ROHM UMF5N Schematic [ru]

UMF5N

Transistors

Power management (dual transistors)

UMF5N

2SA2018 and DTC144EE are housed independently in a UMT p ackage.

zApplication

Power management circ uit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit s

(1)(2)(3)

DTr2 Tr1

R

1

R

2

(4) (5) (6)

R1=47kΩ
R2=47kΩ

zPackaging specifications

Type UMF5N

Package

Marking

Code

Basic ordering unit (pieces)

UMT6

F5
TR

3000

zDimensions (Units : mm)

UMT6

Each lead has same dimensions

Rev.A 1/4

UMF5N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

DTr2

Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature

∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

CC

V

V

IN

I

C

I

O

P

C

Tj

Tstg

zElectrical characteristics (T a=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

DTr2

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗Characteristics of built-in transistor.

Limits

−15

−12

−6

−500

−1.0

150(TOTAL)

150

−55~+150

Unit

V
V
V

mA

A

mW

°C
°C

∗1
∗2

Limits

50

−10

to

+40

100

30

150(TOTAL)

150

−55

to

+150

Unit

V

V
mA
mA

mW

°C
°C

∗1

∗2

CEO

BV

CBO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

T

f

Cob − 6.5 −

V

I(off)
I(on)

V

O(on)

V

I

I

O(off)

I

I

G

T

f

R

1

R

2/R1

−12

−15

−6

−−

−−

−−

−−

−−

−−100

270 − 680

260

−

−−0.5

3.0

−

−−

100 300

−−

−−

68 −−

250

−

32.9 47

0.8 1.0 1.2

V
V
V

−100

−100

nA VCB=−15V
nA VEB=−6V

−250 mV

− V

MHz

−

pF

V
V

mV
180
500

µAVI=5V
nA VCC=50V, VI=0V

− V

MHz

−

61.1 kΩ

−

I

C

=−1mA

I

C

=−10µA

I

E

=−10µA

IC=−200mA, IB=−10mA

CE

=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
V

CB

=−10V, IE=0mA, f=1MHz

VCC=5V, IO=100µA
V

O

=0.3V, IO=2mA

V

O

=10mA, II=0.5mA

O

=5V, IO=5mA

VCE=10V, IE=−5mA, f=100MHz

−

−

∗

Rev.A 2/4