ROHM UMH5N, IMH5A Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
UMH5N / IMH5A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
l
Inner circuit
1) Built-In Biasing Resistors, R1 = R2 = 22kW.
2) Two DTC124E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
l
Application
Inverter circuit, Interface circuit, Driver circuit
l
Packaging specifications
UMT6
SMT6
SMT6
2928
T108
180
8
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
3,000
H5
IMH5A
3,000
H5
UMH5N
UMT6
2021
TR
180
8
Part No.
Package
Package
size
(mm)
Taping
code
Parameter
Tr1 and Tr2
V
CC
50V
I
C(MAX.)
100mA
R
1
22kW
R
2
22kW
IMH9A
SOT-457 (SC-74)
UMH9N
SOT-353 (SC-88)
UMH5N
IMH5A
OUT
(6)
(2)
GND
(1)
GND
(3)
IN
IN
(5)
OUT
(4)
GND
(4)
(2)
IN
(3)
OUT
(1)
OUT
IN
(5)
GND
(6)
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
1/6
2012.06 - Rev.D
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMH5N / IMH5A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
MHz
Transition frequency
fT
*1
V
CE
= 10V, IE = -5mA,
f = 100MHz
-
250
-
kW
Resistance ratio
R2/R
1
-
0.811.2
-
Input resistance
R
1
-
15.4
22
28.6
mA
DC current gain
G
I
VO = 5V, IO = 5mA
56--
-
Output current
I
O(off)
V
CC
= 50V, VI = 0V
--0.5
V
Input current
I
I
VI = 5V
--0.36
mA
Output voltage
V
O(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
V
I(on)
VO = 0.2V, IO = 5mA
3.0--
0.5
Input voltage
V
I(off)
V
CC
= 5V, IO = 100mA
-
-
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
T
j
150
°C
T
stg
-55 to +150
°C
I
C(MAX.)
*1
100
mA
UMH5N
P
D
*2
150 (Total)
*3
mW
IMH5A
300 (Total)
*4
mW
V
IN
-10 to +40
V
I
O
30
mA
Parameter
Symbol
Values
Unit
V
CC
50
V
2/6
2012.06 - Rev.D
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMH5N / IMH5A
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : IO [A]
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : IO [A]
0
10
20
30
0 5 10
0A
70μA
80μA
100μA
110μA
120μA
130μA
90μA
II=
Ta=25ºC
60μA
50μA
140μA
150μA
3/6
2012.06 - Rev.D
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