ROHM TT8K2 Technical data

C

e

e

2.5V Drive Nch MOSFET

TT8K2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low on-state resistance with fast switching.

2) Low voltage drive (2.5V).

zApplication zInner circuit

Switching

zPackaging specifications

Type

TT8K2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS

V
V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Limits Unit

30

±12

±2.5

∗1

±10

0.8

∗1

∗2

10

1.25

1.0

150

−55 to +150

zThermal resistance

Parameter Symbol Limits Unit

100

hannel to ambient

∗ When mounted on a ceramic board

Rth (ch-a)

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2009 ROHM Co., Ltd. All rights reserved.

∗

°C / W / ELEMENT125

TSST8

∗2

∗1 ESD protection diode
∗2 Body diode

V
V
A
A
A
A

W / TOTAL

W / ELEMENT

°C
°C

°C / W / TOTAL

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : K02

Each lead has same dimensions

(8)

∗2

∗1

(1)

(5)(6)(7)

(1) Tr1 Sourc

(4)(3)(2)

(2) Tr1 Gate
(3) Tr2 Sourc
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗1

2009.04 - Rev.A

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10

30 −−VID=1mA, VGS=0V

−−1

0.5 − 1.5

− 65 90 I

− 70 95 mΩmΩID=2.5A, VGS=4V

− 95 130 mΩ ID=2.5A, VGS=2.5V

2.2 −−SV

− 180 −

− 60

−

−

−

−

−

−

−

−−

35

30
20
20

3.2

0.9

0.4

−

−

−

7

−

−

−

−

−

Min. Typ. Max.

−−1.2 VForward voltage IS= 2.5A, VGS=0V

Unit

µA

V

GS

µA

VDS=30V, VGS=0V

V

VDS=10V, ID=1mA

=2.5A, VGS=4.5V

D

DS

pF

VDS=10V

pF

VGS=0V

pF

f=1MHz

ns

VDD 15V

ID=1.2A

ns

GS

V

ns

L

R

ns

R

G

nC

V

DD

nC

VGS=4.5V
R

L

nC

Unit

Data Sheet TT8K2

Conditions

=±12V, VDS=0V

=10V, ID=2.5A

=4.5V

12.5Ω
=10Ω

15V, ID=2.5A

6Ω, RG=10Ω

Conditions

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2009 ROHM Co., Ltd. All rights reserved.

2009.04 - Rev.A