Datasheet TT8K11 Datasheet (ROHM)

Data Sheet

4V Drive Nch + Nch MOSFET

TT8K11

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSST8

Features

1) Low on-resistance.

2) Low voltage drive(4V drive).

3) Small surface mount package(TSST8).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TCR
Basic ordering unit (pieces) 3000

TT8K11 

 Absolute maximum ratings (Ta = 25C)

<It is the same ratings for the Tr1 and Tr2.>

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

30 V

20 V

3A

12 A

0.8 A

12 A

1.25 W / TOTAL

1.0 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : K11

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

(8) (7)

∗1

(1) (2)

1 ESD PROTECTION DIODE
2 BODY DIODE

(6) (5)

∗2

∗1

(3) (4)

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Ambient Rth (ch-a)

*Mounted on a ceramic board.

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*

100 C / W/ TOTAL
125 C / W/ ELEMENT

1/6

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Data Sheet

TT8K11

 Electrical characteristics (Ta = 25C)

<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1A

-5171 I

*

R

DS (on)

-6794 I

- 78 109 I

*

l 2.0 - - S VDS=10V, ID=3A

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 140 - pF VDS=10V

- 55 - pF VGS=0V

- 28 - pF f=1MHz

-5-nsV

*

- 13 - ns VGS=4.5V

*

- 20 - ns RL=10

*

-3-nsR

*

- 2.5 - nC VDD 15V, ID=3A

*

- 0.8 - nC VGS=5V

*

- 0.6 - nC

*

m

Conditions

=3A, VGS=10V

D

=3A, VGS=4.5V

D

=3A, VGS=4V

D

15V, ID=1.5A

DD

=10

G

Body diode characteristics (Source-Drain)

<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3A, VGS=0V

Conditions

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Data Sheet

TT8K11

Electrical characteristic curves (Ta=25C)

0

1

2

3

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

T

a

=25°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

0

1

2

3

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

Ta=25°C
pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V

T

a

=25

°C

pulsed

VGS=4.0V

VGS=10V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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Data Sheet

TT8K11

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.001

0.01

0.1

1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

50

100

150

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

Ta=25°C
pulsed

ID=3.0A

ID=1.5A

1

10

100

1000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on) tr

t

d(off) tf

V

DD

≒15V

V

GS

=4.5V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 1 2 3 4 5

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD=15V
I

D

=3A

Pulsed

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Data Sheet

TT8K11

10

100

1000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz
VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse : 1Unit

Mounted on a ceramic board.
(30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=125°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

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Data Sheet

TT8K11

F

it

%

V
V

F

S

V

 Measurement circuits

V

GS

D.U.T.

R

G

Pulse width

D

I

V

DS

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

ig.1-1 Switching Time Measurement Circu

V

I

G(Const.)

GS

D.U.T.

D

I

V

R

L

V

DD

D

Fig.1-2 Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

ig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

 Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

6/6

2011.08 - Rev.A

Notes

Notice

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