ROHM EMD22, UMD22N Technical data

DTr 1

t

DTr 2

General purpose (dual digital transistors)

EMD22 / UMD22N

zFeatures zDimensions (Unit : mm)

1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package.

2) Mounting possible with EMT3 or UMT3 automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

A PNP and NPN digital transistor
(Each with a single built in resistor)

zPackaging specifications

Type

EMD22
UMD22N

Package
Code
Basic ordering

unit (pieces)

T2R

8000

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C) zInner circuit

Parameter Limits

Supply voltage
Input voltage

Output current
Power dissipation

Junction temperature
Storage temperature

120mW per element must not be exceeded

∗

Symbol

CC

V

V

IN

I

O

I

C (MAX)

Pd

Tj

Tstg

∗

50

−5 to +30
100
100
150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

EMD22

ROHM : EMT6

Abbreviated symbol : D22

UMD22N

0.2

0.15

0.1Min.

ROHM : UMT6
EIAJ : SC-88

Abbreviated symbol : D22

EMD22 / UMD22N

R1=4.7kΩ
R

2

=47kΩ

(3)

(4)

0.5

1.0

(2)(5)

0.22

0.13

0.5

(1)

(6)

1.2

1.6

0.5

Each lead has same dimensions

)

)

3

4

(

(

)

5

(

)

6

(

0.65

)

2

(

)

1

(

0.65

1.25

2.1

0.7

Each lead has same dimensions

0to0.1

(3) (2) (1)

R1

DTr2

R2

R1

(4) (5) (6)

R2

1.6

1.3

2.0

0.9

DTr1

SymbolParameter Limits

Supply voltage
Input voltage

Output current
Power dissipation

Junction temperature
Storage temperature

120mW per element must not be exceeded

∗

CC

V

V

IN

I

O

I

C (MAX)

Pd

∗

Tj

Tstg

−50

−30 to +5

−100

−100

150
150

−55 to +150

Uni

V
V

mA

mW

°C
°C

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2009.06 - Rev.B

DTr 1

DTr 2

zElectrical characteristics (Ta=25°C)

Data Sheet EMD22 / UMD22N

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

Transition frequency of the device

∗

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

Transition frequency of the device

∗

V
V

V

I

R

V
V

V

I

R

I (off)

I (on)

O (on)

I

O (off)

G

R

2/R1

f

T

I (off)

I (on)

O (on)

I

O (off)

G

R

2/R1

f

T

I

I

1

∗

I

I

1

∗

Min.

Typ. Max. Unit Conditions

−

−

0.5

1.3

−

−

−

0.1

0.3

−

−

1.8

−

−

0.5

80

−

−

3.29

4.7

6.11

81012

−

250

−

Typ. Max. Unit Conditions

Min.

−0.5

−

−

−

−

−1.3

−0.3

−0.1

−

−1.8

−

−

−0.5

−

−

−

−

80

6.11

4.7

3.29

81012

−

250

−

V

V

mA

µA

−

kΩ

−

MHz

V

V

mA

µA

−

kΩ

−

MHz

V

CC

=5V, IO=100µA

O

=0.3V, IO=5mA

V

O/II

=5mA/0.25mA

I
V

I

=5V

CC

=50V, VI=0V

V

O

=5V, IO=10mA

V

CE

=10V, IE=−5mA, f=100MHz

V

V

CC

=−5V, IO=−100µA

O

=−0.3V, IO=−5mA

V

O/II

=−5mA/−0.25mA

I
V

I

=−5V

V

CC

=−50V, VI=0V

V

O

=−5V, IO=−10mA

CE

=−10V, IE=5mA, f=100MHz

V

−

−

−

−

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.B