Datasheet TT8J2 Datasheet (ROHM)

C

4V Drive Pch MOSFET

TT8J2

zStructure zDimensions (Unit : mm) Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) Low voltage drive. (4V)

zApplications Switching

zPackaging specifications zInner circuit

Type

TT8J2

Package Code Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.>

∗1

∗1 ∗2

−55 to +150

Limits

−30 ±20

±2.5

±10

−0.8

−10

1.25

1.0

150

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Total power dissipation Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

P

D

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

Rth(ch-a)

100 125

°C / W / TOTAL

°C / W / ELEMENT

TSST8

(8) (7)

∗2

(1) (2)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Unit

VV VV AI AI AI AI

W / TOTAL

W / ELEMENT

°CTch °CTstg

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : J02

(6) (5)

∗2

∗1

(3) (4)

Each lead has same dimensions

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain

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TT8J2

zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol Gate-source leakage Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

V

R

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

Min. Typ. Max.

I

GSS

−−±10 µAVGS=±20V, VDS=0V

−30 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−1.0 −−2.5 V V

− 60 84 I

∗

DS (on)

Y

C

C C

t

d (on)

t

d (off)

Q

− 95 130 mΩmΩI

∗

1.8 −−SV

fs

− 460 − pF V

iss

− 6540− pF V

oss

−

rss

∗

t

r

∗

t

f

∗

g

∗

gs

∗

gd

7

−

20

−

35

−

14

−

4.8

−

1.8

−

1.2

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −2.5A, VGS=0VForward voltage

Unit

= −30V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −2.5A, VGS= −10V

D

= −1.2A, VGS= −4.5V

D

mΩ− 115 160 ID= −1.2A, VGS= −4V

= −10V, ID= −2.5A

DS

= −10V

DS

=0V

GS

− pF f=1MHz

− ns

− nC

VDD −15V

V

GS

= −10V

ID= −1.2A R

L

12.5Ω

G

=10Ω

R V

−15V

DD

V

= −5V

GS

I

= −2.5A

D

RL 6Ω / RG=10Ω

Unit

Conditions

Data Sheet

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STATIC

DRAIN

SOURCE

ON

STATE

|

[

]

TT8J2

zElectrical characteristic curves

Ta=25°C

10

Pulsed

VGS= -10V

8

V

= -6.0V

[A]

DRAIN CURRENT : -I

GS

D

V

= -4.5V

GS

6

V

= -4.0V

GS

4

2

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

VGS= -3.4V

VGS= -3.0V

10

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0246810

VGS= -10V

V

= -4.5V

GS

V

= -4.0V

GS

Ta=25°C Pulsed

VGS= -3.4V

VGS= -3.0V

VGS= -2.6V

10

VDS= -10V

Pulsed

[A]

1

D

Ta= 125°C

Ta= 75°C Ta= 25°C

0.1 Ta= - 25°C

0.01

DRAIN CURRENT : -I

0.001

01234

GATE-SOURC E VOLTAGE : -VGS[V]

Data Sheet

1000

Ta=25°C

]

Pulsed

Ω

-

(ON)[m

DS

100

-

RESISTANCE : R

10

0.1 1 10

DRAIN-CURRENT : -I

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

1000

VGS= -4.0V

]

Ω

Pulsed

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

VGS= -4.0V

V

= -4.5V

GS

V

= -10V

GS

[A]

D

Ta=125°C

Ta=75°C Ta=25°C

Ta= -25°C

1000

VGS= -10V

]

Ω

Pulsed

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

S

10

VDS= -10V

Yfs

Pulsed

1

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE :

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance

vs. Drain Current

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

Ta= -25°C Ta=25°C Ta=75°C Ta=125°C

1000

VGS= -4.5V

]

Ω

Pulsed

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

10

VGS=0V

Pulsed

Ta=125°C

Ta=75°C

1

Ta=25°C

Ta=-25°C

0.1

0.01

REVERSE DRAIN CURRENT : -Is [A]

00.511.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

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f

E

[

]

TT8J2

500

]

Ω

400

(ON)[m

300

DS

ID= -2.5A

Ta=25°C Pulsed

1000

ns

100

td(off)

Ta=25°C V

= -15V

DD

= -10V

V

GS

t

=10Ω

R

G

Pulsed

10

[V]

8

GS

6

Data Sheet

200

100

ID= -1.2A

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STAT

0

0 5 10 15

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

10000

Ta=25°C f=1MHz V

=0V

1000

CAPACITANCE : C [pF]

GS

100

Coss

Crss

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fig.13 Typical Capacitance vs. Drain-Source Voltage

Ciss

10

SWITCHING TIME : t

td(on)

t

r

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

[V]

DS

4

2

0

GATE-SOURCE VOLTAGE : -V

0246810

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C V

= -15V

DD

= -2.5A

I

D

=10Ω

R

G

Pulsed

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Fig.1-1 Switching Time Measurement Circuit

%

V

Fig.2-1 Gate Charge Measurement Circuit

S

Fig.2-2 Gate Charge Waveform

V

TT8J2

zMeasurement circuits

V

GS

R

G

D

I

D.U.T.

V

DS

R

L

V

DD

GS

DS

t

d(on)

Pulse width

10%

50%

90% 90%

t

on

90%

10% 10

t

d(off)

r

50%

t

off

t

f

Data Sheet

Fig.1-2 Switching Waveforms

V

G

GS

QgsQ

g

Q

gd

Charge

I

G(Const.)

V

GS

R

G

I

D.U.T.

D

V

D

R

L

V

DD

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

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Appendix

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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

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sponsibility for such damage.

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Appendix-Rev4.1

Datasheet TT8J2 Datasheet (ROHM)

Specifications and Main Features

Frequently Asked Questions

User Manual