ROHM UMF8N Schematic [ru]
UMF8N
Transistors
Power management (dual transistors)
UMF8N
2SC5585 and DTC144EE are housed independently in a UMT package.
zApplication
Power management circ uit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zEquivalent circuit s
(1)(2)(3)
zDimensions (Units : mm)
)
4
(
)
5
(
0.2
)
6
(
1.25
2.1
0.15
ROHM : UMT6
EIAJ : SC-88
0.1Min.
0.1
~
0
Each lead has same dimensions
)
3
(
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
)
1
(
DTr2 Tr1
R
1
R
2
(4) (5) (6)
R1=47kΩ
R2=47kΩ
zPackage, marking, and p ackaging specifications
Type UMF8N
Package
Marking
Code
Basic ordering unit (pieces)
UMT6
F8
TR
3000
Rev.A 1/4
UMF8N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
CC
V
V
IN
I
C
I
O
P
C
Tj
Tstg
zElectrical characteristics (T a=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
DTr2
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics of built-in transistor.
Limits
15
12
6
500
1.0
150(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
Limits
50
−10 to +40
100
30
150(TOTAL)
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
CEO
BV
CBO
BV
EBO
BV
I
CBO
EBO
I
V
CE(sat)
FE
h
f
T
Cob − 7.5 −
V
I(off)
I(on)
V
O(on)
V
I
I
O(off)
I
I
G
T
f
R
1
R
2/R1
12
15
6
−−
−−
−−
−−
−−
− 100
270 − 680
320
−
−−0.5
3.0
−
−−
100 300
−−
−−
68 −−
250
−
32.9 47
0.8 1.0 1.2
100
100
nA VCB=15V
nA VEB=6V
250 mV
MHz
−
pF
mV
180
500
µAVI=5V
nA VCC=50V, VI=0V
MHz
−
61.1 kΩ
V
I
C
=1mA
V
I
C
=10µA
V
I
E
=10µA
IC=200mA, IB=10mA
− V
CE
=2V, IC=10mA
VCE=2V, IE=−10mA, f=100MHz
V
CB
=10V, IE=0mA, f=1MHz
V
VCC=5V, IO=100µA
V
V
O
=0.3V, IO=2mA
V
O
=10mA, II=0.5mA
− V
O
=5V, IO=5mA
VCE=10V, IE=5mA, f=100MHz
−
∗
−
−
Rev.A 2/4
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