ROHM UMH14N, IMH14A Technical data

UMH14N / IMH14A

Transistors

General purpose (dual digital transistors)

UMH14N / IMH14A

zFeatures

1) Two DTC144T chips in a UMT or SMT package.

zEquivalent circuit

UMH14N

(3)

(2) (1)

R

1

(4) (5) (6)

R

1

IMH14A

(4)

(5) (6)

R

1

(3) (2) (1)

R

1

zPackage, marking, and packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

UMH14N

UMT6

H14

TR

3000

IMH14A

SMT6

H14
T108
3000

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage

Parameter Symbol

Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power dissipation
Junction temperature

Storage temperature

UMH14N

IMH14A

CBO

V
VCEO
VEBO

IC

Pc

Tj

Tstg

Limits

50
50

5

100
150(TOTAL)
300(TOTAL)

150

−55

to

+150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio

Transition frequency

Input resistance

∗Transition frequency of the device.

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

R

1

Unit

V
V
V

mA

mW

°C
°C

50
50

100

32.9 47 61.1

zExternal dimensions (Unit : mm)

UMH14N

0.2

0.1Min.

ROHM : UMT6
EIAJ : SC-88

IMH14A

0.3Min.

ROHM : SMT6
EIAJ : SC-74

Unit

V

0.5

0.5

0.3

600

−

V

−

V

−

µA
µA

V

−

MHz

−

kΩ

−

−

5

−

−

−

−

−

−

−

250
250

−

)

)

4

3

(

(

)

5

(

)

)

6

1

(

(

1.25

2.1

0.15

0~0.1

Each lead has same dimensions

)(

)

6

1

(

0.3

0.15

(

)(

)

5

2

(

)

)

4

3

(

1.6

2.8

0~0.1

Each lead has same dimensions

I

C

=50µA
IC=1mA
I

E

=50µA
V

CB

=50V

EB

=4V

V
IC/IB=10mA/1mA
VCE/IC=5V/1mA
V

CE

=10V, IE= −5mA, f=100MHz

0.65

)

2

(

1.3

0.65

0.9

0.7

0.95

1.9

0.95

1.1

0.8

Conditions

−

2.0

2.9

∗

Rev.A 1/2

Transistors

zElectrical characteristics curves

1k

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Ta=100°C

Fig.1 DC current gain vs. collector

current

25°C

−40°C

C

V

(A)

CE

=

5V

1

(V)

500m

CE(sat)

200m
100m

50m

20m
10m

5m

2m
1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation

voltage vs. collector current

25°C

−40°C

lC/lB=10

C

(A)

UMH14N / IMH14A

Rev.A 2/2