ROHM SH8M70 Technical data
10V Drive Nch+Pch MOSFET
SH8M70
Structure Dimensions (Unit : mm)
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications Inner circuit
Type
SH8M70
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
2.0(TOTAL) 1.4(ELEMENT)
Limits
N-ch P-ch
250
30
±3.0
±12
1.0
12
−250
−20
±2.5
±10
−1.0
−10
150
−55 to +150
Unit
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
SOP8
Each lead has same dimensions
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(6) (5)
∗2
∗1
(3) (4)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
N-ch
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Forward voltage
∗Pulsed
Min.−Typ. Max.
I
GSS
−±10 μAVGS=±25V, VDS=0V
250 −−VI
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−25 μAV
2.0 − 4.0 V V
∗
−Ω
1.25 1.63 I
∗
0.75 I
fs
iss
oss
rss
∗
∗
tr
∗
∗
t
f
∗
g
∗
gs
∗
gd
−−S
−−pF V
180
−−pF V
70
−−pF f=1MHz
20
−−ns
10
−−ns
20
−−ns
20
−−ns
25
− nC
5.2
−−nC
2.1
−−nC
1.2
Min. Typ. Max.
∗
V
−−1.5 V IS=3A, VGS=0V
SD
−
Unit
D
D
D
I
D
V
R
R
VDD 125V
VGS=10V ID=3A
R
Unit
Conditions
=1mA, VGS=0V
=250V, VGS=0V
DS
=10V, ID=1mA
DS
=1.5A, VGS=10V
=1.5A, VDS=10V
=25V
DS
=0V
GS
=1.5A, VDD 125V
=10V
GS
=83Ω
L
=10Ω
G
=42Ω RG =10Ω
L
Conditions
Data Sheet SH8M70
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
P-ch
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Forward voltage
∗Pulsed
Min.−Typ. Max.
I
GSS
−250 −−V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−−25 μA
−2.0 −−4.0 V
∗
− 2.2 2.8 Ω
∗
1.0 −−S
fs
− 250 − pF
iss
− 4010− pF
oss
−
rss
∗
−
∗
−
t
r
∗
−
∗
−
t
f
∗
−
g
∗
−
gs
∗
−−nC
gd
Min. Typ. Max.
∗
V
−−−1.5 V IS=−2.5A, VGS=0V
SD
−±10 μA
− pF
9
− ns
15
− ns
30
− ns
20
− ns
8
− nC
2.5
− nC
2.8
Unit
V
=±15V, VDS=0V
GS
I
= −1mA, VGS=0V
D
V
= −250V, VGS=0V
DS
= −10V, ID= −1mA
V
DS
I
= −1.25A, VGS= −10V
D
I
= −1.25A, VDS= −10V
D
V
= −25V
DS
=0V
V
GS
f=1MHz
= −1.25A, VDD −125V
I
D
V
= −10V
GS
R
=100Ω
L
=10Ω
R
G
VDD −125V, ID= −2.5A
= −10V
V
GS
RL=50Ω, RG =10Ω
Unit
Data Sheet SH8M70
Conditions
Conditions
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
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