ROHM TT8M2 Technical data

2.5V Drive Nch MOSFET

1.5V Drive Pch MOSFET

TT8M2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET/

Silicon P-channel MOSFET

zFeatures

1) Low on-state resistance.

2) Low voltage drive.

3) High power package.

zApplication zInner circuit

Switching

zPackaging specifications

Type

TT8M2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<Tr1 : Nch>

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

∗1 Pw≤10µs, Duty cycle≤1%

Continuous
Pulsed
Continuous
Pulsed

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

Limits Unit

30

±12

±2.5

∗1

∗1

±10

0.8
10

TSST8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : M02

(8)

∗2

∗1

(1)

∗1 ESD protection diode
∗2 Body diode

V
V
A
A
A
A

Each lead has same dimensions

∗2

(5)(6)(7)

(1) Tr1 Source

(4)(3)(2)

(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗1

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

T
C

R

<Tr2 : Pch>

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

∗1 Pw≤10µs, Duty cycle≤1%

Continuous
Pulsed
Continuous
Pulsed

<Tr1 AND Tr2>

Parameter

otal power dissipation

hannel temperature
ange of Storage temperature

∗

2 Mounted on a ceramic board

zElectrical characteristics (Ta=25°C)
< Characteristics for the Tr1( Nch ).>

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Symbol

I

V

(BR) DSS

I

V

R

DS (on)

C

C
C

t

t

Q

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

∗Pulsed

GSS

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

Symbol

P

D

Tch

Tstg

Min.

Typ. Max.

−−±10

Limits Unit

−20
±10

±2.5

∗1

±10

−0.8

∗1

−10

Limits Unit

∗

1.25

2

1.0

150

−55 to +150

30 −−VID=1mA, VGS=0V

DSS

GS (th)

−−1

0.5 − 1.5

− 65 90 I

∗

− 70 95 mΩmΩID=2.5A, VGS=4V

− 95 130 mΩ ID=2.5A, VGS=2.5V

∗

2.2 −−SV

Y

fs

− 180 −

iss
oss
rss

d (on)

t

r

d (off)

t

Q

Q

gs

gd

− 60

−

∗

−

∗

−

∗

−

∗

−

f

∗

−

g

∗

−

∗

−−

35

30
20
20

3.2

0.9

0.4

−

−

−

7

−

−

−

−

−

Min. Typ. Max.

∗

−−1.2 VForward voltage IS= 2.5A, VGS=0V

SD

Unit

µA

V

GS

µA

VDS=30V, VGS=0V

V

VDS=10V, ID=1mA

=2.5A, VGS=4.5V

D

DS

pF

VDS=10V

pF

VGS=0V

pF

f=1MHz

ns

VDD 15V

ID=1.2A

ns

GS

V

ns

L

R

ns

R

G

nC

V

DD

nC

VGS=4.5V
R

L

nC

Unit

Data Sheet TT8M2

V
V
A
A
A
A

W / TOTAL

W / ELEMENT

°C
°C

Conditions

=±12V, VDS=0V

=10V, ID=2.5A

=4.5V

12.5Ω
=10Ω

15V, ID=2.5A

6Ω, RG=10Ω

Conditions

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)
< Characteristics for the Tr2( Pch ).>

Parameter

Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

r

t

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10

−20 −−VID= −1mA, VGS=0V

−−−1

−0.3 −−1.0

− 49 68 I

− 68 95 mΩmΩID= −1.2A, VGS= −2.5V

−

100

150 mΩ ID= −1.2A, VGS= −1.8V

−

140 280

2.5 −−SV

− 1270 −

− 100

−

−

−

−

−

−

−

−−

90

9

30

120

85
12

2.5

2.0

−

−

−

−

−

−

−

−

Min. Typ. Max.

−−−1.2 VForward voltage IS= −2.5A, VGS=0V

Unit

µA

V

=±10V, VDS=0V

GS

µA

VDS= −20V, VGS=0V

V

VDS= −10V, ID= −1mA

= −2.5A, VGS= −4.5V

D

= −0.5A, VGS= −1.5V

I

D

mΩ

= −10V, ID= −2.5A

DS

pF

VDS= −10V

pF

VGS=0V

pF

f=1MHz

ns

V

DD

ID= −1.2A

ns

GS

= −4.5V

V

ns

R

L

8.3Ω

ns

G

=10Ω

R

nC

V

−10V, ID= −2.5A

DD

nC

VGS= −4.5V
R

L

4Ω, RG=10Ω

nC

Unit

Data Sheet TT8M2

Conditions

−10V

Conditions

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c

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A