UMF28N
Transistors
Power management (dual transistors)
UMF28N
2SA1774 and DTC124XE are housed independently in a UMT package.
zApplication zExternal dimensions (Unit : mm)
Power management circuit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zEquivalent circuit
UMF28N
ROHM : UMT6
EIAJ : SC-88
)
)
3
4
(
(
)
5
(
0.2
0.15
0.1Min.
Abbreviated symbol : F28
)
2
(
)
)
6
1
(
(
1.25
2.1
0to0.1
Each lead has same dimensions
0.65
0.65
0.7
1.3
2.0
0.9
(1)(2)(3)
DTr2 Tr1
R
1
R
2
(4) (5) (6)
R1=22kΩ
R2=47kΩ
zPackaging specifications
Type UMF28N
Package
Marking
Code
Basic ordering unit (pieces)
UMT6
F28
TR
3000
1/4
UMF28N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter Symbol
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ 120mW per element must not be exceeded.
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
DTr2
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
CC
V
V
IN
I
O
I
C(Max.)
P
C
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
V
DTr2
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device.
Limits
−60
−50
−6
−150
150 (TOTAL)
150
−55 to +150
Limits
50
−10 to +40
100
100
150(TOTAL)
150
−55 to +150
Min.
CBO
−60
CEO
−50
EBO
I
CBO
I
EBO
CE(sat)
h
FE
180
f
T
Cob
V
I(off)
I(on)
V
O(on)
V
I
I
O(off)
I
G
I
R
1
2/R1
R
T
f
Unit
V
V
V
mA
∗
mW
°C
°C
Unit
V
V
mA
∗
mW
°C
°C
Typ. Max. Unit Conditions
C
−
−
−
−
−
−6
−
−
−
−
−
140
−
−
−0.1
−
−0.1
−
−0.5
−
390
MHz
−
4
5
−−0.4 VCC=5V, IO=100µA
2.5
−
−−
0.1 0.3
−−
−−
68 −−
15.4 22
1.7 2.1 2.6
250
−
= −50µA
VI
C
= −1mA
I
V
E
= −50µA
I
V
V
CB
µA
EB
V
µA
C/IB
V
I
V
CE
−
CE
V
V
CB
pF
0.36
0.5
28.6 kΩ
MHz
−
= −60V
= −6V
= −50mA/−5mA
= −6V, IC = −1mA
= −12V, IE = 2mA, f = 100MHz
= −12V, IE = 0A, f = 1MHz
V
VO=0.3V, IO=2mA
V
IO=10mA, II=0.5mA
mA VI=5V
µAVCC=50V, VI=0V
− VO=5V, IO=5mA
−
VCE=10V, IE= −5mA, f=100MHz
−
−
∗
2/4
UMF28N
Transistors
zElectrical characteristics curves
Tr1
-50
Ta = 100°C
25°C
-20
−
(mA)
COLLECTOR CURRENT : Ic
40°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
-0.2
BASE TO EMITTER VOLTAGE : V
VCE = −6V
BE
Fig.1 Grounded emitter propagation
characteristics
-10
-8
(mA)
C
-6
-4
-2
COLLECTOR CURRENT : I
(V)
COLLECTOR TO EMITTER VOLTAGE : V
Ta = 25°C
-0.4
-0.8 -1.6 -2.0
Fig.2 Grounded emitter output
characteristics ( Ι )
-35.0
-31.5
-28.0
-24.5
-21.0
-17.5
-14.0
-10.5
-7.0
-3.5µA
B
= 0
-1.20
I
CE
500
Ta = 25°C
FE
200
100
DC CURRENT GAIN : h
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : I
VCE = -5V
-3V
-1V
C
(mA)
Fig.4 DC current gain vs. collector
current ( Ι )
500
FE
200
100
50
DC CURRENT GAIN : h
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
Ta = 100°C
25°C
-40°C
COLLECTOR CURRENT : I
Fig.5 DC current gain vs. collector
current ( ΙΙ )
VCE = -6V
C
(mA)
-1
(V)
CE(sat)
-0.5
-0.2
Ta = 100°C
-0.1
-0.05
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR SATURATION VOLTAGE : V
25°C
-40°C
COLLECTOR CURRENT : I
lC/lB = 10
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
1000
(MHz)
500
T
200
100
TRANSITION FREQUENCY : f
50
12 510
EMITTER CURRENT : I
Ta = 25
CE
V
E
(mA)
= -
Fig.8 Gain bandwidth product vs.
emitter current
°C
12V
50 1000.5 20
3/4
-100
Ta = 25°C
-500
(mA)
-450
-80
-400
-350
-300
-60
-40
-20
COLLECTOR CURRENT : IC
0
(V)
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
-1
(V)
CE(sat)
-0.5
-0.2
-0.1
-0.05
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR SATURATION VOLTAGE : V
IC/I
B
= 50
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
20
pF)
pF)
10
5
2
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Collector output capacitance vs.
Fig.9
Cib
-0.5 -20
-1 -2 -5 -10
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
-250
-200
-150
-100
-50µA
IB = 0
-5-3 -4-2-1
CE
(V)
Ta = 25
f
=
1MHz
I
E = 0A
I
C = 0A
CB
EB
(V)
(V)
°C
Ta = 25°C
20
10
C
(mA)
Cob
UMF28N
Transistors
DTr2
100
50
20
(V)
I(on)
10
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=−40°C
25°C
100°C
OUTPUT CURRENT : I
O
(A)
VO=0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
O
lO/lI=20
(A)
10m
VCC=5V
5m
2m
(A)
1m
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0 3.0
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
Ta=100°C
25°C
−40°C
Fig.2 Output current vs. input voltage
(OFF characteristics)
I(off)
(V)
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
O (A)
VO=5V
4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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