2.5V Drive Nch MOSFET
1.5V Drive Pch MOSFET
TT8M2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
zFeatures
1) Low on-state resistance.
2) Low voltage drive.
3) High power package.
zApplication zInner circuit
Switching
zPackaging specifications
Type
TT8M2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<Tr1 : Nch>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
∗1 Pw≤10µs, Duty cycle≤1%
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Limits Unit
30
±12
±2.5
∗1
∗1
±10
0.8
10
TSST8
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : M02
(8)
∗2
∗1
(1)
∗1 ESD protection diode
∗2 Body diode
V
V
A
A
A
A
Each lead has same dimensions
∗2
(5)(6)(7)
(1) Tr1 Source
(4)(3)(2)
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
T
C
R
<Tr2 : Pch>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
∗1 Pw≤10µs, Duty cycle≤1%
Continuous
Pulsed
Continuous
Pulsed
<Tr1 AND Tr2>
Parameter
otal power dissipation
hannel temperature
ange of Storage temperature
∗
2 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
< Characteristics for the Tr1( Nch ).>
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Symbol
I
V
(BR) DSS
I
V
R
DS (on)
C
C
C
t
t
Q
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
V
∗Pulsed
GSS
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Symbol
P
D
Tch
Tstg
Min.
Typ. Max.
−−±10
Limits Unit
−20
±10
±2.5
∗1
±10
−0.8
∗1
−10
Limits Unit
∗
1.25
2
1.0
150
−55 to +150
30 −−VID=1mA, VGS=0V
DSS
GS (th)
−−1
0.5 − 1.5
− 65 90 I
∗
− 70 95 mΩmΩID=2.5A, VGS=4V
− 95 130 mΩ ID=2.5A, VGS=2.5V
∗
2.2 −−SV
Y
fs
− 180 −
iss
oss
rss
d (on)
t
r
d (off)
t
Q
Q
gs
gd
− 60
−
∗
−
∗
−
∗
−
∗
−
f
∗
−
g
∗
−
∗
−−
35
30
20
20
3.2
0.9
0.4
−
−
−
7
−
−
−
−
−
Min. Typ. Max.
∗
−−1.2 VForward voltage IS= 2.5A, VGS=0V
SD
Unit
µA
V
GS
µA
VDS=30V, VGS=0V
V
VDS=10V, ID=1mA
=2.5A, VGS=4.5V
D
DS
pF
VDS=10V
pF
VGS=0V
pF
f=1MHz
ns
VDD 15V
ID=1.2A
ns
GS
V
ns
L
R
ns
R
G
nC
V
DD
nC
VGS=4.5V
R
L
nC
Unit
Data Sheet TT8M2
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
Conditions
=±12V, VDS=0V
=10V, ID=2.5A
=4.5V
12.5Ω
=10Ω
15V, ID=2.5A
6Ω, RG=10Ω
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics (Ta=25°C)
< Characteristics for the Tr2( Pch ).>
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.
Typ. Max.
−−±10
−20 −−VID= −1mA, VGS=0V
−−−1
−0.3 −−1.0
− 49 68 I
− 68 95 mΩmΩID= −1.2A, VGS= −2.5V
−
100
150 mΩ ID= −1.2A, VGS= −1.8V
−
140 280
2.5 −−SV
− 1270 −
− 100
−
−
−
−
−
−
−
−−
90
9
30
120
85
12
2.5
2.0
−
−
−
−
−
−
−
−
Min. Typ. Max.
