ROHM EMH6, UMH6N, IMH6A Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
EMH6 / UMH6N / IMH6A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
2) Two DTC144E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
l
Inner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
l
Application
Inverter circuit, Interface circuit, Driver circuit
l
Packaging specifications
R
1
47kW
R
2
47kW
Parameter
Tr1 and Tr2
V
CC
50V
I
C(MAX.)
100mA
Part No.
Package
Package
size
(mm)
Taping
code
8,000H68
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMH6
EMT6
1616
T2R
180
3,000
H6
IMH6A
3,000
H6
UMH6N
UMT6
2021
TR
180
8
SMT6
2928
T108
180
8
EMT6
UMT6
SMT6
EMH6
(SC-107C)
IMH6A
SOT-457 (SC-74)
UMH6N
SOT-353 (SC-88)
EMH6 / UMH6N
IMH6A
OUT
(6)
(2)
GND
(1)
GND
(3)
IN
IN
(5)
OUT
(4)
IN
(4)
(2)
IN
(3)
OUT
(1)
OUT
GND
(5)
GND
(6)
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/7
2012.06 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH6 / UMH6N / IMH6A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter
Symbol
Values
Unit
V
CC
50
V
V
IN
-10 to +40
V
I
O
30
mA
I
C(MAX.)
*1
100
mA
EMH6 / UMH6N
P
D
*2
150 (Total)
*3
mW
IMH6A
300 (Total)
*4
mW
T
j
150
°C
T
stg
-55 to +150
°C
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input voltage
V
I(off)
V
CC
= 5V, IO = 100mA
-
-
V
V
I(on)
VO = 0.3V, IO = 2mA
3.0--
0.5
V
Input current
I
I
VI = 5V
--0.18
mA
Output voltage
V
O(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
mA
DC current gain
G
I
VO = 5V, IO = 5mA
68--
-
Output current
I
O(off)
V
CC
= 50V, VI = 0V
--0.5
kW
Resistance ratio
R2/R
1
-
0.811.2
-
Input resistance
R
1
-
32.9
47
61.1
MHz
Transition frequency
fT
*1
V
CE
= 10V, IE = -5mA,
f = 100MHz
-
250
-
2/7
2012.06 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH6 / UMH6N / IMH6A
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : IO [A]
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : IO [A]
0
10
20
30
0 5 10
0A
70μA
80μA
100μA
110μA
120μA
90μA
II=
Ta=25ºC
60μA
30μA
40μA
50μA
3/7
2012.06 - Rev.B
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