ROHM UMF28N Technical data

UMF28N

Transistors

Power management (dual transistors)

UMF28N

2SA1774 and DTC124XE are housed independently in a UMT package.

zApplication zExternal dimensions (Unit : mm)
Power management circuit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure
Silicon epitaxial planar transistor

zEquivalent circuit

UMF28N

ROHM : UMT6
EIAJ : SC-88

)

)

3

4

(

(

)

5

(

0.2

0.15

0.1Min.

Abbreviated symbol : F28

)

2

(

)

)

6

1

(

(

1.25

2.1

0to0.1

Each lead has same dimensions

0.65

0.65

0.7

1.3

2.0

0.9

(1)(2)(3)

DTr2 Tr1

R

1

R

2

(4) (5) (6)

R1=22kΩ
R2=47kΩ

zPackaging specifications

Type UMF28N

Package

Marking

Code

Basic ordering unit (pieces)

UMT6

F28

TR

3000

1/4

UMF28N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Parameter Symbol

V

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗ 120mW per element must not be exceeded.

CBO

V

CEO

V

EBO

I

P

Tj

Tstg

C

C

DTr2

Parameter
Supply voltage
Input voltage

Output current
Power dissipation

Junction temperature
Range of storage temperature

∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.

Symbol

CC

V

V

IN

I

O

I

C(Max.)

P

C

Tj

Tstg

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

BV
BV
BV

V

DTr2

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage

Input current
Output current
DC current gain

Input resistance
Resistance ratio
Transition frequency

∗ Transition frequency of the device.

Limits

−60

−50

−6

−150

150 (TOTAL)

150

−55 to +150

Limits

50

−10 to +40
100
100

150(TOTAL)

150

−55 to +150

Min.

CBO

−60

CEO

−50

EBO

I

CBO

I

EBO

CE(sat)

h

FE

180

f

T

Cob

V

I(off)
I(on)

V

O(on)

V

I

I

O(off)

I

G

I

R

1

2/R1

R

T

f

Unit

V
V
V

mA

∗

mW

°C
°C

Unit

V
V

mA

∗

mW

°C
°C

Typ. Max. Unit Conditions

C

−

−

−

−

−

−6

−

−

−

−

−

140

−

−

−0.1

−

−0.1

−

−0.5

−

390

MHz

−

4

5

−−0.4 VCC=5V, IO=100µA

2.5

−

−−

0.1 0.3

−−

−−

68 −−

15.4 22

1.7 2.1 2.6
250

−

= −50µA

VI

C

= −1mA

I

V

E

= −50µA

I

V

V

CB

µA

EB

V

µA

C/IB

V

I
V

CE

−

CE

V
V

CB

pF

0.36

0.5

28.6 kΩ

MHz

−

= −60V
= −6V

= −50mA/−5mA
= −6V, IC = −1mA
= −12V, IE = 2mA, f = 100MHz
= −12V, IE = 0A, f = 1MHz

V

VO=0.3V, IO=2mA

V

IO=10mA, II=0.5mA

mA VI=5V

µAVCC=50V, VI=0V

− VO=5V, IO=5mA

−

VCE=10V, IE= −5mA, f=100MHz

−

−
∗

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