ROHM EMH11, IMH11A, UMH11N Schematic [ru]

EMH11 / UMH11N / IMH11A

Transistors

General purpose (dual digital transistors)

EMH1 1 / UMH11N / IMH11A

zFeatures

1) T wo DTC114E chips in a EMT or UMT or SMT
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor element s are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)

The following characteristics apply to both DTr

1 and DTr2.

zEquivalent circuit

EMH11 / UMH11N IMH11A

DTr

2

(3) (2) (1)

1

R

R

2

DTr

R

2

R

1

(4) (5) (6)
R1=10kΩ

2

=10kΩ

R

(4) (5) (6)

1

R

R

2

1

DTr

2

R

2

R

(3) (2) (1)

1

=10kΩ

R

2

=10kΩ

R

DTr

1

1

zPackaging specifications

Package Taping

TN

T110

3000

3000

−

−−

−−

Type
EMH11
UMH11N

IMH11A

Code
Basic ordering

unit (pieces)

T2R

8000

−

zExternal dimensions (Unit : mm)

EMH11

(3)

(4)

0.5

(2)(5)

0.22

0.13

0.5

(1)

(6)

1.2

1.6

Each lead has same dimensions

Abbreviated symbol : H11

ROHM : EMT6

UMH11N

ROHM : UMT6
EIAJ : SC-88

0.2

0.15

0.1Min.

Abbreviated symbol : H11

)

)

3

4

(

(

)

)

2

5

(

(

)

)

6

1

(

(

1.25

2.1

0to0.1

Each lead has same dimensions

IMH11A

)

)

6

1

(

(
)

)

2

5

(

(

)

)

4

3

(

(

1.6

2.8

0to0.1

Each lead has same dimensions

ROHM : SMT6
EIAJ : SC-74

0.3

0.15

0.3to0.6

Abbreviated symbol : H11

1.0

1.6

0.5

0.65

1.3

2.0

0.65

0.9

0.7

0.95

2.9

1.9

0.95

1.1

0.8

Rev.A 1/3

EMH11 / UMH11N / IMH11A

Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage

Input voltage

Output current
Collector current

Power
dissipation

EMH11,UMH11N 150 (TOTAL)
IMH11A 300 (TOTAL)

IC (Max.)

Junction temperature

Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

V

R2/R

V
V

I

O (off)

R

I (off)

I (on)

O (on)

I

I

G

f

T

1

I

1

Min.

−

3

−

−

−

30

− 250 −

7

0.8

zElectrical characteristic curves

100

50

20

(V)

I (on)

10

5

2

1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=−40°C

25°C

100°C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current
(ON characteristics)

O

(A)

VO=0.3V

V

CC

V

IN

O

I

Pd

Tj

Tstg −55 to +150 °C

Typ. Max. Unit Conditions

(A)

OUTPUT CURRENT : Io

Fig.2 Output current vs. input voltage
(OFF characteristics)

Limits

Unit
50 V
40

−10

V

50 mA

100

150

mA

mW

°C

1

∗

2

∗

10

−

0.5

−

−

0.30.1

−

0.88

−

0.5

−

−

MHz

13

1

1.2

CC

=5V, IO=100µA

V

V

O

=0.3V, IO=10mA

V
I

O/II

V

mA

µA

−

kΩ

=10mA/0.5mA

I

=5V

V

CC

=50V, VI=0V

V

O

=5V, IO=5mA

V

CE

=10V, IE=−5mA, f=100MHz

V

−

∗

−−

10m

5m

2m

Ta=100°C

1m

25°C

500µ

−40°C

200µ
100µ

50µ
20µ

10µ

5µ
2µ

1µ

03

0.5 1 1.5 2 2.5

INPUT VOLTAGE : V

I (off)

VCC=5V

(V)

1k

500

I

200

100

50

20

10

5

DC CURRENT GAIN : G

2
1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=100°C

−40°C

OUTPUT CURRENT : I

Fig.3 DC current gain vs. output
current

25°C

VO=5V

O

(A)

Rev.A 2/3