ROHM SH8M70 Technical data

10V Drive Nch+Pch MOSFET
SH8M70
Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications Inner circuit
Type
SH8M70
Package Code Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage Gate-source voltage
Drain current Source current
(Body diode)
Continuous Pulsed Continuous
Pulsed Total power dissipation Channel temperature Storage temperature
1 Pw10μs, Duty cycle1%2 MOUNTED ON A CERAMIC BOARD.
Symbol
DSS GSS
D
DP
S
SP
D
1
12
2.0(TOTAL) 1.4(ELEMENT)
Limits
N-ch P-ch
250
30
±3.0
±12
1.0 12
250
20
±2.5
±10
1.0
10
150
55 to +150
Unit
VV VV AI AI AI AI
WP
°CTch °CTstg
SOP8
Each lead has same dimensions
(8) (7)
2
1
(1) (2)
1 ESD PROTECTION DIODE2 BODY DIODE
A protection diode is included between the gate and
the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
(6) (5)
2
1
(3) (4)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
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2010.06 - Rev.B
N-ch Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current Gate threshold voltage Static drain-source on-state
resistance
V
R
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol Forward voltage
Pulsed
Min.−Typ. Max.
I
GSS
−±10 μAVGS=±25V, VDS=0V
250 −−VI
I
DSS
GS (th)
DS (on)
Y
C
C C
t
d (on)
t
d (off)
Q
Q
Q
−−25 μAV
2.0 4.0 V V
−Ω
1.25 1.63 I
0.75 I
fs
iss oss rss
tr
t
f
g
gs
gd
−−S
−−pF V
180
−−pF V
70
−−pF f=1MHz
20
−−ns
10
−−ns
20
−−ns
20
−−ns
25
nC
5.2
−−nC
2.1
−−nC
1.2
Min. Typ. Max.
V
−−1.5 V IS=3A, VGS=0V
SD
Unit
D
D
D
I
D
V R R VDD 125V VGS=10V ID=3A R
Unit
Conditions
=1mA, VGS=0V
=250V, VGS=0V
DS
=10V, ID=1mA
DS
=1.5A, VGS=10V =1.5A, VDS=10V
=25V
DS
=0V
GS
=1.5A, VDD 125V
=10V
GS
=83Ω
L
=10Ω
G
=42Ω RG =10Ω
L
Conditions
Data Sheet SH8M70
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2010.06 - Rev.B
P-ch Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current Gate threshold voltage Static drain-source on-state
resistance
V
R
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol Forward voltage
Pulsed
Min.−Typ. Max.
I
GSS
250 −−V
I
DSS
GS (th)
DS (on)
Y
C
C C
t
d (on)
t
d (off)
Q
Q
Q
−−−25 μA
2.0 −−4.0 V
2.2 2.8 Ω
1.0 −−S
fs
250 pF
iss
4010− pF
oss
rss
t
r
t
f
g
gs
−−nC
gd
Min. Typ. Max.
V
−−−1.5 V IS=−2.5A, VGS=0V
SD
−±10 μA
pF
9
ns
15
ns
30
ns
20
ns
8
nC
2.5
nC
2.8
Unit
V
15V, VDS=0V
GS
I
= −1mA, VGS=0V
D
V
= −250V, VGS=0V
DS
= −10V, ID= −1mA
V
DS
I
= −1.25A, VGS= −10V
D
I
= −1.25A, VDS= −10V
D
V
= −25V
DS
=0V
V
GS
f=1MHz
= −1.25A, VDD 125V
I
D
V
= −10V
GS
R
=100Ω
L
=10Ω
R
G
VDD 125V, ID= −2.5A
= −10V
V
GS
RL=50Ω, RG =10Ω
Unit
Data Sheet SH8M70
Conditions
Conditions
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
1000
0
Typical Capacitance : C (pF)
10000
0
Switching Time : t(ns)
Fig.2 Switching Characteristics
1000
0
Reverse Recovery Time : trr
s.
