits

50
50

5

100

150

to

Unit

V
V
V

mA

∗1

mW

∗2

°C

+150

°C

50
50

100

−

−

5

−

−

−

−

−

−

−

250
250

−

71013

0.5

0.5

0.3

600

Unit

V

−

−

−

−

V
V

μA
μA

V

−

MHz

C

=50μA

I

C

=1mA

I
I

E

=50μA

V

CB

V

EB

I

C/IB

CE

V
V

CE

kΩ

Conditions

=50V
=4V

=10mA/1mA
=5V, IC=1mA
=10V, IE= −5mA, f=100MHz

−

∗

Rev.A 1/2

zElectrical characteristics curves

1k

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Ta=100°C

Fig.1 DC current gain vs. collector

current

25

−40°C

V

CE

=

5V

°C

C

(A)

1

(V)

500m

CE(sat)

200m

Ta

100m

50m

20m
10m

5m

2m
1m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

=100°C

25°C

−40°C

lC/lB=10

C

(A)

Fig.2 Collector-emitter saturation

voltage vs. collector current

UMH8N / IMH8A

!!!!Transistors

Rev.A 2/2