ROHM SM6K2 Schematic [ru]

Transistors

.

4V Drive Nch+Nch MOS FET

SM6K2

zStructure zExternal dimensions (Unit : mm)
Silicon N-channel
MOSFET transistor

zFeatu res

1) Two RHU002N06 chips in a SMT p ackage.

2) Mounting possible with SMT3 automatic mou nting machin es.

3) Transistor elements are independent, eliminating mutual
interference.

4) Mounting cost and area can be cut in half.

zPackaging specifications zEquivalent circuit

Taping

T110
3000

Type
SM6K2

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

SMT6

1pin mark

(4) (5) (6)

∗2

∗1

∗

A protection diode has been built in between the gate
and the source to protect against static electricity
when the product is in use.
Use the protection circuit when fixed voltages are exceeded

2.9

1.9

0.95

0.95

(5)

(6)

(4)

1.6

(1)

(2)

(3)

0.3

Each lead has same dimensions

Abbreviated symbol : K2

∗1

∗2

(1) TR1 Drain
(2) TR2 Gate
(3) TR2 Source
(4) TR2 Drain
(5) TR1 Gate
(6) TR1 Source

∗1 Gate Protection Diode
∗2 Body Diode

(1)(2)(3)

1.1

0.8

2.8

0.15

SM6K2

0.3Min.

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Drain reverse current

Total power dissipation

Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.

Continuous
Pulsed
Continuous
Pulsed

Symbol Limits Unit

V

DSS

V

GSS

D

DP

I
I

DR

I

DRP

P

D

Tch

Tstg °C −55 to +150

∗1

∗1

∗2

60 V

±20

200I

200
800
300
200
150

mW /

mW / ELEMENT

V
mA
mA800
mA
mA

°C

TOTAL

zThermal resistance

Parameter

Channel to ambient

∗ With each pin mounted on the recommended lands.

Symbol Limits Unit

∗

Rth(ch-a)

416.7
625

°C / W / TOTAL

°C / W / ELEMENT

Rev.B 1/4

Transistors

zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

SM6K2

Parameter
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage

Drain-source on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Symbol

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

l Yfs l

iss

C

oss

C
C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Min.

−

60

−

1

−

−

0.1

−

−

−

−

−

−

−

−

−

−

Typ.

−

−

−

−

1.7

2.8 4.0

−

15

8
4
6

5
12
95

2.2 4.4

0.6

0.3

zBody diode characteristics (Source-drain) (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol

Min. Typ. Max.

V

SD

−−1.2 VForward voltage IS=200mA, VGS=0V

Max.

±10

−

1

2.5

2.4

−

−

−

−

−

−

−

−

−

−

Unit

Unit

V

GS

µA

V

I

D

=1mA, VGS=0V

V

DS

µA

V

DS

V

I

D

=200mA, VGS=10V

Ω

I

D

=200mA, VGS=4V

VDS=10V, ID=200mA

S

pF

V

DS

VGS=0V

pF

f=1MHz

pF
ns

ID=100mA, V

ns

VGS=10V
RL=300Ω

ns

G

R

ns
nC

VDD 30V
V

GS

nC

D

=200mA

I

nC

Test Conditions

=±20V, VDS=0V

=60V, VGS=0V
=10V, ID=1mA

=10V

DD

=10Ω

=10V

Conditions

30V

Rev.B 2/4