ROHM SIR-341ST3F Technical data

Infrared light emitting diode, top view type

SIR-341ST3F

The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.

Applications Dimensions (Unit : mm)
Optical control equipment
Light source for remote control devices

Features

1) Compact (3.1mm).

2) High efficiency, high output P

O8.4mW (IF50mA).

3) Wide radiation angle  1/216deg.

4) Peak wavelength well suited to silicon detectors (

5) Good current-optical output linearity.

6) Long life, high reliability.

Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

∗ Pulse width=0.1msec, duty ratio 1%

I

F

V

P

I

FP

Topr

Tstg

R

D

∗

Electrical and optical characteristics (Ta = 25C)

P

V

λ

Δλ

I

I

1 / 2

f

Min.

O

−

E

5.6

F

−

R

−

−

P

−

−

−

C

−

Parameter

Optical output

Emitting strength

Forward voltage

Reverse current

Peak light emitting wavelength

Spectral line half width

Half-viewing angle

Response time

Cut-off frequency

Symbol

θ

tr·tf

P940nm).

Limits

75

5

100

500

−25 to +85

−40 to +85

Typ.

Max.

8.4

18.1

1.3

1.5

−

940

40

±16

1.0

1.0

10

Unit

mA

V

mW

mA

°C

°C

Unit

mW

V

μA

nm

nm

deg

μs

MHz

I

F

=50mA

F

=50mA

I

F

=50mA

I

V

R

=3V

F

=50mA

I

I

F

=50mA

F

=50mA

I

I

F

=50mA

F

=50mA

I

−

mW/sr

−

−

−

−

−

−

4−0.6

2− 0.5

φ3.8±0.3

φ3.5

1

(2.5)

Conditions

φ3.1±0.2

1.1

Max.1

2.5±1

2

Notes:

1. Unspecified tolerance

shall be ±0.2.

2. Dimension in parenthesis are
show for reference.

5.2±0.3

Min.24

1

Anode

2

Cathode

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○c 2012 ROHM Co., Ltd. All rights reserved.

2012.06 - Rev.C

SIR-341ST3F

Electrical and optical characteristic curves

100

80

F (mA)

60

40

50

(mA)

F

40

30

20

−25°C
0°C

25°C
50°C
75°C

(%)

O

Data Sheet

100

80

60

40

20

FORWARD CURRENT : I

0

0 20406080100

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Forward current falloff

50

40

(mW/sr)

E

30

20

10

EMITTING STRENGTH : I

0

200 40 60 80 100

FORWARD CURRENT : I

F

(mA)

Fig.4 Emitting strength vs.

forward current

10°

20°

30°

40°

50°

60°

70°

10

FORWARD CURRENT : I

0

012

FORWARD VOLTAGE : V

Fig.2 Forward current vs. forward voltage

F

(V)

20

RELATIVE OPTICAL OUTPUT : P

0

900 920 940 960 980

OPTICAL WAVELENGTH : λ (nm)

Fig.3 Wavelength

(%)

E

200

100

50

20

RELATIVE EMITTING STRENGTH : I

10

0°

0−20 20 8040 60

AMBIENT TEMPERATURE : Ta (°C)

Fig.5 Relative emitting strength
vs.ambient temperature

100

(%)

80

60

40

80°

90°

0100 80 60 40 20

10° 20° 30° 40° 50° 60° 70° 80° 90°

ANGULAR DISPLACEMENT : θ (deg)RELATIVE EMITTING STRENGTH (%)

Fig.6 Directional pattern

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○c 2012 ROHM Co., Ltd. All rights reserved.

20

RELATIVE EMITTING STRENGTH

2012.06 - Rev.C

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illustrate the standard usage and operations of the Products. The peripheral conditions must
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