ROHM UMF32N Schematic [ru]

EMF32 / UMF32N

Transistors

Power management (dual transistors)

EMF32 / UMF32N

DTA143T and 2SK3019 are housed independently in a EMT6 package.

zApplica tion

Power management circuit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit s

zExternal dimensions (Unit : mm)

(3)

ROHM : EMT6

Abbreviated symbol : F32

0.22

0.13

(4)

(6)

0.5

1.0

(2)(5)

0.5

(1)

1.2

1.6

0.5

Each lead has
same dimensions

1.6

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

zPackaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMF32

EMT6

F32
T2R

8000

UMF32

UMT6

F32

TR

3000

)

)

3

4

(

)
5

(

0.2

0.15

0.1Min.

ROHM : UMT6

)
6

(

1.25

2.1

0.65

(

)
2

(

1.3

)
1

(

0.65

1pin mark

0.9

0.7

Each lead has

2.0

same dimensions

Abbreviated symbol : F32

1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature

∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Tr2

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed

Total power dissipation
Channel temperature
Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

DP

I
I

DR

I

DRP

P

D

Tch

Tstg

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency

∗ Transition frequency of the device

BV
BV
BV

V

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance

Input capacitance
Output capacitance
Reverce transfer capacitance

Turn-on delay time
Rise time
Turn-off delay time
Fall time

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

R

1

f

T

Symbol

I

GSS

(BR)DSS

V

DSS

I

V

GS(th)

DS(on)

R

|Y

iss

C

C

oss
rss

C

t

d(on)

r

t

t

d(off)

t

fs

f

Limits

−50

−50

−5

−100

150(TOTAL)

150

−55 to +150

Limits

30
±20
100
200 mA

Unit

V
V
V

mA

mW

°C
°C

Unit

V
V

mA

∗1

∗1

100 mA

∗1

200

150(TOTAL)

150

−55 to +150

Min.

−50

−50

−5

−

−

−

100

3.29

−

Min. Typ. Max. Unit Conditions

|

mA

∗2

mW

°C
°C

Typ. Max. Unit Conditions

−

−

VI

−

−

−

−

−

250

4.7

250

−−

30

−−

0.8

−

−

20

13

−

−

−

15

−

35

−

80

−

80

−

V

−

V

−

µA

−0.5
µA

−0.5

V

−0.3

−

600

kΩ

6.11 −

MHz

−

±1 µA

−−

1.0 µA

1.5

−

58Ω
713Ω

−−ms V

−

9

− pF

4

− pF

− ns

−

− ns

− ns

C

=

−50µA

I

C

=

−1mA

I

E

=

−50µA

V

CB

=

−50V

V

EB

=

−4V

C/IB

=

−5mA/ −0.25mA

I

C

=

−1mA, V

CE

I

V

CE

=

V

VV

pF

ns

=

−

10V, IE=5mA, f=100MHz

VGS=±20V, VDS=0V
ID=10µA, VGS=0V
VDS=30V, VGS=0V

DS

=3V, ID=100µA

ID=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

DS

=3V, ID=10mA

DS

=5V, VGS=0V, f=1MHz

V

D

=10mA, VDD 5V,

I

GS

=5V, RL=500Ω,

V

GS

=10Ω

R

EMF32 / UMF32N

−5V

∗

2/4