−−−1.2 VForward voltage IS= −2.5A, VGS=0V
Unit
µA
V
=±10V, VDS=0V
GS
µA
VDS= −20V, VGS=0V
V
VDS= −10V, ID= −1mA
= −2.5A, VGS= −4.5V
D
= −0.5A, VGS= −1.5V
I
D
mΩ
= −10V, ID= −2.5A
DS
pF
VDS= −10V
pF
VGS=0V
pF
f=1MHz
ns
V
DD
ID= −1.2A
ns
GS
= −4.5V
V
ns
R
L
8.3Ω
ns
G
=10Ω
R
nC
V
−10V, ID= −2.5A
DD
nC
VGS= −4.5V
R
L
4Ω, RG=10Ω
nC
Unit
Data Sheet TT8M2
Conditions
−10V
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zElectrical characteristics curves
<Nch>
2.5
2
[A]
D
1.5
1
DRAIN CURRENT : I
0.5
0
0 0.2 0.4 0.6 0.8 1
Fi g.1 Typi cal Output C haract eris tics(Ⅰ) Fi g.2 T ypic al Output C haract eris tics(Ⅱ)
VGS= 10V
= 4.5V
V
GS
=4.0V
V
GS
V
= 2.5V
GS
= 2.0V
V
GS
DR AIN-SOU RCE VOLTAGE : VDS[V] DR AIN-SOU RCE VOLTAGE : VDS[V]
VGS= 1.5V
VGS= 1.2V
Ta=25°C
Pulsed
2.5
2
[A]
D
1.5
1
DRAIN CURRENT : I
0.5
0
VGS= 4.5V
V
= 4.0V
GS
= 2.5V
V
GS
0246810
VGS= 1. 5V
VGS= 1. 2V
Ta= 25°C
Pulsed
10
VDS= 10V
Pulsed
[A]
D
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
DRAIN CURRENT : I
0.01
0.001
00.511.52
GATE- SOURC E VOLTAGE : VGS[V]
Fi g.3 Typi cal Tr ansfer Charact eris tics
Data Sheet TT8M2
1000
Ta= 25°C
Pulsed
]
Ω
(on)[m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.1110
DRAIN-CURRENT : I
Fi g.4 Stat ic Dr ain- Source On- State
Resi stance vs. D rain C urre nt(Ⅰ)
1000
VGS= 2. 5V
Pulsed
]
Ω
(on)[m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.7 Stat ic Dr ain- Source On- State
Resi stance vs. D rain C urre nt(Ⅳ)
VGS= 2.5V
= 4.0V
V
GS
V
= 4.5V
GS
[A]
D
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
VGS= 4. 5V
Pulsed
]
Ω
(on)[m
DS
100
RESIST ANCE : R
STATI C DRAIN -SOUR CE ON-ST ATE
10
0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.5 Stat ic D rain- Source On-State
Resi stance vs. D rain C urrent (Ⅱ)
10
VDS= 10V
Pulsed
1
FOR WARD TRANSF ER
ADMITT ANCE : |Yfs| [S]
0.1
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.8 F orward Tr ansfer Admittance
vs. Dr ain Cur rent
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
1000
VGS= 4. 0V
Pulsed
]
Ω
(on)[m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.6 Stat ic Dr ain- Source On- State
Resi stance vs. D rain C urr ent(Ⅲ)
300
]
250
Ω
200
(ON)[m
DS
150
100
RESIST ANCE : R
50
STATI C DRAIN -SOUR CE ON-ST ATE
0
0246810
Fi g.9 Stat ic Dr ain- Source On- State
Resistance vs. Gate Source Voltage
ID= 1. 2A
ID= 2. 5A
GATE-SOURCE VOLTAGE : VGS[V]
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 25°C
Puls ed
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
10
VGS=0V
Pulsed
1
0.1
REVERSE DRAIN CURRENT : Is [A]
0.01
00.511.5
SOURC E-DR AIN VOLTAGE : VSD [V]
Fi g.10 R ever se Dr ain Cur rent
vs. Sourse-Dr ain Voltage
1000
t
f
100
10
SWITC HING TIM E : t [ns]
td(on)
1
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
Ta=25°C RG=10Ω
= 15V Pul sed
V
DD
=4.5V
V
GS
td(off)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
t
Data Sheet TT8M2
5
Ta= 25°C
= 15V
V
DD
[V]
= 2. 5A
I
GS
D
4
=10Ω
R
G
Pulsed
3
2
1
GATE-SOUR CE VOLTAGE : V
0
01234
TOTAL GATE C HARGE : Qg [nC ]
Fi g.11 D ynamic Input Char acteri sti cs
r
1000
Ciss
100
CAPACITANCE : C [pF]
10
Coss
Crss
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fi g.12 T ypic al Capac itance
vs. Drain- Source Voltag e
Ta= 25°C
f=1MHz
=0V
V
GS
[V]
DS
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
<Pch>
[A]
D
DRAIN CURRENT : -I
]
Ω
(ON)[m
DS
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
4
VGS= -1.3V
VGS= -4.5V
= -2.5V
V
GS
= -1.8V
V
GS
= -1.5V
V
GS
VGS= -1.1V
VGS= -1.5V
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
V
GS
[A]
D
Ta=25°C
Pulsed
3
2
1
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fi g.1 Typic al Output Char acteri stic s(Ⅰ) Fi g.2 Typic al Output Char acteri stic s(Ⅱ)
