ROHM TT8U2 Technical data

www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.

1.5V Drive Pch +SBD MOSFET

W

W

TT8U2

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET / schottky barrier diode

TSST8

Features

1) Pch MOSFET and shottky barrier diode are put in TSST8 package.

2) High-speed switching and Low on-resistance.

3) Low voltage drive(1.5V).

4) Built in Low I

shottky barierr daiode.

R

Applications

Switching

Packaging specifications Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

TT8U2 

Absolute maximum ratings (Ta = 25C)

<MOSFET>

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

DSS

GSS

D

DP

S

SP

20 V

10 V

2.4 A

9.6 A

0.8 A

*1

9.6 A

(1) ANODE
(2) ANODE
(3) SOURCE
(4) GATE
(5) DRAIN
(6) DRAIN
(7) CATHODE
(8) CATHODE

Channel temperature Tch 150 C
Power dissipation P

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

*2

D

1.0

/ ELEMENT

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : U02

(8) (7) (6) (5)

∗1

(1) (2) (3) (4)

∗1 BODY DIODE

<Di>

Parameter

Repetitive peak reverse voltage V

Reverse voltage V

Forward current I

Forward current surge peak I

Junction temperature T

Power dissipation P

*1 60Hz / 1Cycle

*2 Mounted on a ceramic board

Symbol Limits Unit

RM

F

FSM

R

*1

j

*2

D

30 V

20 V

1.0 A

3.0 A

150 C

1.0

/ ELEMENT

<MOSFET and Di>

Parameter

Total power dissipation P

Symbol Limits Unit

*

D

1.25 W / TOTAL

Range of Storage temperature Tstg 55 to 150 C

* Mounted on a ceramic board

1/5

2012.02 - Rev.B

TT8U2

Electrical characteristics (Ta=25C)

<MOSFET>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l 2.4 - - S VDS=10A, ID=2.4V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

--100 nA VGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1 AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

- 80 105

- 105 140

*

- 150 225

- 180 360

m
m
m
m

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 850 - pF VDS=10V

-60-pFV

- 50 - pF f=1MHz

-9-nsV

*

-25-nsI

*

-55-nsR

*

-45-nsR

*

-6.7-nCV

*

-1.7-nC I

*

-0.6-nCR

*

Conditions

ID=2.4A, VGS=4.5V
ID=1.2A, VGS=2.5V
ID=1.2A, VGS=1.8V
ID=0.5A, VGS=1.5V

=0V

GS

10V,VGS=4.5V

DD

=1.2A,

D

8.3

L

=10

G

10V,VGS=4.5V

DD

=2.4A,

D

4.2 ,RG=10

L

DataSheet

Body diode(source-drain) (Ta=25°C)

<MOSFET>

Parameter
Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

SD

<Di>

Parameter

Symbol Min. Typ. Max. Unit

Forward Voltage drop V
Reverse leakage I

R

Conditions

--1.2 V Is=2.4A, VGS=0V

Conditions

F

- 0.48 0.52 V IF=1.0A

--10AVR=10V

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

2/5

2012.02 - Rev.B