ROHM TT8K11 Technical data
Data Sheet
4V Drive Nch + Nch MOSFET
TT8K11
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
TSST8
Features
1) Low on-resistance.
2) Low voltage drive(4V drive).
3) Small surface mount package(TSST8).
Application
Switching
Packaging specifications
Package Taping
Type
Code TCR
Basic ordering unit (pieces) 3000
TT8K11
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation
Symbol Limits Unit
DSS
GSS
DP
P
D
*1
s
*1
sp
*2
D
30 V
20 V
3A
12 A
0.8 A
12 A
1.25 W / TOTAL
1.0 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : K11
Inner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
(8) (7)
∗1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(6) (5)
∗2
∗1
(3) (4)
Thermal resistance
Parameter
Symbol Limits Unit
Channel to Ambient Rth (ch-a)
*Mounted on a ceramic board.
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*
100 C / W/ TOTAL
125 C / W/ ELEMENT
1/6
2011.08 - Rev.A
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Data Sheet
TT8K11
Electrical characteristics (Ta = 25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
30 - - V ID=1mA, VGS=0V
--1AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1A
-5171 I
*
R
DS (on)
-6794 I
- 78 109 I
*
l 2.0 - - S VDS=10V, ID=3A
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
- 140 - pF VDS=10V
- 55 - pF VGS=0V
- 28 - pF f=1MHz
-5-nsV
*
- 13 - ns VGS=4.5V
*
- 20 - ns RL=10
*
-3-nsR
*
- 2.5 - nC VDD 15V, ID=3A
*
- 0.8 - nC VGS=5V
*
- 0.6 - nC
*
m
Conditions
=3A, VGS=10V
D
=3A, VGS=4.5V
D
=3A, VGS=4V
D
15V, ID=1.5A
DD
=10
G
Body diode characteristics (Source-Drain)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=3A, VGS=0V
Conditions
2/6
2011.08 - Rev.A
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Data Sheet
TT8K11
Electrical characteristic curves (Ta=25C)
0
1
2
3
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
T
a
=25°C
pulsed
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
0
1
2
3
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=2.5V
Ta=25°C
pulsed
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V
T
a
=25
°C
pulsed
VGS=4.0V
VGS=10V
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.08 - Rev.A
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