ROHM UMA9N, FMA9A Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
UMA9N / FMA9A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
l
Inner circuit
1) Built-In Biasing Resistors, R1 = R2 = 10kW.
2) Two DTA114E chips in one package.
3) Emitter(GND)-common type
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
l
Application
Interface circuit, Driver circuit
l
Packaging specifications
UMT5
SMT5
UMT5
2021
TR
180
8
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
3,000
A9
FMA9A
SMT5
2928
T148
180
8
3,000
A9
UMA9N
Part No.
Package
Package
size
(mm)
Taping
code
Tr1 and Tr2
V
CC
-50V
I
C(MAX.)
-100mA
Parameter
R
1
10kW
R
2
10kW
FMA9A
(SC-74A)
UMA9N
SOT-353 (SC-88A)
(1)
(5)
(4)
(2)
(3)
UMA9N
FMA9A
(4)
OUT
IN
(3)
GND
(2)
(5)
OUT
IN
(1)
(2)
OUT
IN
(3)
GND
(4)
(1)
OUT
IN
(5)
(2)
(1)
(3)
(4)
(5)
1/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMA9N / FMA9A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
MHz
Transition frequency
fT
*1
V
CE
= -10V, IE = 5mA,
f = 100MHz
-
250
-
kW
Resistance ratio
R2/R
1
-
0.811.2
-
Input resistance
R
1
-
71013
mA
DC current gain
G
I
VO = -5V, IO = -5mA
20--
-
Output current
I
O(off)
V
CC
= -50V, VI = 0V
-
-
-0.5
V
Input current
I
I
VI = -5V
-
-
-0.88
mA
Output voltage
V
O(on)
IO / II = -10mA / -0.5mA
-
-0.1
-0.3
V
V
I(on)
VO = -0.3V, IO = -10mA
-3
-
-
-0.5
Input voltage
V
I(off)
V
CC
= -5V, IO = -100mA
-
-
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
T
j
150
°C
T
stg
-55 to +150
°C
I
C(MAX.)
*1
-100
mA
UMA9N
P
D
*2
150 (Total)
*3
mW
FMA9A
300 (Total)
*4
mW
V
IN
-40 to +10
V
I
O
-50
mA
Parameter
Symbol
Values
Unit
V
CC
-50
V
2/6
2012.06 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMA9N / FMA9A
lElectrical characteristic curves(Ta = 25°C)
0
-10
-20
-30
-40
-50
0 -5 -10
-100μA
0A
-120μA
-140μA
-160μA
-180μA
-200μA
-220μA
-240μA
-260μA
-280μA
-300μA
II=
Ta=25ºC
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : IO [A]
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : IO [A]
3/6
2012.06 - Rev.B
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