ROHM TT8J2 Technical data

C

4V Drive Pch MOSFET

TT8J2

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) Low voltage drive. (4V)

zApplications
Switching

zPackaging specifications zInner circuit

Type

TT8J2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

∗1

∗1
∗2

−55 to +150

Limits

−30
±20

±2.5

±10

−0.8

−10

1.25

1.0

150

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

Rth(ch-a)

100
125

°C / W / TOTAL

°C / W / ELEMENT

TSST8

(8) (7)

∗2

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Unit

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT

°CTch
°CTstg

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : J02

(6) (5)

∗2

∗1

∗1

(3) (4)

Each lead has same dimensions

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

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c

○

2009 ROHM Co., Ltd. All rights reserved.

1/5

2009.02 - Rev.A

TT8J2

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

Min. Typ. Max.

I

GSS

−−±10 µAVGS=±20V, VDS=0V

−30 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−1.0 −−2.5 V V

− 60 84 I

∗

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 95 130 mΩmΩI

∗

1.8 −−SV

fs

− 460 − pF V

iss

− 6540− pF V

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

7

−

20

−

35

−

14

−

4.8

−

1.8

−

1.2

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −2.5A, VGS=0VForward voltage

Unit

= −30V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −2.5A, VGS= −10V

D

= −1.2A, VGS= −4.5V

D

mΩ− 115 160 ID= −1.2A, VGS= −4V

= −10V, ID= −2.5A

DS

= −10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC

VDD −15V

V

GS

= −10V

ID= −1.2A
R

L

12.5Ω

G

=10Ω

R
V

−15V

DD

V

= −5V

GS

I

= −2.5A

D

RL 6Ω / RG=10Ω

Unit

Conditions

Conditions

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.02 - Rev.A