ROHM UM6K34N Technical data

0.9V Drive Nch + Nch MOSFET

2

(1) (2)

(6) (5)

(3)

(4)

UM6K34N

Data Sheet

 Structure

Silicon N-channel MOSFET

Features

1) Mounting cost and area can be cut in half.

2) Low On-resistance.

3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment.

 Application

Interfacing, Switching

 Packaging specifications

Package Taping

Type

Code TCN
Basic ordering unit (pieces) 3000

UM6K34N ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

50 V

8V

200 mA

800 mA

125 mA

800 mA

150 mW / TOTAL

120 mW / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

Dimensions (Unit : mm)

UMT6

(SC-88)
<SOT-363>

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : K34

Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

∗

 Thermal resistance

Parameter

Channel to Ambient

* Each terminal mounted on a recommended land.

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Symbol Limits Unit

833 ˚C / W /TOTAL

Rth (ch-a)

*

1042 ˚C / W /ELEMENT

1/6

2011.04 - Rev.A

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Data Sheet

UM6K34N

 Electrical characteristics (Ta = 25 C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 0.8 V VDS=10V, ID=1mA

Conditions

- 1.6 2.2 ID=200mA, VGS=4.5V

- 1.7 2.4 ID=200mA, VGS=2.5V

Static drain-source on-state
resistance

R

DS (on)

*

- 2.0 2.8 ID=200mA, VGS=1.5V



- 2.2 3.3 ID=100mA, VGS=1.2V

- 3.0 9.0 ID=10mA, VGS=0.9V

iss

oss

rss

d(on)

d(off)

*

- 26 - pF VDS=10V

-6-pFV

GS

=0V

- 3 - pF f=1MHz

-5-nsI

*

-8-nsV

*

r

- 17 - ns RL=250

*

- 43 - ns RG=10

*

f

=100mA, VDD 25V

D

=4.5V

GS

Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=200mA, VGS=0V

Conditions

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2011.04 - Rev.A

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Data Sheet

UM6K34N

Electrical characteristic curves (Ta=25C)

0

0.05

0.1

0.15

0.2

0 0.2 0.4 0.6 0.8 1

V

GS

= 4.5V

V

GS

= 2.5V

V

GS

= 1.5V

VGS= 1.2V

VGS= 0.9V

VGS= 0.8V

VGS= 0.7V

Ta=25°C
pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0

0.05

0.1

0.15

0.2

0 2 4 6 8 10

VGS= 0.7V

VGS= 0.9V

V

GS

= 4.5V

V

GS

= 2.5V

V

GS

= 1.5V

V

GS

= 1.2V

VGS= 0.8V

Ta=25°C
pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1

V

DS

= 10V

Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 0.9V

V

GS

= 1.2V

V

GS

= 1.5V

V

GS

= 2.5V

V

GS

= 4.5V

.

Ta=25°C
pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

100

1000

10000

0.001 0.01 0.1 1

VGS= 2.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

3/6

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Data Sheet

UM6K34N

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 1.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[m

Ω

]

100

1000

10000

0.001 0.01 0.1 1

V

GS

= 1.2V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[m

Ω

]

100

1000

10000

0.001 0.01 0.1 1

VGS= 0.9V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[m

Ω

]

0.1

1

10

0.01 0.1 1

V

DS

= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.10 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage

SOURCE CURRENT : I

s

[A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

1000

2000

3000

4000

5000

0 1 2 3 4 5 6 7 8

ID= 0.20A

ID= 0.01A

Ta=25°C
pulsed

Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

ON

)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

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Data Sheet

UM6K34N

1

10

100

1000

0.01 0.1 1

t

f

t

d(on)

t

d(off)

T

a

=25°C

V

DD

=25V

V

GS

=4.5V

R

G

=10Ω

Pulsed

t

r

Fig.13 Switching Characteristics

DRAIN-CURRENT : ID[A]

SWITCHING TIME : t [ns]

0

1

2

3

4

0 0.5 1 1.5

Ta=25°C
VDD=25V
ID= 0.2A
RG=10Ω
Pulsed

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

TOTAL GATE CHARGE : Qg [nC]

GATE-SOURCE VOLTAGE : V

GS

[V]

1

10

100

1000

0.01 0.1 1 10 100

C

iss

C

oss

C

rss

T

a

=25°C

f=1MHz
VGS=0V

Fig.15 Typical Capacitance
vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

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2011.04 - Rev.A

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Data Sheet

UM6K34N

S

%

V
V

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

D.U.T.

D

I

V

D

R

L

V

DD

GS
DS

t

d(on)

Fig.1-2　Switching Waveforms

Pulse width

50%

10%

10% 10%

t

on

90%

90% 90

t

d(off)

t

r

t

50%

off

t

f

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

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2011.04 - Rev.A

Notes

Notice

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