ROHM SIR-563ST3F Technical data

SIR-563ST3F

Sensors

Infrared light emitting diode, top view type

SIR-563ST3F

The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavel ength suitable for silicon detectors. It has a wide radiat ion angle and is ideal for
compact optical control equipme nt.

zApplications

Optical control equipmen t
Light source for remote control devi ces

zFeatures

1) High efficiency, high output P

O=1 1.0mW (IF=50mA).

2) Wide radiation angle θ1/2=15deg.

3) Emission spectrum well suited to silicon detectors.
(λP=940nm).

4) Good current-optical output linearity.

5) Long life, high reliability .

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature

∗ Pulse width=0.1msec, duty ratio 1%

I

F

V
P

I

FP

Topr
Tstg

R

D

∗

Rev.A 1/3

zDimensions (Unit : mm)

4−0.6

2− 0.5

Limits

100

5.0

160

0.5

−25 to +85

−40 to +85

Unit

mA

mW

°C
°C

φ5.0±0.2

1

(2.5)

V

A

Notes:

1. Unspecified tolerance

shall be ±0.2.

2. Dimension in parenthesis are
show for reference.

8.7±0.3

1

Max.1

Min.24

2.5±1

2

φ6±0.3

1

Anode

2

Cathode

SIR-563ST3F

Sensors

zElectrical and optical characteristics (Ta = 25°C)

Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency

Symbol

O

P

I

E

V

F

I

R

P

λ

∆λ

θ

1 / 2

tr·tf

f

C

zElectrical and optical characteristic curves

100

80

(mA)

F

60

40

100

(mA)

F

80

60

40

Min.

−

9.0

−

−

−

−

−

−

−

Typ.

11
21

1.34

−

940

40

±15

1.0

1.0

Max.

−

−

1.6
10

−

−

−

−

−

Unit
mW

mW/sr

V
µA
nm
nm

deg

µs

MHz

−25°C
0°C

25°C
50°C
75°C

I

F

=50mA

F

=50mA

I

F

=50mA

I
V

R

=3V

F

=50mA

I
I

F

=50mA

F

=50mA

I

F

=50mA

I
I

F

=50mA

(%)

O

100

Conditions

80

60

40

20

FORWARD CURRENT : I

0

200 406080100

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Forward current

20

FORWARD CURRENT : I

0

012

FORWARD VOLTAGE : VF (V)

Fig.2 Forward current vs.

20

RELATIVE OPTICAL OUTPUT : P

0

920900 940 960 980

OPTICAL WAVELENGTH : λ (nm)

Fig.3 Wavelength

forward voltage

50

(%)

E

40

(mW/sr)

E

30

20

10

EMITTING STRENGTH : I

0

200 406080100

FORWARD CURRENT : I

Fig.4 Emitting strength vs.

forward current

F

(mA)

200

100

50

20

10

RELATIVE EMITTING STRENGTH : I

−25 1007550250
AMBIENT TEMPERATURE : Ta (°C)

Fig.5 Relative emitting strength vs.

ambient temperature

Rev.A 2/3