10V Drive Nch+Pch MOSFET
SH8M70
Structure Dimensions (Unit : mm)
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications Inner circuit
Type
SH8M70
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
2.0(TOTAL) 1.4(ELEMENT)
Limits
N-ch P-ch
250
30
±3.0
±12
1.0
12
−250
−20
±2.5
±10
−1.0
−10
150
−55 to +150
Unit
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
SOP8
Each lead has same dimensions
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(6) (5)
∗2
∗1
(3) (4)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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2010.06 - Rev.B
N-ch
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Forward voltage
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 μAVGS=±25V, VDS=0V
250 −−VI
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−25 μAV
2.0 − 4.0 V V
∗
−Ω
1.25 1.63 I
∗
0.75 I
fs
iss
oss
rss
∗
∗
tr
∗
∗
t
f
∗
g
∗
gs
∗
gd
−−S
−−pF V
180
−−pF V
70
−−pF f=1MHz
20
−−ns
10
−−ns
20
−−ns
20
−−ns
25
− nC
5.2
−−nC
2.1
−−nC
1.2
Min. Typ. Max.
∗
V
−−1.5 V IS=3A, VGS=0V
SD
−
Unit
D
D
D
I
D
V
R
R
VDD 125V
VGS=10V ID=3A
R
Unit
Conditions
=1mA, VGS=0V
=250V, VGS=0V
DS
=10V, ID=1mA
DS
=1.5A, VGS=10V
=1.5A, VDS=10V
=25V
DS
=0V
GS
=1.5A, VDD 125V
=10V
GS
=83Ω
L
=10Ω
G
=42Ω RG =10Ω
L
Conditions
Data Sheet SH8M70
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
P-ch
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Forward voltage
∗Pulsed
Min.−Typ. Max.
I
GSS
−250 −−V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−−25 μA
−2.0 −−4.0 V
∗
− 2.2 2.8 Ω
∗
1.0 −−S
fs
− 250 − pF
iss
− 4010− pF
oss
−
rss
∗
−
∗
−
t
r
∗
−
∗
−
t
f
∗
−
g
∗
−
gs
∗
−−nC
gd
Min. Typ. Max.
∗
V
−−−1.5 V IS=−2.5A, VGS=0V
SD
−±10 μA
− pF
9
− ns
15
− ns
30
− ns
20
− ns
8
− nC
2.5
− nC
2.8
Unit
V
=±15V, VDS=0V
GS
I
= −1mA, VGS=0V
D
V
= −250V, VGS=0V
DS
= −10V, ID= −1mA
V
DS
I
= −1.25A, VGS= −10V
D
I
= −1.25A, VDS= −10V
D
V
= −25V
DS
=0V
V
GS
f=1MHz
= −1.25A, VDD −125V
I
D
V
= −10V
GS
R
=100Ω
L
=10Ω
R
G
VDD −125V, ID= −2.5A
= −10V
V
GS
RL=50Ω, RG =10Ω
Unit
Data Sheet SH8M70
Conditions
Conditions
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
1000
0
Typical Capacitance : C (pF)
10000
0
Switching Time : t(ns)
Fig.2 Switching Characteristics
1000
0
Reverse Recovery Time : trr
s.
Reverse Drain Current
15
Gate Source Voltage : V
(V)
Fig.4 Dynamic Input Characteristics
10
Drain Current : I
(A)
10
e
F
Resistance vs.Gate-Source Voltage
10
.2
Source Current : I
(A)
0
Static Drain-Source On-State Resistance :
Resistance vs. Drain Current
3
0
Static Drain-Source On-State Resistance
e
N-ch
Electrical characteristic curves
Ciss
100
Coss
10
f=1MHz
V
GS
=0V
°C
Ta=25
Pulsed
1
0.01 0.1 1 10 100 100
Drain-Source Voltage : VDS(V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
GS
10
5
0
01234567
Total Gate Charge : Qg(nC)
VGS=0V
Pulsed
S
1
0.1
0 0.2 0.4 0.6 0.8 1 1
Source-Drain Voltage : VSD(V)
Fig.7 Source Current vs.
