<MOSFET>
<
<
1.5V Drive Pch +SBD MOSFET
TT8U1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET / schottky barrier diode
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zInner circuit
zPackaging specifications
Type
TT8U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
TSST8
(8) (7)
(1) (2)
∗1 BODY DIODE
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : U01
Each lead has same dimensions
(6) (5)
∗1
(3) (4)
(1) Anode
(2) Anode
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60HZ / 1Cycle
∗2 Mounted on a ceramic board
MOSFET and Di>
Parameter Symbol Unit
Total power dissipation
Range of Storage temperature
∗ Mounted on a ceramic board
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
Symbol
DSS
GSS
D
∗1
DP
S
∗1
SP
∗2
P
D
Symbol
RM
V
R
I
F
∗1
I
FSM
Tj 150
∗2
P
D
∗
P
D
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
Limits
30
20
1.0
3.0
Limits
1.25
−55 to +150
W / ELEMENT1.0
W / ELEMENT1.0
W / TOTAL
1/5
Unit
VV
VV
AI
AI
AI
AI
°CTch
Unit
VV
V
A
A
°C
°CTstg
2009.06 - Rev.A
<MOSFET>
<MOSFET> Body diode (source-drain)
TT8U1
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Parameter Symbol
∗Pulsed
<Di>
Parameter
Forward voltage drop
Reverse leakage
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Min. Typ. Max.
GSS
−−±100 nA VGS=±10V, VDS=0V
Unit
−20 −−VID= −1mA, VGS=0V
DSS
−−−1 µAV
−0.3 −−1.0 V V
− 80 105 I
− 105 140 mΩ
∗
mΩ
I
mΩ− 150 225 ID= −1.2A, VGS= −1.8V
− 180 360 I
∗
2.4 −−SV
Y
fs
− 850 − pF V
iss
− 6050− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
Q
g
∗
gs
∗
gd
9
−
25
−
55
−
45
−
6.7
−
1.7
−
0.6
−−nC
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −2.4A, VGS=0VForward voltage
mΩ
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
VDD −10V
VGS= −4.5V
ID= −1.2A
R
R
V
V
I
RL 4.2Ω / RG=10Ω
Unit
DS
DS
D
D
D
DS
DS
GS
L
G
DD
GS
D
Conditions
= −20V, VGS=0V
= −10V, ID= −1mA
= −2.4A, VGS= −4.5V
= −1.2A, VGS= −2.5V
= −0.5A, VGS= −1.5V
= −10V, ID= −2.4A
= −10V
=0V
8.3Ω
=10Ω
−10V
= −4.5V
= −2.4A
Conditions
Symbol Min. Typ. Max. Unit Conditions
V
F
−
R
−−
I
0.410.37
500
µA
V
= 1.0A
I
F
VR=20V
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.06 - Rev.A
TT8U1
zElectrical characteristics curves
5
Ta= 25°C
Pulsed
4
[A]
D
3
2
DRAIN CURRENT : -I
1
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V] DR AIN-SO URCE VO LTAGE : -VDS[V]
Fi g.1 T ypic al output c haract eris tics (Ⅰ) F ig .2 Typical output char acteri stic s(Ⅱ)
VGS= -10V
= -4.5V
V
GS
VGS= -2.5V
= -1.8V
V
GS
VGS= -1.5V
VGS= -1.4V
5
VGS= - 10V
4
[A]
D
3
2
DRAIN CURRENT : -I
1
0
0246810
VGS= -4.5V
VGS= -1.5V
= -1.4V
V
GS
VGS= -2.5V
= -1.8V
V
GS
Ta=25°C
Pulsed
10
VDS= - 10V
Pulsed
[A]
D
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
DRAIN CURRENT : -I
0.01
0.001
00.511.52
GATE- SOURC E VOLTAGE : - VGS[V]
Fi g.3 T ypic al Tr ansfer Charac teri stic s
Data Sheet
1000
Ta=25°C
Pulsed
]
Ω
(ON)[m
DS
100
VGS= -1.5V
= -1.8V
V
GS
= -2.5V
V
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1110
DRAIN-CURRENT : -I
Fi g.4 St atic D rai n-Sourc e On-Sta te
R esis tance vs. Dr ain C urr ent(Ⅰ)
1000
VGS= -1.8V
Pulsed
