Datasheet TT8U2 Datasheet (ROHM)

www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.

1.5V Drive Pch +SBD MOSFET

W

W

TT8U2

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET / schottky barrier diode

TSST8

Features

1) Pch MOSFET and shottky barrier diode are put in TSST8 package.

2) High-speed switching and Low on-resistance.

3) Low voltage drive(1.5V).

4) Built in Low I

shottky barierr daiode.

R

Applications

Switching

Packaging specifications Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

TT8U2 

Absolute maximum ratings (Ta = 25C)

<MOSFET>

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

DSS

GSS

D

DP

S

SP

20 V

10 V

2.4 A

9.6 A

0.8 A

*1

9.6 A

(1) ANODE
(2) ANODE
(3) SOURCE
(4) GATE
(5) DRAIN
(6) DRAIN
(7) CATHODE
(8) CATHODE

Channel temperature Tch 150 C
Power dissipation P

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

*2

D

1.0

/ ELEMENT

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : U02

(8) (7) (6) (5)

∗1

(1) (2) (3) (4)

∗1 BODY DIODE

<Di>

Parameter

Repetitive peak reverse voltage V

Reverse voltage V

Forward current I

Forward current surge peak I

Junction temperature T

Power dissipation P

*1 60Hz / 1Cycle

*2 Mounted on a ceramic board

Symbol Limits Unit

RM

F

FSM

R

*1

j

*2

D

30 V

20 V

1.0 A

3.0 A

150 C

1.0

/ ELEMENT

<MOSFET and Di>

Parameter

Total power dissipation P

Symbol Limits Unit

*

D

1.25 W / TOTAL

Range of Storage temperature Tstg 55 to 150 C

* Mounted on a ceramic board

1/5

2012.02 - Rev.B

TT8U2

Electrical characteristics (Ta=25C)

<MOSFET>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l 2.4 - - S VDS=10A, ID=2.4V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

--100 nA VGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

- 80 105

- 105 140

*

- 150 225

- 180 360

m
m
m
m

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 850 - pF VDS=10V

-60-pFV

- 50 - pF f=1MHz

-9-nsV

*

-25-nsI

*

-55-nsR

*

-45-nsR

*

-6.7-nCV

*

-1.7-nC I

*

-0.6-nCR

*

Conditions

ID=2.4A, VGS=4.5V
ID=1.2A, VGS=2.5V
ID=1.2A, VGS=1.8V
ID=0.5A, VGS=1.5V

=0V

GS

10V,VGS=4.5V

DD

=1.2A,

D

8.3

L

=10

G

10V,VGS=4.5V

DD

=2.4A,

D

4.2 ,RG=10

L

DataSheet

Body diode(source-drain) (Ta=25°C)

<MOSFET>

Parameter
Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

SD

<Di>

Parameter

Symbol Min. Typ. Max. Unit

Forward Voltage drop V
Reverse leakage I

R

Conditions

--1.2 V Is=2.4A, VGS=0V

Conditions

F

- 0.48 0.52 V IF=1.0A

--10AVR=10V

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

2/5

2012.02 - Rev.B

TT8U2

Electrical characteristic curves (Ta=25°C)

<MOSFET>

DataSheet

10

Ta=25°C
Pulsed

8

[A]

VGS= −4.5V

D

VGS= −2.5V

6

4

2

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical output characteristics(Ⅰ)

1000

Ta=25°C
Pulsed

(ON)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

VGS= −1.8V

VGS= −1.5V

VGS= −1.5V
VGS= −1.8V
VGS= −2.5V
VGS= −4.5V

10

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0246810

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.2 Typical output characteristics(Ⅱ)

1000

VGS= −4.5V
Pulsed

(ON)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

Fig.5 Static Drain-Source On-State

VGS= −4.5V
VGS= −2.5V

VGS= −1.5V

DRAIN-CURRENT : -ID[A]

Resistance vs. Drain Current(Ⅱ)

Ta=25°C
Pulsed

VGS= −1.8V

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

10

VDS= −10V
Pulsed

[A]

1

D

Ta=125°C

Ta=75°C
Ta=25°C

0.1

Ta=−25°C

0.01

DRAIN CURRENT : -I

0.001
0 0.5 1 1.5 2

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.3 Typical Transfer Characteristics

1000

VGS= −2.5V
Pulsed

(ON)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

1000

VGS= −1.8V
Pulsed

(ON)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -I

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

[A]

D

1000

VGS= −1.5V
Pulsed

(ON)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅴ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

10

VDS= −10V
Pulsed

1

[S]

0.1

0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs|

DRAIN-CURRENT : -ID[A]

Fig.9 Forward Transfer Admittance

vs. Drain Current

Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

3/5

2012.02 - Rev.B

TT8U2

DataSheet

10

[A]

VGS=0V

s

Pulsed

1

0.1

Ta=125°C
Ta=75°C

0.01

REVERSE DRAIN CURRENT : -I

0.001

00.511.5

Ta=25°C
Ta=−25°C

SOURCE-DRAIN VOLTAGE : -VSD[V]

Fig.10 Reverse Drain Current

vs. Sourse-Drain Voltage

5

[V]

GS

4

3

2

1

GATE-SOURCE VOLTAGE : -V

0

02468

Ta=25°C
VDD= −10V
ID= −2.4A
RG=10Ω
Pulsed

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

250

200

(ON)[mΩ]

DS

150

ID= −1.2A

ID= −2.4A

100

50

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.11 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz

VGS=0V

1000

C

oss

100

CAPACITANCE : C [pF]

10

C

rss

0.01 0.1 1 10 100

GATE-SOURCE VOLTAGE : -VDS[V]

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

C

Ta=25°C
Pulsed

iss

10000

1000

t

f

t

d(off)

100

10

SWITCHING TIME : t [ns]

t

r

1

0.01 0.1 1 10

t

d(on)

DRAIN-CURRENT : -ID[A]

Fig.12 Switching Characteristics

Ta=25°C
VDD= −10V
VGS= −4.5V
RG=10Ω
Pulsed

<Di>

100000

pulsed

10000

[mA]

1000

R

100

10

1

0.1

REVERSE CURRENT : I

0.01
0 5 10 15 20 25 30

REVERSE VOLTAGE : VR[V]

Fig.1 Reverse Current vs. Reverse Voltage

Ta = 125°C

Ta = 75°C

Ta = 25°C

Ta= −25°C

1

pulsed

[A]

F

0.1

0.01

FORWARD CURRENT : I

0.001
0 100 200 300 400 500 600

FORWARD VOLTAGE : VF[mV]

Fig.2 Forward Current vs. Forward Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

4/5

2012.02 - Rev.B

TT8U2

DataSheet

Measurement circuits

V

GS

R

G

I

D.U.T.

D

V

DS

R

L

V

DD

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

RG

I

D.U.T.

D

VDS

RL

VDD

Fig.2-1 Gate Charge Measurement Circuit

V

GS

V

DS

t

d(on)

V

G

V

GS

Fig.2-2 Gate Charge Waveform

Pulse Width

10%

50%

10% 10%

90% 90%

t

r

t

on

90%

t

d(off)

t

50%

off

Fig.1-2 Switching Waveforms

Q

g

QgsQ

gd

Charge

t

f

Notice

1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V

characteristics and therefore, higher leak current. Please consider enough the surrounding

F

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

5/5

2012.02 - Rev.B

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Notice

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

http://www.rohm.com/contact/

R1120A