ROHM EMD5, UMD5N Technical data

EMD5 / UMD5N

Transistors

General purpose
(dual digital transistors)

EMD5 / UMD5N

zFeatures

1) Both the DTA143X chip and DTC144E chip in an
EMT6 or UMT6 package.

2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.

3) Transistor elements are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

A PNP and NPN digit al transistor
(each with a single built in resistor)

The following characteristics apply to both the DTr

2, however, the “ −” sign on DTr2 values for the PNP

DTr

1 and

type have been omitted.

zEquivalent circuit

EMD5 / UMD5N

(3) (2) (1)

R

1

R

2

DTr

1

2

R

1

DTr

1

R1/R2=47kΩ / 47kΩ
DTr

2

R1/R2=4.7kΩ / 10kΩ

DTr

2

R

(4) (5) (6)

zPackaging specifications

Package

Taping

zExternal dimensions (Unit : mm)

EMD5

(3)

ROHM : EMT6

(4)

0.22

(6)

0.13

Abbreviated symbol : D5

0.5

1.0

1.6

(2)(5)

0.5

(1)

1.2

1.6

0.5

Each lead has same dimensions

UMD5N

)

)

3

ROHM : UMT6
EIAJ : SC-88

4

(

)

5

(

0.2
)

6

(

1.25

2.1

0.15

0.1Min.

0∼0.1

Abbreviated symbol :D5

0.65

(

)

2

(

)

1

(

0.65

0.7

Each lead has same dimensions

1.3

2.0

0.9

Type

Code TR
Basic ordering

unit (pieces)

T2R

8000

3000

EMD5
UMD5N

Rev.A 1/4

EMD5 / UMD5N

Transistors

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation

Junction temperature
Storage temperature

V

I

C(Max.)

Tstg

V

Pd

CC

IN

I

O

Tj

DTr1(DTC144E)

−10 to +40

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Transition frequency of the device

V
V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

I

f

Min.

−

3

−

I

−

−

68

I

32.9

1

1

0.8

T

−

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Transition frequency of the device

V
V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

I

f

Min.

−

−2.5

−

−

I

−

30

I

3.29

1

1.7

1

−

T

Limits

DTr2(DTC143X)

50

−50

−20 to +7

30

100

−100

−100

120(1ELEMENT)150(TOTAL)

150

−55 to +150

Typ. Max. Unit Conditions

V

CC

V

V

mA

µA

−

=5V, IO=100µA

O

=0.3V, IO=2mA

V
I

O/II

=10mA/0.5mA

V

I

=5V

V

CC

=50V, VI=0V

VO=5V, IO=5mA

kΩ

−−

CE

=10V, IE=−5mA, f=100MHz

V

MHz

0.1

47

250

0.5

−

−

−

0.3

0.18

−

0.5

−

−

−

61.1

1.2

1

−

Typ. Max. Unit Conditions

−

−

−0.1

−

−

−

4.7

2.1

250

−0.3

−

−0.3

−1.8

−0.5

−

6.11

2.6

−

V

CC

V

V

mA

µA

−

=−5V, IO=−100µA

V

O

=−0.3V, IO=−20mA

I

O/II

=−10mA/−0.5mA

V

I

=−5V

V

CC

=−50V, VI=0V

V

O

=−5V, IO=−10mA

kΩ

−−

CE

=−10V, IE=5mA, f=100MHz

V

MHz

Unit

V
V

mA

mW

°C
°C

−

∗

−

∗

Rev.A 2/4