ROHM SIR-320ST3F Technical data
SIR-320ST3F
Sensors
Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm spectrum suit able for silicon detec tors. It is small and at the same time has a wide radiation a ngle,
marking it ideal for compact optical control equipment.
zApplications
Optical control equipmen t
Light source for remote control devi ces
zFeatures
1) Compact (φ3.1mm).
2) High efficiency, high output P
O=9.0mW (IF=50mA).
3) Wide radiation angle θ=±18deg.
4) Emission spectrum well suited to silicon detectors
(λ
P=940nm).
5) Good current-optical output linearity.
6) Long life, high reliability .
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
I
F
V
P
I
FP
Topr
Tstg
R
D
∗
Rev.B 1/3
zDimensions (Unit : mm)
Limits
75
5
100
0.5
−25 to +85
−40 to +85
Unit
mA
mW
°C
°C
2− 0.5
V
A
4−0.6
φ3.8±0.3
1
(2.5)
φ3.1±0.2
Notes:
1. Unspecified tolerance
1.1Max.12.5±1
2. Dimension in parenthesis are
5.2±0.3
Min.24
2
2±0.2
shall be ±0.2.
show for reference.
1
Anode
2
Cathode
SIR-320ST3F
Sensors
zElectrical and optical characteristics (Ta = 25°C)
Max.
−
−
1.5
10
−
−
−
−
−
Unit
mW
mW/sr
deg
MHz
−25°C
0°C
25°C
50°C
75°C
I
F
=50mA
F
=50mA
I
V
F
=50mA
I
µA
V
R
=3V
nm
F
=50mA
I
nm
I
F
=50mA
F
=50mA
I
F
=50mA
µs
I
I
F
=50mA
(%)
O
100
80
60
40
20
RELATIVE OPTICAL OUTPUT : P
0
850 900 950 1000 1050
OPTICAL WAVELENGTH : λ (nm)
Conditions
Fig.3 Wavelength
Typ.
P
V
λ
∆λ
I
I
1 / 2
f
Min.
O
E
5.6
F
R
P
C
9
−
−
1.2
−
−
−
940
−
40
−
±18
−
1.0
−
1.0
−
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
Symbol
θ
tr·tf
zElectrical and optical characteristic curves
100
80
(mA)
F
60
40
20
FORWARD CURRENT : I
0
−20 0 20 40 60 80 100
AMBIENT TEMPERATURE : Ta (°C)
FIg.1 Forward current falloff
100
(mA)
F
80
60
40
20
FORWARD CURRENT : I
0
012
FORWARD VOLTAGE : VF (V)
Fig.2 Forward current vs. forward voltage
50
40
(mW/sr)
E
30
20
10
EMITTING STRENGTH : I
0
200 406080100
FORWARD CURRENT : I
Fig.4 Emitting strength vs.
forward current
F
(mA)
(%)
E
200
100
50
20
10
RELATIVE EMITTING STRENGTH : I
−20 80 1006040200
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Radiant intensity vs.
ambient temperature
Rev.B 2/3
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