ROHM SIM-22ST Technical data

Infrared light emitting diode, side-view type

SIM-22ST

The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.

Applications Dimensions (Unit : mm)
Light source for sensors

Features

1) Compact package (4.7x4.6 mm) with lens.

2) High efficiency, high output.

3) Emission spectrum well suited to silicon detectors
(

P = 950 nm).

4) Good current-optical output linearity.

5) Long life, high reliability.

Absolute maximum ratings (Ta=25C)

Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature

Pulse width = 0.1ms, duty ratio 1%

∗

I

F

V
P
I

FP

Topr
Tstg

R

D

∗

Electrical and optical characteristics (Ta=25C)

Parameter Symbol
Emitting strength
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency

According to our measurement procedures.

∗

I

θ

tr tf

Min.

I

V

λ

Δλ

E

E

I

R

1/2

−

0.48

F

−

−

P

−

−

−

−

fc − 1.0 − I

Limits

50

5

80

0.5

−25 to +85

−30 to +100

Max.

Typ.

0.8

1.3

1.3

−

950

40

±30

1.0

−

1.94

1.6
10

−

−

−

−

Unit

mA

V

mW

A

°C
°C

Unit

mW/sr I

mA

V

μA
nm
nm

deg

μs

MHz

F

I

F

F

I
V
I

F

I

F

F

I

F

I

F

2-C0.7

=

10mA

=

10mA

=

50mA

R

=

=

10mA

=

20mA

=

50mA

=

50mA

=

50mA

2−0.65
2−0.45

5V

4.1

4.6

±

0.1

Gate remainder

0.3Max.

1 2

(2.54)

Conditions

∗

0.05

±

1.8

1.0

1.9

2.8

1.0 1.5

1

0.1

±

2.54

0.1

±

4.7

12Min.

Cathode

R0.75

Notes:

1. Tolerances are

otherwise indicated.

2. Value in parenthese is size
at base of leads.

0.15

0.40

0.64

2

Anode

R0.5

R0.5

±

0.2 unless

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

0

e

0

0

)

.

ambient temperature

0

100

9

Electrical and optical characteristic curves

50

(mA)

F

40

30

20

10

FORWARD CURRENT : I

0

−20 0 40 60 8020 10
AMBIENT TEMPERATURE : Ta(

Fig.1 Forward current falloff

200

100

50

20

10

RELATIVE EMITTING STRENGTH : IE (%

−25 10

AMBIENT TEMPERATURE : Ta (°C)

Fig.4 Relative emitting strength vs

°C)

7550250

70

60

mA)

(

F

50

40

30

20

FORWARD CURRENT : I

10

0

0.40 0.8 1.2 1.6

FORWARD VOLTAGE : VF (

−25
0

25
50
75

V)

Fig.2 Forward current vs. forward voltag

(%)

O

80

60

40

20

RELATIVE OPTICAL OUTPUT : P

0

920900 940 960 980 100

OPTICAL WAVELENGTH : λ (

nm)

Fig.5 Wavelength

Data Sheet SIM-22ST

°C
°C
°C
°C
°C

14

12

10

8

6

4

2

EMITTING STRENGTH I : IE (mW / Sr)

0

100 2030405

FORWARD CURRENT : IF(mA)

Fig.3 Emitting strength vs.

forward current

10°

20°

30°

40°

50°

60°

70°

80°

0°

100 80 60 40 20 0

RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : θ

10°0°20° 30° 40° 50° 60° 70° 80° 90°

Fig. 6 Directional pattern

100

80

60

40

20

RELATIVE EMITTING STRENGTH (%)

0

(deg)

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B