Reverse Drain Current
15
Gate Source Voltage : V
(V)
Fig.4 Dynamic Input Characteristics
10
Drain Current : I
(A)
10
e
F
Resistance vs.Gate-Source Voltage
10
.2
Source Current : I
(A)
0
Static Drain-Source On-State Resistance :
Resistance vs. Drain Current
3
0
Static Drain-Source On-State Resistance
e
N-ch Electrical characteristic curves
Ciss
100
Coss
10
f=1MHz V
GS
=0V
°C
Ta=25 Pulsed
1
0.01 0.1 1 10 100 100
Drain-Source Voltage : VDS(V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
GS
10
5
0
01234567
Total Gate Charge : Qg(nC)
VGS=0V Pulsed
S
1
0.1
0 0.2 0.4 0.6 0.8 1 1
Source-Drain Voltage : VSD(V)
Fig.7 Source Current vs.
Source-Drain Voltage
Crss
Ta=-25
Ta=25 VDD=125V
D
=3A
I Pulsed
°C
25
°C
75
°C
125
°C
°C
Ta=25 VDD=125V
GS
V
G
tr
R Pulsed
1000
tf
td(off)
100
10
1
td(on)
0.01 0.1 1 1
Drain Current : ID(A)
VDS=10V Pulsed
D
1
0.1
0.01 02486
Gate-Source Voltage : VGS (V)
Ta=-25 25 75 125
Fig.5 Typical Transfer
Characteristics
10
VGS=10V Pulsed
1
Ta=125 75 25
-25
0.1
0.1 1 1
Fig.8 Static Drain-Source On-State
Drain Current : ID(A)
=10V
=10Ω
°C °C °C °C
Data Sheet SH8M70
°C
100
(ns)
10
Ta=25 di/dt=100A/μs VGS=0V
1
0.1 1 1
Reverse Drain Current : IDR(A)
Pulsed
Fig.3 Reverse Recovery Time v
Ta=25
9 8 7 6
5
°C °C °C °C
4 3
1.5A
2 1
Static Drain-Source On-State Resistanc
0
0 5 10 15 20
ID=3A
Gate-Source Voltage : VGS(V)
Pulsed
ig.6 Static Drain-Source On-State
VGS=10V Pulsed
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 15
ID=3.0A
1.5A
75 100 125
Temperature : Tch (°C)
Fig.9 Static Drain-Source On-State
Resistance vs. Channel Temperatur
°C
°C
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2010.06 - Rev.B
10
0
Forward Transfer Admittance
e
5
0
Gate Threshold Voltage : V
(th)(V)
re
2
0
Drain Current : I
(A)
s
1000
0
Typical Capacitance : C (pF)
10000
0
Switching Time : t(ns)
Fig.2 Switching Characteristics
15
0
s
8
10
Fig.4 Typical Transfer Characteristics
10
0
Static Drain - Source On - State
10
.2
Source Current : -I
(A)
VDS=10V Pulsed
1
Ta=-25
Crss
°C
25
°C
75
°C
75
°C
Ciss
Coss
Ta=-25
°C
25
°C
75
°C
125
°C
: |Yfs| (S)
0.1
0.01
0.01 0.1 1 1
Drain Current : ID(A)
Fig.10 Forward Transfer Admittanc
vs. Drain Current
P-ch Electrical characteristic curves
100
10
f=1MHz
GS
=0V
V
°C
Ta=25 Pulsed
1
0.01 0.1 1 10 100 100
Drain-Source Voltage : -VDS(V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
VDS=-10V Pulsed
1
0.1
Drain Current : -ID (A)
0.01 0246
Gate-Source Voltage : VGS(V)
Data Sheet SH8M70
125
°C
°C
25
°C
75
°C °C
VDS=10V
D
=1mA
I
4
GS
3
2
1
0
-50 -25 0 25 50 75 100 125 15
Channel Temperature : Tch (°C)
Fig.11 Gate Threshold Voltage
VGS=10V
9V
1.8 8V
1.6
1.4
D
1.2
1
0.8
0.6
0.4
0.2
0
024681
6V
7V
5V
4V
3V
Drain-Sourse Voltage : VDS (V)
Fig.12 Typical Output Characteristic
vs. Channel Temperatu
Ta=25°C
DD= 125V
V
GS= 10V
V
1000
tf
100
td(off)
td(on)
10
1
0.01 0.1 1 1
Drain Current : -ID (A)
R Pulsed
tr
G=10Ω
(V)
GS
10
5
Ta=25
Gate Source Voltage : −V
0
01234567891
Total Gate Charge : Qg(nC)
VDD=125V I
D
=2.5A
Pulsed
Fig.3 Dynamic Input Characteristic
9 8 7 6
5 4 3
Resistance
2 1
Ta=25
°C
Pulsed
0
0 5 10 15 2
Gate-Source Voltage : -VGS(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
ID=-2.5A
-1.25A
S
1
Ta=-25
VGS=0V Pulsed
0.1
0 0.2 0.4 0.6 0.8 1 1
Source-Drain Voltage : -VSD(V)
Fig.6 Source Current vs.
