ROHM EMH2, UMH2N, IMH2A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMH2 / UMH2N / IMH2A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 47kW.

2) Two DTC144E chips in one package.

3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

l

Inner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for
operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

R

1

47kW

R

2

47kW

Parameter

Tr1 and Tr2

V

CC

50V

I

C(MAX.)

100mA

Part No.

Package

Package

size

(mm)

Taping

code

8,000H28

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMH2

EMT6

1616

T2R

180

3,000

H2

IMH2A

3,000

H2

UMH2N

UMT6

2021

TR

180

8

SMT6

2928

T108

180

8

EMT6

UMT6

SMT6

EMH2

(SC-107C)

IMH2A

SOT-457 (SC-74)

UMH2N

SOT-353 (SC-88)

OUT

(6)

(2)
IN

(1)

GND

(3)

OUT

IN
(5)

GND

(4)

OUT

(4)

(2)

IN

(3)

GND

(1)

OUT

IN

(5)

GND

(6)

EMH2 / UMH2N

IMH2A

(6)
(5)

(4)
(1)
(2)
(3)

(4)
(5)

(6)

(3)
(2)

(1)

(6)
(5)
(4)

(1)
(2)
(3)

1/7

2012.06 - Rev.C

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMH2 / UMH2N / IMH2A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage
Input voltage
Output current
Collector current

Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Parameter

Symbol

Values

Unit

V

CC

50

V

V

IN

-10 to +40

V

I

O

30

mA

I

C(MAX.)

*1

100

mA

EMH2 / UMH2N

P

D

*2

150 (Total)

*3

mW

IMH2A

300 (Total)

*4

mW

T

j

150

°C

T

stg

-55 to +150

°C

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

Input voltage

V

I(off)

V

CC

= 5V, IO = 100mA

-

-

V
V

I(on)

VO = 0.3V, IO = 2mA

3.0--

0.5

V

Input current

I

I

VI = 5V

--0.18

mA

Output voltage

V

O(on)

IO / II = 10mA / 0.5mA

-

0.1

0.3

mA

DC current gain

G

I

VO = 5V, IO = 5mA

68--

-

Output current

I

O(off)

V

CC

= 50V, VI = 0V

--0.5

kW

Resistance ratio

R2/R

1

-

0.811.2

-

Input resistance

R

1

-

32.9

47

61.1

MHz

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-

250

-

2/7

2012.06 - Rev.C

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMH2 / UMH2N / IMH2A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

10

20

30

0 5 10

0A

70μA

80μA

100μA

110μA

120μA

90μA

II=

Ta=25ºC

60μA

30μA

40μA

50μA

3/7

2012.06 - Rev.C