ROHM SIM-20ST Technical data

SIM-20ST

Sensors

Infrared light emitting diode, side-view type

SIM-012SB

The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens.

zApplications

Light source for sensors

zFeatures

1) Compact package (4.4x4.3 mm) with lens.

2) High efficiency, high output P

O = 7mW (IF = 50 mA).

3) Emission spectrum well suited to silicon detectors
(λ

P = 950 nm).

4) Good current-optical output linearity.

5) Long life, high reliability .

zAbsolute maximum ratings (Ta=25°C)

Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature

Pulse width = 0.1 ms, duty ratio 1%

∗

Parameter Symbol

IF

R

V

D

P

IFP
Topr
Tstg

∗

zElectrical and optical characteristics (Ta=25°C)

Parameter Symbol
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency

θ

tr・tf

Min.

E

V

λ

∆λ

I

I

R

1/2

−

F

−

−

P

−

−

−

−

fc − 1.0 − I

Rev.A 1/2

zDimensions (Unit : mm)

0.5Max.

Gate remainder

1.5±0.1

1.5

Resin coating

Limits

50

5

80

0.5

−25 to +85

−30 to +100

Typ.

Max.

7.5

1.3

−

950

40

±15

1.0

1.6
10

Unit

mA

mW

°C
°C

Unit

mW/sr

−

V
µA
nm

−

nm

−

deg

−

µs

−

MHz

4.3±0.1

3.9±0.1

2.0

(2.54)

V

A

0.5

0.45

F

I

＝50mA

I

F

＝50mA

V

R

＝3V

I

F

＝50mA

I

F

＝50mA

I

F

＝50mA

F

I

＝50mA

F

＝50mA

4.4±0.1

0.5Max.

14Min.

1

Notes:

1. Tolerances are ±0.2 unless

0.1

±

otherwise indicated.

3.2

2. Value in parenthese is size

Cathode

Conditions

at base of leads.

0.4

4°±1°

2°±1°

0.53

0.4

2

Anode

Sensors

zElectrical and optical characteristic curves

50

mA)

(

F

40

30

20

10

FORWARD CURRENT : I

0

−20 0 40 60 8020 100
AMBIENT TEMPERATURE : Ta (

Fig.1 Forward current falloff

200

(%)

E

100

50

20

RELATIVE EMITTING I : I

10

0−25 25 10050 75

AMBIENT TEMPERATURE : Ta (°C)

Fig. 4 Relative emitting strength vs.

ambient temperature

°C)

50

(mA)

F

40

30

20

10

FORWARD CURRENT : I

Fig.2 Forward current vs. forward voltage

100

80

60

40

20

RELATIVE OPTICAL OUTPUT : PO (%)

10

−

25

°C

0

°C

25

°C

50

°C

75

°C

0

012

FORWARD VOLTAGE : V

F

(V)

8

(mW / Sr)

E

6

4

2

EMITTING STRENGTH I : I

0

0 1020304050

0
900 920 940 960 980 1000

OPTICAL WAVELENGTH : λ (nm)

Fig.5 Wavelength

SIM-20ST

FORWARD CURRENT : I

Fig.3 Emitting strength vs.

forward current

F

(mA)

0°

10°

20°

30°

40°

50°

60°

70°

80°

90°

RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : θ (

0

10° 20°80 60 40 20100 30° 40° 50° 60° 70° 80° 90°

100

80

60

40

20

RELATIVE EMITTING STRENGTH (%)

0

deg)

Fig. 6 Directional pattern

Rev.A 2/2