Datasheet TT8K2 Datasheet (ROHM)

C

e

e

2.5V Drive Nch MOSFET

TT8K2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low on-state resistance with fast switching.

2) Low voltage drive (2.5V).

zApplication zInner circuit

Switching

zPackaging specifications

Type

TT8K2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS

V
V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Limits Unit

30

±12

±2.5

∗1

±10

0.8

∗1

∗2

10

1.25

1.0

150

−55 to +150

zThermal resistance

Parameter Symbol Limits Unit

100

hannel to ambient

∗ When mounted on a ceramic board

Rth (ch-a)

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2009 ROHM Co., Ltd. All rights reserved.

∗

°C / W / ELEMENT125

TSST8

∗2

∗1 ESD protection diode
∗2 Body diode

V
V
A
A
A
A

W / TOTAL

W / ELEMENT

°C
°C

°C / W / TOTAL

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : K02

Each lead has same dimensions

(8)

∗2

∗1

(1)

(5)(6)(7)

(1) Tr1 Sourc

(4)(3)(2)

(2) Tr1 Gate
(3) Tr2 Sourc
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗1

2009.04 - Rev.A

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10

30 −−VID=1mA, VGS=0V

−−1

0.5 − 1.5

− 65 90 I

− 70 95 mΩmΩID=2.5A, VGS=4V

− 95 130 mΩ ID=2.5A, VGS=2.5V

2.2 −−SV

− 180 −

− 60

−

−

−

−

−

−

−

−−

35

30
20
20

3.2

0.9

0.4

−

−

−

7

−

−

−

−

−

Min. Typ. Max.

−−1.2 VForward voltage IS= 2.5A, VGS=0V

Unit

µA

V

GS

µA

VDS=30V, VGS=0V

V

VDS=10V, ID=1mA

=2.5A, VGS=4.5V

D

DS

pF

VDS=10V

pF

VGS=0V

pF

f=1MHz

ns

VDD 15V

ID=1.2A

ns

GS

V

ns

L

R

ns

R

G

nC

V

DD

nC

VGS=4.5V
R

L

nC

Unit

Data Sheet TT8K2

Conditions

=±12V, VDS=0V

=10V, ID=2.5A

=4.5V

12.5Ω
=10Ω

15V, ID=2.5A

6Ω, RG=10Ω

Conditions

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2009 ROHM Co., Ltd. All rights reserved.

2009.04 - Rev.A

V

V

V

V

V

zElectrical characteristics curves

Data Sheet TT8K2

2.5

2

[A]

D

1.5

1

DRAIN CURRENT : I

0.5

0

0 0.2 0.4 0.6 0.8 1

Fi g.1 Typi cal Output C haract eris tics(Ⅰ) Fi g.2 T ypic al Output C haract eris tics(Ⅱ)

1000

Ta= 25°C
Pulsed

]

Ω

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.1110

Fi g.4 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅰ)

VGS= 10

VGS= 4.5

VGS=4.0
VGS= 2.5
VGS= 2.0

DR AIN-SOU RCE VOLTAGE : VDS[V]

DRAIN-CURRENT : I

VGS= 1.5V

VGS= 1.2V

VGS= 2.5V
V

= 4.0V

GS

= 4.5V

V

GS

[A]

D

Ta= 25°C
Pulsed

2.5

2

[A]

D

1.5

1

DRAIN CURRENT : I

0.5

0

1000

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STAT IC DR AIN- SOURC E ON- STATE

10

0.1 1 10

VGS= 4.5V

= 4.0V

V

GS

= 2.5V

V

GS

VGS= 1.5V

VGS= 1. 2V

024 6810

DR AIN-SOU RCE VOLTAGE : V

VGS= 4. 5V
Pulsed

DRAIN-CURRENT : ID[A]

Fi g.5 Stat ic D rain- Source On-State

Resi stance vs. D rain C urrent (Ⅱ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=25°C
Pulsed

[V]

DS

10

VDS= 10V
Pulsed

[A]

Ta= 125°C

D

1

Ta= 75°C

Ta= 25°C
Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.511.52

GATE- SOURCE VOLT AGE : VGS[V]

Fi g.3 T ypic al Tr ansfer Charac teris tics

1000

VGS= 4. 0V
Pulsed

]

Ω

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain- Source On- State

Resi stance vs. D rain C urrent (Ⅲ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 2. 5V
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.7 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅳ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

10

VDS= 10V
Pulsed

1

FOR WARD TRANSF ER

ADMITTANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.8 F orward T ransfer Admittanc e
vs. Drain C urr ent

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

10

VGS=0V
Pulsed

1

Ta= 125°C

0.1

REVER SE DRAIN C URREN T : Is [A]

0.01

00.511.5

SOUR CE-DR AIN VOLTAGE : VSD [V]

Fi g.9 R evers e Drai n Cur rent
vs. Sourse- Drain Voltag e

Ta=75°C
Ta=25°C
Ta= -25°C

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2009.04 - Rev.A

F

it

%

V
V

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

Data Sheet TT8K2

300

]

250

Ω

200

(ON)[m

DS

150

100

RESIST ANCE : R

50

STATIC DRAIN-SOURCE ON-STATE

0

0246810

Fi g.10 Stati c Dr ain-Sour ce On- State
Resis tance vs. Gate Source Voltage

ID= 1.2A

ID= 2.5A

GATE-SOURCE VOLTAGE : VGS[V]

1000

Ciss

100

CAPACITANCE : C [pF]

10

Coss

Crss

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

Fi g.13 Typi cal Capac itance
vs. Drain-Sourc e Voltage

zMeasurement circuits

V

GS

R

G

D

I

D.U.T.

Ta= 25°C
Pulsed

Ta= 25°C
f=1MH z
V

=0V

GS

[V]

DS

R

L

V

DD

1000

t

f

100

10

SWITC HING TIM E : t [ns]

td(on)

1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.11 Switching Characteristics

V

DS

GS
DS

Ta= 25°C RG=10Ω
V

= 15V Puls ed

DD

=4.5V

V

GS

td(off)

t

r

Pulse Width

50%

10%

90%

10% 10

50%

5

Ta= 25°C
V

= 15V

DD

[V]

GS

= 2.5A

I

D

4

R

=10Ω

G

Puls ed

3

2

1

GATE-SOURCE VOLTAGE : V

0

01234

TOTAL GATE CH ARGE : Qg [nC]

Fi g.12 D ynamic Input Charact erist ics

90% 90%

t

d(on)

t

t

on

t

r

d(off)

t

f

t

off

ig.1-1 Switching Time Measurement Circu

V

GS

D.U.T.

R

G

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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D

I

V

DS

R

L

V

DD

Fig.1-2 Switching Waveforms

VG

g

Q

GS

Q

gs

Q

gd

Charge

2009.04 - Rev.A

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