ROHM UMB3N Datasheet

EMB3 / UMB3N / IMB3A

Transistors

General purpose (dual digital transistors)

EMB3 / UMB3N / IMB3A

!!!!

Features

1) Two DTA143T chips in a EMT or UMT or SMT
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

!!!!

Structure

Dual PNP digital transistor
(each with single built in resistor)

The following characteristics apply to both DTr

and DTr2.

1

!!!!Equivalent circuit

EMB3, UMB3N IMB3A

DTr

2

(4) (5) (6)

R

1

DTr

R

1

(3) (2) (1)

R1=4.7kΩR1=4.7kΩ

1

(3) (2) (1)

DTr

2

1

R

DTr

R

1

(4) (5) (6)

1

!!!!

External dimensions

EMB3, UMB3N

)

5

(

0.2

0.15

0.1Min.

ROHM : UMT6
EIAJ : SC-88

IMB3A

0.3

0.15

0.3to0.6

ROHM : SMT6
EIAJ : SC-74

(Units : mm)

)

)

3

4

(

(

)

6

(

1.25

2.1

0to0.1

Abbreviated symbol: B3

)

6

(
)

5

(
)

4

(

1.6

2.8

0to0.1

Abbreviated symbol: B3

0.65

)

2

(

1.3

)

1

(

0.65

0.9

0.7

Each lead has same dimensions

)

1

(

0.95

2.9

)

1.9

2

(

0.95

)

3

(

1.1

0.8

Each lead has same dimensions

2.0

!!!!Packaging specifications

Package Taping

Type
EMB3
UMB3N
IMB3N

Code
Basic ordering unit (pieces)

T2R

8000

−

−

!!!!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

EMB3,UMB3N 150 (TOTAL)
IMB3A 300 (TOTAL)

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj 150 °C

Tstg −55~+150 °C

Limits

−100 mA

TN

T110

3000

3000

−

−

−

−

Unit

−50 V

−50 V

−5V

1

∗

mW

2

∗

Transistors

!!!!Electrical characteristics (Ta = 25°C)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

Transition frequency of the device

∗

!!!!Electrical characteristic curves

1k

500

FE

200

100

50

20

10

DC CURRENT GAIN : h

−100µ−1m

Fig.1 DC current gain vs. collector

Ta=100°C

25°C

−40°C

5

2
1

−200µ−2m

−500µ−5m

COLLECTOR CURRENT : I

current

−10m

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE (sat)

h

FE

fT − 250 − VCE=10mA, IE=−5mA, f=100MHz

R

1

VCE=−5V

−20m

C

(A)

−50m−100m

Typ. Max. Unit Conditions

Min.

−50

−50

−5

100

−

−

−

−

−

−

−

−

−0.5

−

−

−0.5

−

−

−0.3

250

600

C=−50µA

VI
V

C=−1mA

I

V

E=−50µA

I

µA

V

µA

V

C/IB=−5mA/−2.5mA

V

I
V

−

CB=−50V
EB=−4V

CE=−5V, IC=−1mA

MHz

3.29

4.7

−1

(V)

−500m

CE(sat)

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−100µ−1m

COLLECTOR SATURATION VOLTAGE : V

kΩ

6.11

Ta=100°C

25°C

−40°C

−200µ−2m

−500µ−5m

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation

voltage vs. collector current

−10m

EMB3 / UMB3N / IMB3A

∗

−

lC/lB=20

−20m

−50m−100m

C

(A)