1000
Ta=25°C
Pulsed
100
10
0.1 1 10
DRAIN-CURRENT : -I
Fi g.4 Stati c Dr ain-Sour ce On-State
Resi stance vs. Dr ain Current(Ⅰ)
4
VGS= -10V
= -1.8V
V
[A]
D
DRAIN CURRENT : -I
1000
]
Ω
(ON)[m
DS
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
GS
3
VGS= -1.5V
2
1
0
0246810
VGS= -4.5V
Pulsed
100
10
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.5 Stati c Dr ain-Sour ce On-State
Resi stance vs. Dr ain Current(Ⅱ)
Ta= 25°C
Pulsed
VGS= -1.3V
VGS= -1.2V
VGS= -1.1V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10
VDS= -10V
Pulsed
[A]
D
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
DRAIN CURRENT : -I
0.01
0.001
00.511.5
GATE-SOUR CE VOLTAGE : -VGS[V]
Fi g.3 T ypic al Tr ansfer C haract eris tics
1000
VGS= -2.5V
Pulsed
]
Ω
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1110
DRAIN-CURRENT : -ID[A]
Fi g.6 Stati c Dr ain-Sour ce On-State
Resi stance vs. Dr ain Current(Ⅲ)
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Data Sheet TT8M2
1000
VGS= -1.8V
Pulsed
]
Ω
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1110
DRAIN-CURRENT : -ID[A]
Fi g.7 Stati c Dr ain-Sour ce On-State
Resi stance vs. Dr ain Current(Ⅳ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -1.5V
Pulsed
]
Ω
(ON)[m
DS
100
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.1 1 10
DRAIN-CURRENT : -I
Fi g.8 Stati c Dr ain-Sour ce On-State
Resi stance vs. Dr ain Current(Ⅳ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
100
VDS= -10V
Pulsed
10
Ta= -25°C
1
0
0.1 1 10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -ID[A]
Fi g.9 For ward Trans fer Admitt ance
vs. Drai n Cur rent
Ta=25°C
Ta=75°C
Ta=125°C
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Data Sheet TT8M2
300
]
250
Ω
200
(ON)[m
DS
150
100
RESISTANCE : R
50
STATIC DRAIN-SOURCE ON-STATE
ID= -1.2A
0
0246 810
GATE- SOURC E VOLTAGE : -VGS[V]
Fi g.10 St atic D rain- Sourc e On-Stat e
Resistance vs. Gate Source Voltage
10000
1000
100
CAPACITANCE : C [pF]
Ta=25°C
f=1MH z
=0V
V
GS
10
0.01 0.1 1 10 100
ID= -2.5A
Coss
Crss
DRAIN-SOURCE VOLTAGE : -V
Fi g.13 Typical Capacit ance
vs. Dr ain-Source Voltage
Ta=25°C
Pulsed
Ciss
10
VGS=0V
Pulsed
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fi g.11 R ever se Dr ain Cur rent
vs. Sourse-D rain Voltage
10000
1000
100
10
SWITC HING TIME : t [ns]
1
0.01 0. 1 1 10
[V]
DS
td(off)
t
r
DRAIN-CURRENT : -ID[A]
Fig.14 Switching Characteristics
t
td(on)
Ta=25°C
= -10V
V
DD
=- 4.5V
V
GS
=10Ω
R
G
Pulsed
f
5
[V]
4
GS
3
2
1
GATE- SOURC E VOLTAGE : -V
0
02468101214
TOTAL GATE C HARGE : Qg [nC]
Fi g.12 Dynamic Input C haracter isti cs
Ta=25°C
V
I
D
R
Pulsed
= -10V
DD
= -2.5A
=10Ω
G
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
F
it
%
V
V
F
S
Fig.2-2 Gate Charge Waveform
V
F
it
S
%
V
V
F
S
V
zMeasurement circuits
< Nch >
RG
VGS
D
I
D.U.T.
RL
VDD
VDS
Data Sheet TT8M2
Pulse Width
90%
t
d(off)
t
50%
off
t
f
50%
10%
GS
DS
10% 10
90% 90%
t
d(on)
t
r
t
on
ig.1-1 Switching Time Measurement Circu
V
I
G(Const.)
GS
R
G
D.U.T.
I
D
R
L
V
DD
ig.2-1 Gate charge measurement circuit
< Pch >
D
V
R
G
I
GS
R
L
D.U.T.
V
DD
V
D
V
D
Fig.1-2 Switching Waveforms
V
G
Q
g
GS
Q
gs
Q
gd
Charge
Pulse width
GS
10%
50%
DS
90% 90%
t
d(on)
t
on
90%
10% 10
t
t
d(off)
r
t
50%
off
t
f
ig.3-1 Switching time measurement circu
Fig.3-2 Switching waveforms
VG
D
I
G(Const.)
V
GS
D.U.T.
R
G
I
V
D
R
L
V
DD
GS
Q
gs
g
Q
Q
gd
Charge
ig.4-1 Gate charge measurement circuit
Fig.4-2 Gate charge waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes effor ts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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