ROHM UMB9N Datasheet

Transistors

General purpose
(dual digital transistors)

EMB9 / UMB9N / IMB9A

EMB9 / UMB9N / IMB9A

!!!!

Features

1) Two DTA144Ys in a EMT or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

!!!!

Structure

Epitaxial planar type
PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both DTr
DTr

.

2

and

1

!!!!Equivalent circuit

EMB9 / UMB9N IMB9A

(3) (2) (1)

R

1

R2

DTr2

1=10kΩ

R

2=47kΩ

R

!!!!

Absolute maximum ratings

DTr1

R2

R1

(4) (5) (6)

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

EMB9, UMB9N 150 (TOTAL)

IMB9A 300 (TOTAL)
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

(4) (5) (6)

R1

R2

DTr2

DTr1

R2

R1

(3) (2) (1)

1=10kΩ

R
R2=47kΩ

(Ta = 25°C)

Limits

V

CC

IN

V

O

I

C (Max.)

I

Pd

Tj 150 ˚C

Tstg −55∼+150 ˚C

−50 V

−40

6

−70

−100

Unit

V

mA

mW

!!!!

External dimensions

(Units : mm)

EMB9

(3)

(4)

0.5

1.0

1.6

(2)(5)

0.22

0.13

0.5

(1)

(6)

1.2

1.6

0.5

Each lead has same dimensions

ROHM : EMT6

Abbreviated symbol : B9

UMB9N

ROHM : UMT6
EIAJ : SC-88

0.2

0.15

0.1Min.

)

)

3

4

(

(

)

5

(

)

6

(

0.65

)

2

(

)

1

(

0.65

1.25

2.1

0.7

0to0.1

Each lead has same dimensions

1.3

2.0

0.9

Abbreviated symbol : B9

IMB9A

)

)

6

1

(

(

0.3

)

5

(
)

4

(

0.15

0.3to0.6

ROHM : SMT6
EIAJ : SC-74

Abbreviated symbol : B9

1

∗

2

∗

0.95

2.9

)

1.9

2

(

0.95

)

3

(

1.6

2.8

1.1

0.8

0to0.1

Each lead has same dimensions

Transistors

!!!!Electrical characteristics (Ta = 25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

R2 / R

!!!!Packaging specifications

Package
Code TR T148

Type
EMB9
UMB9N
IMB9A

Basic ordering
unit (pieces)

V
V

V

I

O (off)

I (off)

I (on)

O (on)

I

I

G

I

T

R

1

Min.

−

−1.4

−

−

−

68

−f
7

1

3.7

T2R

8000

EMB9 / UMB9N / IMB9A

Typ. Max. Unit Conditions

V

CC

=

−5V, I

O

=

−

−0.3

−

−0.1

−0.3

−

−

−0.5

−

−

250 − V

10

4.7

V

−

V

mA

0.88

µA

−

−

MHz

13

kΩ

5.7

−−

Taping

3000 3000

O

=

V

O/II

=

I

I

=

−5V

V

CC

V

O

=

V

CE

=

−100µA

−0.3V, I

O

=

−1mA

−5mA/−0.25mA

=

−50V, V

I

=

0V

−5V, I

O

=

−5mA

−10mA, I

E

=

5mA, f=100MHz

−

∗

!!!!Electrical characteristic curves

−100

−50

−20

(V)

−10

I (on)

−5

Ta=−40˚C

25˚C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

100˚C

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

−

1000m

−

500m

−

200m

−

100m

O (on) (V)

−

50m

−

20m

−

10m

−

5m

−

2m

OUTPUT VOLTAGE : V

−

1m

−100µ

−200µ−2m −20m−500µ−5m −50m

Ta=100˚C

−1m −10m −100m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

25˚C

−40˚C

O

(A)

O (A)

VO=−0.3V

lO/lI =20

−10m

−5m

−2m

−1m

(A)

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

OUTPUT CURRENT : Io

−2µ

−1µ

0 −3

Ta=100˚C

25˚C

−40˚C

−0.5 −1 −1.5 −2 −2.5

INPUT VOLTAGE : V

I (off)

(V)

VCC=−5V

Fig.2 Output current vs. input voltage

(OFF characteristics)

1k

500

I

200
100

50

20
10

DC CURRENT GAIN : G

−100µ−1m −10m −100m

Ta=100˚C

25˚C

−40˚C

5

2
1

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

O

VO=−5V

(A)

Fig.3 DC current gain vs. output

current