Source-Drain Voltage
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0
Static Drain-Source On-State Resistance :
e
Resistance vs. Drain Current
10
0
Forward Transfer Admittance
e
5
0
Gate Threshold Voltage : -V
(V)
1000
0
Reverse Recovery Time : trr (ns)
.
5
0
Resistance vs.Channel Temperature
Static Drain-Source On-State
0
(X-1)
Drain Current : -I
(A)
10
1
VGS=10V Pulsed
0.1
0.1 1 1
Fig.7 Static Drain-Source On-Stat
100
10
1
0.1 1 1
Fig.10 Reverse Recovery Time vs
Drain Current : -ID(A)
Reverse Drain Current : -IDR (A)
Reverse Drain Current
Ta=125
-25
Data Sheet SH8M70
VDS=10V Pulsed
4
GS(th)
1
°C
75
°C
25
°C °C
: |Yfs| (S)
0.1
0.01
0.01 0.1 1 1
Ta=-25
°C
25
°C
75
°C
125
°C
Drain Current : -ID(A)
Fig.8 Forward Transfer Admittanc
vs. Drain Current
VGS=10V Pulsed
4
(Ω)
DS(on)
3
2
Resistance : R
1
0
-50 -25 0 25 50 75 100 125 15
Fig.11 Static Drain-Source On-State
ID=2.5A
1.25A
Temperature : Tch (°C)
3
2
1
VDS=10V
D=1mA
0
-50 -25 0 25 50 75 100 125 15
Channel Temperature : Tch: (°C)
I
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
2
1.8
VGS=-10V
1.6
1.4
D
1.2 1
0.8
0.6
0.4
0.2 0
-9V
-8V
02 6481
Drain-Sourse Voltage : -VDS(V)
-7V
-6V
TC=25 Single Pulsed
-5V
°C
-4V
(X-1)
Fig.12 Typical Output Characteristics
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2010.06 - Rev.B
it
%
%
V V
Pulse Width
I
it
V
F
it
%
V
V
Fig.19 Gate Charge Measurement Circuit
S
Fig.20 Gate Charge Waveform
V
N-ch
Measurement circuit
G (Const.)
V
GS
R
G
D
I
D.U.T.
V
R
L
V
DD
Fig.13 Switching Time Measurement Circu
VGS
RG
D
I
D.U.T.
RL
VDD
DS
VDS
90%
10%
GS DS
t
d(on)
10%
90%
t
t
r
t
on
Fig.14 Switching Waveforms
V
G
Q
g
GS
QgsQ
gd
d(off)
Data Sheet SH8M70
50%50%
10
90
t
r
t
off
Fig.15 Gate Charge Measurement Circu
P-ch
Measurement circuit
V
GS
R
G
D
I
D.U.T.
V
R
L
V
DD
ig.17 Switching Time Measurement Circu
V
I
G (Const.)
GS
R
G
D
I
D.U.T.
R
L
V
DD
DS
V
D
GS
DS
Charge
Fig.16 Gate Charge Waveform
Pulse Width
10%
50%
10% 10
90% 90%
t
d(on)
t
r
t
on
Fig.18 Switching Waveforms
V
G
g
Q
GS
Q
gs
Q
gd
t
d(off)
50%
90%
t
off
r
t
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Charge
2010.06 - Rev.B
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
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Notice
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
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R1010
A
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