ROHM UMF9N Technical data

UMF9N

Transistors

Power management (dual transistors)

UMF9N

2SC5585 and 2SK3019 are housed independently in a UMT package.

zApplication

Power management circ uit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit s

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

zPackaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

UMF9N

UMT6

F9
TR

3000

zDimensions (Units : mm)

)

4

(

)

5

(

0.2

)

6

(

1.25

2.1

0.15

ROHM : UMT6
EIAJ : SC-88

0.1Min.

0.1

~

0

Each lead has same dimensions

)

3

(

0.65

)

2

(

1.3

0.65

0.7

2.0

0.9

)

1

(

Rev.A 1/5

UMF9N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

C

Limits

15
12

6

500

1.0

150(TOTAL)

150

to

+150

−55

Limits

30
±20
100

Unit

V
V
V

mA

A

mW

°C
°C

Unit

V
V

mA
200 mA
100 mA

D

200

150(TOTAL)

150

to

+150

−55

CEO

BV

CBO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

mA

mW

°C
°C

12
15

6

−−

−−

− 100

270 − 680

−

Cob − 7.5 −

Symbol

I

GSS

(BR)DSS

V

DSS

I

V

GS(th)

DS(on)

R

|Y

fs

iss

C

C

oss
rss

C

t

d(on)

r

t

t

d(off)

f

t

Min. Typ. Max. Unit Conditions

−−

30

−−

0.8

−

−

|

20

−

−

−

−

−

−

−

∗1
∗2

∗1

∗1
∗2

nA VCB=15V
nA VEB=6V

MHz

−

pF

pF

−

− pF

− pF

− ns

−

− ns

− ns

V
V
V

− V

V

VV

ns

−−

−−

−−

100
100
250 mV

320

±1 µA

−−

1.0 µA

1.5

−

58Ω
713Ω

−−ms V

13

9

4
15
35
80
80

C

=1mA

I

C

=10µA

I

E

=10µA

I

IC=200mA, IB=10mA

CE

=2V, IC=10mA

VCE=2V, IE=−10mA, f=100MHz

CB

=10V, IE=0mA, f=1MHz

V

VGS=±20V, VDS=0V

D

=10µA, VGS=0V

I
VDS=30V, VGS=0V

DS

=3V, ID=100µA

ID=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

DS

=3V, ID=10mA

DS

=5V, VGS=0V, f=1MHz

V

D

=10mA, VDD 5V,

I

GS

=5V, RL=500Ω,

V

GS

=10Ω

R

Rev.A 2/5

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

Tr2

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed

Total power dissipation
Channel temperature
Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

DP

I
I

DR

I

DRP

P

Tch

Tstg

zElectrical characteristics (T a=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time