ROHM TT8K1 Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

1.５V Drive Nch MOSFET

(1)

4)

(5)(6)(7)

TT8K1

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) High power package.

3) 1.5V drive.

 Application

Switching

TSST8

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : K01

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

TT8K1 

 Absolute maximum ratings (Ta = 25C)

<It is the same ratings for the Tr1 and Tr2.>

Parameter
Drain-source voltage V
Gate-source voltage V

Drain current
Source current

(Body Diode)

Continuous I
Pulsed I
Continuous I
Pulsed I

Power dissipation

Symbol Limits Unit

DSS
GSS

DP

P

D

*1

s

*1

sp

*2

D

20 V

10 V

2.5 A

10 A

0.8 A
10 A

1.25 W / TOTAL

1.0 W / ELEMENT

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2 ∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(8)

∗1

∗1

(

(3)(2)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

*Mounted on a ceramic board.

Symbol Limits Unit

100 °C / W /TOTAL

*

125 °C / W /ELEMENT

1/5

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

TT8K1

 Electrical characteristics (Ta = 25C)

<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1 V VDS=10V, ID=1mA

-5272 I

-6590 I

*

- 85 120 ID=1.2A, VGS=1.8V

m

Conditions

=2.5A, VGS=4.5V

D

=2.5A, VGS=2.5V

D

- 100 140 ID=0.5A, VGS=1.5V

iss

oss

rss

d(on)

d(off)

gd

*

- 260 - pF VDS=10V

- 65 - pF VGS=0V

- 35 - pF f=1MHz

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

-9-nsI

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

- 17 - ns VGS=4.5V

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

r

*

*

*

*

*

*

*

*

*

*

*

*

- 28 - ns RL 8.3

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

***

f

g

gs

- 17 - ns RG=10

*

*

*

*

*

*

- 3.6 - nC ID=2.5A, V

*

*

*

*

*

*

- 0.7 - nC VGS=4.5V RL 4

- 0.6 - nC RG=10

*

*

*

*

*

=1.2A, VDD 10V

D

10V

DD

Forward transfer admittance l Yfs l 2.7 - - S ID=2.5A, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

SD

- - 1.2 V Is=2.5A, VGS=0V

Conditions

2/5

2010.07- Rev.A