]
Ω
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.7 St atic D rai n-Sourc e On-Sta te
Resist ance vs. Drai n Cur rent(Ⅳ)
V
GS
GS
= -4.5V
[A]
D
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -4.5V
Pulsed
]
Ω
(ON)[m
DS
100
RESISTAN CE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.5 St atic D rai n-Sourc e On-Stat e
Resistance vs. Drain Curr ent(Ⅱ)
1000
VGS= -1.5V
Pulsed
]
Ω
(ON)[m
DS
100
Ta= 125°C
Ta=75°C
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -I
Fi g.8 Stat ic Dr ain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅴ)
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
1000
VGS= -2.5V
Pulsed
]
Ω
(ON)[m
DS
100
Ta=125°C
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.6 St atic D rai n-Sourc e On-Sta te
Resistance vs. Drain Curr ent(Ⅲ)
10
VDS= -10V
Pulsed
1
0.1
0.1110
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -ID[A]
Fi g.9 F orward T ransfer Admittanc e
vs. Drai n Curr ent
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.06 - Rev.A
TT8U1
Data Sheet
10
VGS=0V
Pulsed
1
Ta= 125°C
Ta= 75°C
0.1
REVER SE DRAIN C URREN T : -Is [A]
0.01
00.511.5
SOUR CE-DR AIN VOLTAGE : - VSD [V]
Fi g.10 R evers e Drai n Curr ent
vs. Sourse- Drain Voltag e
5
[V]
GS
4
3
2
1
GATE- SOURC E VOLTAGE : -V
0
02468
TOTAL GATE CHARGE : Qg [nC]
Fi g.13 D ynamic Input Char acteri stic s
Ta= 25°C
Ta= -25°C
Ta=25°C
V
DD
= -2.4A
I
D
R
G
Pulsed
= - 10V
=10Ω
250
]
Ω
200
(ON)[m
150
DS
100
ID= -1.2A
50
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON-ST ATE
0
0246810
GATE- SOURCE VOLT AGE : -VGS[V]
Fi g.11 Stat ic Dr ain- Source On- State
Resistance vs. Gate Source Voltage
10000
1000
100
CAPAC ITANCE : C [pF]
10
0.01 0.1 1 10 100
DR AIN-SOU RCE VOLTAGE : -V
Fi g.14 T ypic al Capac itance
vs. Dr ain-Source Voltag e
ID= -2.4A
Coss
Crss
Ta=25°C
Pulsed
Ta= 25°C
f=1MH z
=0VCiss
V
GS
[V]
DS
10000
1000
100
10
SWIT CHING TI ME : t [ns]
t
r
1
0.01 0.1 1 10
100
puls ed
10
[mA]
R
1
0.1
0.01
REVER SE CUR RENT : I
0.001
0.0001
010203040
Fi g.15 R evers e Curr ent vs. Revers e Voltag e
td(off)
t
f
td(on)
DRAIN-CURRENT : -ID[A]
Fi g.12 Swit ching Charac teris tics
REVER SE VOLTAGE : V
Ta=25°C
= -10V
V
DD
= -4.5V
V
GS
=10
R
G
Pulsed
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
[V]
R
Ω
℃
℃
℃
℃
10000
puls ed
[mA]
F
1000
100
Ta = 125
10
FORWARD CURRENT : I
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
FOR WARD VOLTAGE : V
Fi g.16 F orward C urr ent vs. F orward Vol tage
Ta = 75
Ta= 25
Ta= - 25
℃
℃
℃
℃
[V]
F
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.06 - Rev.A
F
it
%
V
V
F
it
S
Fig.2-2 Gate Charge Waveform
V
TT8U1
zMeasurement circuits
Pulse width
D
V
R
G
I
GS
D.U.T.
V
DS
R
L
V
DD
GS
10%
50%
10% 10
DS
90% 90%
t
d(on)
t
r
t
on
90%
t
d(off)
t
off
50%
t
f
Data Sheet
ig.1-1 Switching Time Measurement Circu
Fig.1-2 Switching Waveforms
VG
I
D
D.U.T.
R
L
V
DD
I
G(Const.)
V
GS
R
G
ig.2-1 Gate Charge Measurement Circu
V
D
GS
Q
gs
g
Q
Q
gd
Charge
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.06 - Rev.A
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/contact/
R0039
A
Loading...