ROHM UMF8N Schematic [ru]

UMF8N

Transistors

Power management (dual transistors)

UMF8N

2SC5585 and DTC144EE are housed independently in a UMT package.

zApplication

Power management circ uit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit s

(1)(2)(3)

zDimensions (Units : mm)

)

4

(

)

5

(

0.2

)

6

(

1.25

2.1

0.15

ROHM : UMT6
EIAJ : SC-88

0.1Min.

0.1

~

0

Each lead has same dimensions

)

3

(

0.65

)

2

(

1.3

0.65

0.7

2.0

0.9

)

1

(

DTr2 Tr1

R

1

R

2

(4) (5) (6)

R1=47kΩ
R2=47kΩ

zPackage, marking, and p ackaging specifications

Type UMF8N

Package

Marking

Code

Basic ordering unit (pieces)

UMT6

F8
TR

3000

Rev.A 1/4

UMF8N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

DTr2

Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature

∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

CC

V

V

IN

I

C

I

O

P

C

Tj

Tstg

zElectrical characteristics (T a=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

DTr2

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗Characteristics of built-in transistor.

Limits

15
12

6

500

1.0

150(TOTAL)

150

−55 to +150

Unit

V
V
V

mA

A

mW

°C
°C

∗1
∗2

Limits

50

−10 to +40
100

30

150(TOTAL)

150

−55 to +150

Unit

V

V
mA
mA

mW

°C
°C

∗1

∗2

CEO

BV

CBO

BV

EBO

BV

I

CBO
EBO

I

V

CE(sat)

FE

h

f

T

Cob − 7.5 −

V

I(off)
I(on)

V

O(on)

V

I

I

O(off)

I

I

G

T

f

R

1

R

2/R1

12
15

6

−−

−−

−−

−−

−−

− 100

270 − 680

320

−

−−0.5

3.0

−

−−

100 300

−−

−−

68 −−

250

−

32.9 47

0.8 1.0 1.2

100
100

nA VCB=15V
nA VEB=6V

250 mV

MHz

−

pF

mV
180
500

µAVI=5V
nA VCC=50V, VI=0V

MHz

−

61.1 kΩ

V

I

C

=1mA

V

I

C

=10µA

V

I

E

=10µA

IC=200mA, IB=10mA

− V

CE

=2V, IC=10mA
VCE=2V, IE=−10mA, f=100MHz
V

CB

=10V, IE=0mA, f=1MHz

V

VCC=5V, IO=100µA

V

V

O

=0.3V, IO=2mA

V

O

=10mA, II=0.5mA

− V

O

=5V, IO=5mA

VCE=10V, IE=5mA, f=100MHz

−

∗

−

−

Rev.A 2/4

UMF8N

Transistors

zElectrical characteristic curves

Tr1

1000

VCE=2V
Pulsed

(mA)

C

100

10

COLLECTOR CURRENT : I

1

0

Ta=125°C

Ta=25°C

Ta= −40°C

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation

characteristics

1000

IC/IB=20

(mV)

Pulsed

CE (sat)

100

Ta=125

°C

25

°C

−40

10

°C

1000

FE

100

10

DC CURRENT GAIN : h

1

1.41.0 1.20.4 0.6 0.80.2

BE

(V)

1 10 100 1000

Ta=125°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

C

(mA)

VCE=2V
Pulsed

Fig.2 DC current gain vs.

collector current

10000

(mV)

BE (sat)

1000

100

Ta=25°C

Ta=125°C

Ta=−40°C

IC/IB=20
Pulsed

1000

Ta=25°C

(mV)

Pulsed

CE(sat)

100

IC/IB=50

10

IC/IB=20

IC/IB=10

1

1 10 100 1000

C

COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

(mA)

Fig.3 Collector-emitter saturation voltage

vs. collector current ( Ι )

1000

VCE=2V
Ta=25°C
Pulsed

(MHz)

T

100

10

TRANSITION FREQUENCY : f

1

1 10 100 1000

C

COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

(mA)

Fig.4 Collector-emitter saturation voltage

vs. collector current ( ΙΙ )

10

1 10 100 1000

BASER SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

C

(mA)

Fig.5 Base-emitter saturation voltage

vs. collector current

1

1 10 100 1000

E

EMITTER CURRENT : I

(mA)

Fig.6 Gain bandwidth product

vs. emitter current

1000

100

Cib

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

Cob

1 10 1000.1

vs. collector-base voltage

Emitter input capacitance
vs. emitter-base voltage

I

E

=

0A

f=1MHz
Ta=25°C

CB

(

10

Ta=25°C
Single Pulsed

(A)

C

1

0.1

0.01

TRANSITION FREQUENCY : I

0.001

0.01 0.1 1 10 100

V)

Fig.8 Safe operation area

10ms

100ms

DC

EMITTER CURRENT : V

1ms

CE

(V)

Rev.A 3/4

UMF8N

Transistors

DTr2

100

50

20

(V)

I(on)

10

Ta=−40°C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

25°C

100°C

OUTPUT CURRENT : I

O

(A)

VO=0.3V

Fig.9 Input voltage vs. output current

(ON characteristics)

1

500m

(V)

O(on)

OUTPUT VOLTAGE : V

Ta=100°C

200m
100m

50m

20m
10m

5m

2m
1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

25°C

−40°C

OUTPUT CURRENT : I

Fig.12 Output voltage vs. output

current

O

lO/lI=20

(A)

10m

VCC=5V

5m

Ta=100°C

2m

25°C

(A)

1m

−40°C

500µ
200µ

100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io

5µ
2µ

1µ

0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V

I(off)

Fig.10 Output current vs. input voltage

(OFF characteristics)

(V)

1k

500

Ta=100°C

I

200
100

50

20
10

DC CURRENT GAIN : G

25°C

−40°C

5

2
1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : I

Fig.11 DC current gain vs. output

current

VO=5V

O

(A)

Rev.A 4/4

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0