ROHM TT8U1 Technical data
<MOSFET>
<
<
1.5V Drive Pch +SBD MOSFET
TT8U1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET / schottky barrier diode
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zInner circuit
zPackaging specifications
Type
TT8U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
TSST8
(8) (7)
(1) (2)
∗1 BODY DIODE
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : U01
Each lead has same dimensions
(6) (5)
∗1
(3) (4)
(1) Anode
(2) Anode
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60HZ / 1Cycle
∗2 Mounted on a ceramic board
MOSFET and Di>
Parameter Symbol Unit
Total power dissipation
Range of Storage temperature
∗ Mounted on a ceramic board
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c
○
2009 ROHM Co., Ltd. All rights reserved.
Symbol
DSS
GSS
D
∗1
DP
S
∗1
SP
∗2
P
D
Symbol
RM
V
R
I
F
∗1
I
FSM
Tj 150
∗2
P
D
∗
P
D
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
Limits
30
20
1.0
3.0
Limits
1.25
−55 to +150
W / ELEMENT1.0
W / ELEMENT1.0
W / TOTAL
1/5
Unit
VV
VV
AI
AI
AI
AI
°CTch
Unit
VV
V
A
A
°C
°CTstg
2009.06 - Rev.A
<MOSFET>
<MOSFET> Body diode (source-drain)
TT8U1
zElectrical characteristics (Ta=25°C)
Data Sheet
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Parameter Symbol
∗Pulsed
<Di>
Parameter
Forward voltage drop
Reverse leakage
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Min. Typ. Max.
GSS
−−±100 nA VGS=±10V, VDS=0V
Unit
−20 −−VID= −1mA, VGS=0V
DSS
−−−1 µAV
−0.3 −−1.0 V V
− 80 105 I
− 105 140 mΩ
∗
mΩ
I
mΩ− 150 225 ID= −1.2A, VGS= −1.8V
− 180 360 I
∗
2.4 −−SV
Y
fs
− 850 − pF V
iss
− 6050− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
Q
g
∗
gs
∗
gd
9
−
25
−
55
−
45
−
6.7
−
1.7
−
0.6
−−nC
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −2.4A, VGS=0VForward voltage
mΩ
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
VDD −10V
VGS= −4.5V
ID= −1.2A
R
R
V
V
I
RL 4.2Ω / RG=10Ω
Unit
DS
DS
D
D
D
DS
DS
GS
L
G
DD
GS
D
Conditions
= −20V, VGS=0V
= −10V, ID= −1mA
= −2.4A, VGS= −4.5V
= −1.2A, VGS= −2.5V
= −0.5A, VGS= −1.5V
= −10V, ID= −2.4A
= −10V
=0V
8.3Ω
=10Ω
−10V
= −4.5V
= −2.4A
Conditions
Symbol Min. Typ. Max. Unit Conditions
V
F
−
R
−−
I
0.410.37
500
µA
V
= 1.0A
I
F
VR=20V
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.06 - Rev.A
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