ROHM UM6K34N Technical data
0.9V Drive Nch + Nch MOSFET
2
(1) (2)
(6) (5)
(3)
(4)
UM6K34N
Data Sheet
Structure
Silicon N-channel MOSFET
Features
1) Mounting cost and area can be cut in half.
2) Low On-resistance.
3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment.
Application
Interfacing, Switching
Packaging specifications
Package Taping
Type
Code TCN
Basic ordering unit (pieces) 3000
UM6K34N ○
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation
Symbol Limits Unit
DSS
GSS
DP
P
D
*1
s
*1
sp
*2
D
50 V
8V
200 mA
800 mA
125 mA
800 mA
150 mW / TOTAL
120 mW / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Dimensions (Unit : mm)
UMT6
(SC-88)
<SOT-363>
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : K34
Inner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗2
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
∗
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
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Symbol Limits Unit
833 ˚C / W /TOTAL
Rth (ch-a)
*
1042 ˚C / W /ELEMENT
1/6
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Data Sheet
UM6K34N
Electrical characteristics (Ta = 25 C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=8V, VDS=0V
50 - - V ID=1mA, VGS=0V
--1AVDS=50V, VGS=0V
0.3 - 0.8 V VDS=10V, ID=1mA
Conditions
- 1.6 2.2 ID=200mA, VGS=4.5V
- 1.7 2.4 ID=200mA, VGS=2.5V
Static drain-source on-state
resistance
R
DS (on)
*
- 2.0 2.8 ID=200mA, VGS=1.5V
- 2.2 3.3 ID=100mA, VGS=1.2V
- 3.0 9.0 ID=10mA, VGS=0.9V
iss
oss
rss
d(on)
d(off)
*
- 26 - pF VDS=10V
-6-pFV
GS
=0V
- 3 - pF f=1MHz
-5-nsI
*
-8-nsV
*
r
- 17 - ns RL=250
*
- 43 - ns RG=10
*
f
=100mA, VDD 25V
D
=4.5V
GS
Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=200mA, VGS=0V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UM6K34N
Electrical characteristic curves (Ta=25C)
0
0.05
0.1
0.15
0.2
0 0.2 0.4 0.6 0.8 1
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.5V
VGS= 1.2V
VGS= 0.9V
VGS= 0.8V
VGS= 0.7V
Ta=25°C
pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0
0.05
0.1
0.15
0.2
0 2 4 6 8 10
VGS= 0.7V
VGS= 0.9V
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.5V
V
GS
= 1.2V
VGS= 0.8V
Ta=25°C
pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1
V
DS
= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
100
1000
10000
0.001 0.01 0.1 1
V
GS
= 0.9V
V
GS
= 1.2V
V
GS
= 1.5V
V
GS
= 2.5V
V
GS
= 4.5V
.
Ta=25°C
pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
100
1000
10000
0.001 0.01 0.1 1
V
GS
= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
100
1000
10000
0.001 0.01 0.1 1
VGS= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
3/6
2011.04 - Rev.A
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