ROHM TT8J1 Schematic [ru]
A
C
1.5V Drive Pch+Pch MOSFET
TT8J1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications zInner circuit
Type
TT8J1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
∗2
−55 to +150
Limits
−12
±10
±2.5
±10
−0.8
−10
1.25
1.0
150
W / TOTAL
W / ELEMENT
zThermal resistance
Parameter
hannel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
Rth(ch-a)
100
125
°C / W / TOTAL
°C / W / ELEMENT
TSST8
Abbreviated symbol : J01
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
VV
VV
AI
AI
AI
AI
°CTch
°CTstg
(8) (7) (5)(6)
(1) (2) (4)(3)
(6) (5)
∗2
(3) (4)
Each lead has same dimensions
(1) Tr1 Source
∗1
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.
A
TT8J1 Data Sheet
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
I
GSS
−−±10 µAVGS=±10V, VDS=0V
Unit
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
V
−−−1 µAV
−0.3 −−1.0 V V
− 44 61 I
− 60 84 mΩ
∗
− 110 220 I
∗
3.5 −−SV
fs
− 1350 − pF V
iss
− 130
oss
−
rss
∗
−
∗
−
t
r
∗
−
∗
−
t
f
∗
−
g
∗
−
gs
∗
−−nC
gd
− pF V
− pF f=1MHz
125
9
− ns
35
− ns
130
− ns
85
− ns
13
− nC
2.5
− nC
2.0
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −2.5A, VGS=0VForward voltage
mΩ
mΩ− 81 121 ID= −1.2A, VGS= −1.8V
mΩ
Unit
Conditions
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −2.5A, VGS= −4.5V
D
I
= −1.2A, VGS= −2.5V
D
= −0.5A, VGS= −1.5V
D
= −6V, ID= −2.5A
DS
= −6V
DS
=0V
GS
V
DD
−6V
GS
= −4.5V
V
ID= −1.2A
R
L
5Ω
G
=10Ω
R
V
−6V
DD
V
=
−4.5V
GS
I
=
−2.5A
D
RL 2.4Ω / RG=10Ω
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.01 - Rev.
A
E
E
.
E
E
E
TT8J1 Data Sheet
zElectrical characteristic curves
10
Ta=25℃
Pulsed
8
[A]
D
6
4
DRAIN CURRENT - I
2
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE -VDS[V]
VGS= -10V
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
V
= -2.0V
GS
VGS= -1.6V
= -1.2V
V
GS
10
8
[A]
D
6
VGS= -10V
V
= -4.5V
GS
= -2.5V
V
GS
4
DRAIN CURRENT -I
2
0
Ta=25
Pulsed
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
0246810
DRAIN-SOURCE VOLTAGE -V
℃
[V]
DS
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
10
VDS= -6V
Pulsed
[A]
D
1
Ta= 125
Ta= 75°C
Ta= 25°C
Ta= - 25°C
°C
0.1
DRAIN CURRENT : -I
0.01
00.511.5
GATE-SOURCE VOLTAGE : -V
[V]
GS
1000
(on) [mΩ]
DS
100
Ta=25
Pulsed
℃
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
1000
VGS= -1.8V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= -1.5V
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
V
GS
[A]
D
Ta= 125
Ta= 75°C
Ta= 25°C
Ta= - 25°C
[A]
D
1000
VGS= -4.5V
Pulsed
(on) [mΩ]
DS
100
°C
Ta= 125
Ta= 75° C
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
Ta= 25° C
Ta= - 25°C
0.1 1 10
DRAIN CURRENT : -I
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
VGS= -1.5V
Pulsed
(on) [mΩ]
DS
[A]
D
100
°C
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STAT
10
0.1 1 10
DRAIN CURRENT : -I
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Ta= 125
Ta= 75° C
Ta= 25° C
Ta= - 25°C
[A]
D
°C
1000
VGS= -2.5V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE : R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
VGS=0V
Pulsed
°C
Ta= 125
1
Ta= 75°C
Ta= 25°C
Ta= - 25° C
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta= 125
Ta= 75°C
Ta= 25°C
Ta= - 25°C
[A]
D
°C
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c
○
2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.01 - Rev.
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