Source-Drain Voltage
Crss
Ta=-25
Ta=25
VDD=125V
D
=3A
I
Pulsed
°C
25
°C
75
°C
125
°C
°C
Ta=25
VDD=125V
GS
V
G
tr
R
Pulsed
1000
tf
td(off)
100
10
1
td(on)
0.01 0.1 1 1
Drain Current : ID(A)
VDS=10V
Pulsed
D
1
0.1
0.01
02486
Gate-Source Voltage : VGS (V)
Ta=-25
25
75
125
Fig.5 Typical Transfer
Characteristics
10
VGS=10V
Pulsed
1
Ta=125
75
25
-25
0.1
0.1 1 1
Fig.8 Static Drain-Source On-State
Drain Current : ID(A)
=10V
=10Ω
°C
°C
°C
°C
Data Sheet SH8M70
°C
100
(ns)
10
Ta=25
di/dt=100A/μs
VGS=0V
1
0.1 1 1
Reverse Drain Current : IDR(A)
Pulsed
Fig.3 Reverse Recovery Time v
Ta=25
9
8
7
6
5
°C
°C
°C
°C
4
3
1.5A
2
1
Static Drain-Source On-State Resistanc
0
0 5 10 15 20
ID=3A
Gate-Source Voltage : VGS(V)
Pulsed
ig.6 Static Drain-Source On-State
VGS=10V
Pulsed
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 15
ID=3.0A
1.5A
75 100 125
Temperature : Tch (°C)
Fig.9 Static Drain-Source On-State
Resistance vs. Channel Temperatur
°C
°C
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
10
0
Forward Transfer Admittance
e
5
0
Gate Threshold Voltage : V
(th)(V)
re
2
0
Drain Current : I
(A)
s
1000
0
Typical Capacitance : C (pF)
10000
0
Switching Time : t(ns)
Fig.2 Switching Characteristics
15
0
s
8
10
Fig.4 Typical Transfer Characteristics
10
0
Static Drain - Source On - State
10
.2
Source Current : -I
(A)
VDS=10V
Pulsed
1
Ta=-25
Crss
°C
25
°C
75
°C
75
°C
Ciss
Coss
Ta=-25
°C
25
°C
75
°C
125
°C
: |Yfs| (S)
0.1
0.01
0.01 0.1 1 1
Drain Current : ID(A)
Fig.10 Forward Transfer Admittanc
vs. Drain Current
P-ch
Electrical characteristic curves
100
10
f=1MHz
GS
=0V
V
°C
Ta=25
Pulsed
1
0.01 0.1 1 10 100 100
Drain-Source Voltage : -VDS(V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
VDS=-10V
Pulsed
1
0.1
Drain Current : -ID (A)
0.01
0246
Gate-Source Voltage : −VGS(V)
Data Sheet SH8M70
125
°C
°C
25
°C
75
°C
°C
VDS=10V
D
=1mA
I
4
GS
3
2
1
0
-50 -25 0 25 50 75 100 125 15
Channel Temperature : Tch (°C)
Fig.11 Gate Threshold Voltage
VGS=10V
9V
1.8
8V
1.6
1.4
D
1.2
1
0.8
0.6
0.4
0.2
0
024681
6V
7V
5V
4V
3V
Drain-Sourse Voltage : VDS (V)
Fig.12 Typical Output Characteristic
vs. Channel Temperatu
Ta=25°C
DD= −125V
V
GS= −10V
V
1000
tf
100
td(off)
td(on)
10
1
0.01 0.1 1 1
Drain Current : -ID (A)
R
Pulsed
tr
G=10Ω
(V)
GS
10
5
Ta=25
Gate Source Voltage : −V
0
01234567891
Total Gate Charge : Qg(nC)
VDD=−125V
I
D
=−2.5A
Pulsed
Fig.3 Dynamic Input Characteristic
9
8
7
6
5
4
3
Resistance
2
1
Ta=25
°C
Pulsed
0
0 5 10 15 2
Gate-Source Voltage : -VGS(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
ID=-2.5A
-1.25A
S
1
Ta=-25
VGS=0V
Pulsed
0.1
0 0.2 0.4 0.6 0.8 1 1
Source-Drain Voltage : -VSD(V)
Fig.6 Source Current vs.
