ROHM UMF6N Technical data

UMF6N

Transistors

Power management (dual transistors)

UMF6N

2SA2018 and 2SK3019 are housed independently in a UMT package.

zApplication

Power management circuit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuits

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

zPackaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

UMF6N

UMT6

F6
TR

3000

zDimensions (Units : mm)

(6) (5)(4)

(1) (2)(3)

ROHM : UMT6
EIAJ : SC-88

Each lead has same dimensions

Rev.B 1/5

UMF6N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

C

Limits

−15

−12

−6

−500

−1.0

150(TOTAL)

150

−55

to

+150

Limits

30
±20
100

Unit

V
V
V

mA

A

mW

°C
°C

Unit

V
V

mA
200 mA
100 mA

D

200

150(TOTAL)

150

to

+150

−55

CEO

BV

CBO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

mA

mW

°C
°C

−12

−15

−6

−−

−−

−−100

270 − 680

−

Cob − 6.5 −

Symbol

I

GSS

(BR)DSS

V

DSS

I

V

GS(th)

DS(on)

R

|Y

fs

iss

C

C

oss
rss

C

t

d(on)

r

t

t

d(off)

f

t

Min. Typ. Max. Unit Conditions

−−

30

−−

0.8

−

−

|

20

−

−

−

−

−

−

−

∗1
∗2

∗1

∗1
∗2

nA VCB=−15V
nA VEB=−6V

MHz

−

pF

±1 µA

pF

−

− pF

− pF

− ns

ns

−

− ns

− ns

V
V
V

− V

V

VV

−−

−−

−−

−100

−100

−250 mV

260

−−

1.0 µA

1.5

−

58Ω
713Ω

−−ms V

13

9

4
15
35
80
80

C

=−1mA

I

C

=−10µA

I

E

=−10µA

I

IC=−200mA, IB=−10mA

CE

=−2V, IC=−10mA

VCE=−2V, IE=10mA, f=100MHz

CB

=−10V, IE=0mA, f=1MHz

V

VGS=±20V, VDS=0V

D

=10µA, VGS=0V

I
VDS=30V, VGS=0V

DS

=3V, ID=100µA

ID=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

DS

=3V, ID=10mA

DS

=5V, VGS=0V, f=1MHz

V

D

=10mA, VDD 5V,

I

GS

=5V, RL=500Ω,

V

GS

=10Ω

R

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

Tr2

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed

Total power dissipation
Channel temperature
Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

DP

I
I

DR

I

DRP

P

Tch

Tstg

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Rev.B 2/5