UMF9N
Transistors
Power management (dual transistors)
UMF9N
2SC5585 and 2SK3019 are housed independently in a UMT package.
zApplication
Power management circ uit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zEquivalent circuit s
(1)(2)(3)
Tr2
(4) (5) (6)
Tr1
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMF9N
UMT6
F9
TR
3000
zDimensions (Units : mm)
)
4
(
)
5
(
0.2
)
6
(
1.25
2.1
0.15
ROHM : UMT6
EIAJ : SC-88
0.1Min.
0.1
~
0
Each lead has same dimensions
)
3
(
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
)
1
(
Rev.A 1/5
UMF9N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
C
Limits
15
12
6
500
1.0
150(TOTAL)
150
to
+150
−55
Limits
30
±20
100
Unit
V
V
V
mA
A
mW
°C
°C
Unit
V
V
mA
200 mA
100 mA
D
200
150(TOTAL)
150
to
+150
−55
CEO
BV
CBO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
f
T
mA
mW
°C
°C
12
15
6
−−
−−
− 100
270 − 680
−
Cob − 7.5 −
Symbol
I
GSS
(BR)DSS
V
DSS
I
V
GS(th)
DS(on)
R
|Y
fs
iss
C
C
oss
rss
C
t
d(on)
r
t
t
d(off)
f
t
Min. Typ. Max. Unit Conditions
−−
30
−−
0.8
−
−
|
20
−
−
−
−
−
−
−
∗1
∗2
∗1
∗1
∗2
nA VCB=15V
nA VEB=6V
MHz
−
pF
pF
−
− pF
− pF
− ns
−
− ns
− ns
V
V
V
− V
V
VV
ns
−−
−−
−−
100
100
250 mV
320
±1 µA
−−
1.0 µA
1.5
−
58Ω
713Ω
−−ms V
13
9
4
15
35
80
80
C
=1mA
I
C
=10µA
I
E
=10µA
I
IC=200mA, IB=10mA
CE
=2V, IC=10mA
VCE=2V, IE=−10mA, f=100MHz
CB
=10V, IE=0mA, f=1MHz
V
VGS=±20V, VDS=0V
D
=10µA, VGS=0V
I
VDS=30V, VGS=0V
DS
=3V, ID=100µA
ID=10mA, VGS=4V
D
=1mA, VGS=2.5V
I
DS
=3V, ID=10mA
DS
=5V, VGS=0V, f=1MHz
V
D
=10mA, VDD 5V,
I
GS
=5V, RL=500Ω,
V
GS
=10Ω
R
Rev.A 2/5
Parameter Symbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
Tr2
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Symbol
DSS
V
V
GSS
I
D
DP
I
I
DR
I
DRP
P
Tch
Tstg
zElectrical characteristics (T a=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
UMF9N
Transistors
zElectrical characteristic curves
Tr1
1000
VCE=2V
Pulsed
(mA)
C
100
10
COLLECTOR CURRENT : I
1
0
Ta=125°C
Ta=25°C
Ta= −40°C
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
1000
IC/IB=20
(mV)
Pulsed
CE (sat)
100
Ta=125
°C
25
°C
−40
10
°C
1000
FE
100
10
DC CURRENT GAIN : h
1
1.41.0 1.20.4 0.6 0.80.2
BE
(V)
1 10 100 1000
Ta=125°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
C
VCE=2V
Pulsed
(mA)
Fig.2 DC current gain vs.
collector current
10000
(mV)
BE (sat)
1000
100
Ta=25°C
Ta=125°C
Ta=−40°C
IC/IB=20
Pulsed
1000
Ta=25°C
(mV)
Pulsed
CE(sat)
100
IC/IB=50
10
IC/IB=20
IC/IB=10
1
1 10 100 1000
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
VCE=2V
Ta=25°C
Pulsed
(MHz)
T
100
10
1
1 10 100 1000
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
100
Cib
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance
Cob
1 10 1000.1
EMITTER TO BASE VOLTAGE : V
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
I
E
=
0A
f=1MHz
Ta=25°C
EB
(
10
1 10 100 1000
BASER SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.5 Base-emitter saturation voltage
vs. collector current
10
V)
Ta=25°C
Single Pulsed
(A)
C
1
0.1
0.01
TRANSITION FREQUENCY : I
0.001
0.01 0.1 1 10 100
DC
EMITTER CURRENT : V
Fig.8 Safe operation area
100ms
10ms
C
(mA)
1ms
CE
TRANSITION FREQUENCY : f
1
1 10 100 1000
E
EMITTER CURRENT : I
(mA)
Fig.6 Gain bandwidth product
vs. emitter current
(V)
Rev.A 3/5
UMF9N
Transistors
Tr2
200m
V
DS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
75°C
25°C
−25°C
2
3
2
(V)
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 150
−50 0
CHANNEL TEMPERATURE : Tch (°C)
V
DS
=3V
I
D
=0.1mA
Pulsed
50
(Ω)
20
DS(on)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
V
GS
=4V
Pulsed
Fig.9 Typical transfer characteristics
50
Ta=125°C
(Ω)
20
DS(on)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.12 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
0.0001
25°C
75°C
125°C
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)
V
GS
=2.5V
Pulsed
V
DS
=3V
Pulsed
0.1 0.2 0.5
Fig.10 Gate threshold voltage vs.
channel temperature
15
(Ω)
DS(on)
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
ID=0.05A
Fig.13 Static drain-source on-state
resistance vs. gate-source
voltage
200m
(A)
100m
DR
50m
20m
10m
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=125°C
75°C
25°C
−25°C
Ta=25°C
Pulsed
V
GS
=0V
Pulsed
Fig.11 Static drain-source on-state
resistance vs. drain current ( Ι )
9
8
(Ω)
7
DS(on)
6
5
4
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
−50 0 25 150
ID=100mA
−25 50 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
Fig.14 Static drain-source on-state
resistance vs. channel
temperature
200m
(A)
100m
DR
50m
20m
10m
V
GS
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
1.510.50
SOURCE-DRAIN VOLTAGE : VSD (V)
=4V
0V
ID=50mA
VGS=4V
Pulsed
Ta=25°C
Pulsed
1.510.50
Fig.15 Forward transfer admittance vs.
drain current
Fig.16 Reverse drain current vs.
source-drain voltage ( Ι )
Fig.17 Reverse drain current vs.
source-drain voltage ( ΙΙ )
Rev.A 4/5
UMF9N
Transistors
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
Z
SWITHING TIME : t (ns)
1000
500
200
100
50
20
10
5
2
0.1
t
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
Ta=25°C
DD
=5V
V
GS
=5V
V
G
=10Ω
R
Pulsed
100
Fig.18 Typical capacitance vs.
drain-source voltage
Fig.19 Switching characteristics
Rev.A 5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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