Source-Drain Voltage
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0
Static Drain-Source On-State Resistance :
e
Resistance vs. Drain Current
10
0
Forward Transfer Admittance
e
5
0
Gate Threshold Voltage : -V
(V)
1000
0
Reverse Recovery Time : trr (ns)
.
5
0
Resistance vs.Channel Temperature
Static Drain-Source On-State
0
(X-1)
Drain Current : -I
(A)
10
1
VGS=10V
Pulsed
0.1
0.1 1 1
Fig.7 Static Drain-Source On-Stat
100
10
1
0.1 1 1
Fig.10 Reverse Recovery Time vs
Drain Current : -ID(A)
Reverse Drain Current : -IDR (A)
Reverse Drain Current
Ta=125
-25
Data Sheet SH8M70
VDS=10V
Pulsed
4
GS(th)
1
°C
75
°C
25
°C
°C
: |Yfs| (S)
0.1
0.01
0.01 0.1 1 1
Ta=-25
°C
25
°C
75
°C
125
°C
Drain Current : -ID(A)
Fig.8 Forward Transfer Admittanc
vs. Drain Current
VGS=10V
Pulsed
4
(Ω)
DS(on)
3
2
Resistance : R
1
0
-50 -25 0 25 50 75 100 125 15
Fig.11 Static Drain-Source On-State
ID=2.5A
1.25A
Temperature : Tch (°C)
3
2
1
VDS=10V
D=1mA
0
-50 -25 0 25 50 75 100 125 15
Channel Temperature : Tch: (°C)
I
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
2
1.8
VGS=-10V
1.6
1.4
D
1.2
1
0.8
0.6
0.4
0.2
0
-9V
-8V
02 6481
Drain-Sourse Voltage : -VDS(V)
-7V
-6V
TC=25
Single Pulsed
-5V
°C
-4V
(X-1)
Fig.12 Typical Output Characteristics
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2010 ROHM Co., Ltd. All rights reserved.
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it
%
%
V
V
Pulse Width
I
it
V
F
it
%
V
V
Fig.19 Gate Charge Measurement Circuit
S
Fig.20 Gate Charge Waveform
V
N-ch
Measurement circuit
G (Const.)
V
GS
R
G
D
I
D.U.T.
V
R
L
V
DD
Fig.13 Switching Time Measurement Circu
VGS
RG
D
I
D.U.T.
RL
VDD
DS
VDS
90%
10%
GS
DS
t
d(on)
10%
90%
t
t
r
t
on
Fig.14 Switching Waveforms
V
G
Q
g
GS
QgsQ
gd
d(off)
Data Sheet SH8M70
50%50%
10
90
t
r
t
off
Fig.15 Gate Charge Measurement Circu
P-ch
Measurement circuit
V
GS
R
G
D
I
D.U.T.
V
R
L
V
DD
ig.17 Switching Time Measurement Circu
V
I
G (Const.)
GS
R
G
D
I
D.U.T.
R
L
V
DD
DS
V
D
GS
DS
Charge
Fig.16 Gate Charge Waveform
Pulse Width
10%
50%
10% 10
90% 90%
t
d(on)
t
r
t
on
Fig.18 Switching Waveforms
V
G
g
Q
GS
Q
gs
Q
gd
t
d(off)
50%
90%
t
off
r
t
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Charge
2010.06 - Rev.B
Notes
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consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
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The Products are not designed or manufactured to be used with any equipment, device or
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may result in a direct threat to human life or create a risk of human injury (such as a medical
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R1010
A
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