ROHM SH8M41 Technical data

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4V Drive Nch + Pch MOSFET





(8) (7)

(1) (2)

(6) (5)

(3) (4)

SH8M41

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8M41 

 Absolute maximum ratings (Ta = 25C)

SymbolParameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I
Pulsed I

Continuous I

Pulsed I

Power dissipation

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Tr1 : N-ch Tr2 : P-ch

80 80 V

20 20 V

3.4 2.6 A

13.6

10.4 A

1.6 1.6 A

13.6 10.4 A

2

150

55 to +150

Unit

W / TOTAL

SOP8

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

(6)(7)(8)

(2) (3)

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

∗1

 Thermal resistance

Parameter Unit

Channel to Ambient Rth (ch-a) 62.5

*Mounted on a ceramic board.

Symbol Limits

*

1/8

C / W

2010.07 - Rev.A

Data Sheet

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SH8M41

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10AVGS=20V, VDS=0V

80 - - V ID=1mA, VGS=0V

--1AVDS=80V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 90 130 ID=3.4A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 110 150 ID=3.4A, VGS=4.5V

m

- 120 160 ID=3.4A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

- 600 - pF VDS=10V

- 100 - pF VGS=0V

- 40 - pF f=1MHz

- 12 - ns ID=1.7A, VDD 40V

*

*

- 15 - ns VGS=10V

*

*

r

- 40 - ns RL=24

*

*

- 12 - ns RG=10

*

*

f

- 6.6 9.2 nC ID=3.4A

*

*

g

- 1.8 - nC VDD 40V

*

*

gs

- 2.2 - nC VGS=5V

*

*

Forward transfer admittance l Yfs l3 - - SVDS=10V, ID=3.4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=6.4A, VGS=0V

Conditions

2/8

2010.07 - Rev.A

Data Sheet

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SH8M41

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

80 - - V ID=1mA, VGS=0V

- 1 AVDS=80V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

- 165 240 ID=2.6A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 220 300 ID=1.3A, VGS=4.5V

m

- 230 310 ID=1.3A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

=2.6A, VDS=10V

D

- 1000 - pF VDS=10V

- 90 - pF VGS=0V

- 40 - pF f=1MHz

- 14 - ns ID=1.3A, VDD 40V

*

*

- 12 - ns VGS=10V

*

*

r

- 60 - ns RL=31

*

*

- 20 - ns RG=10

*

*

f

- 8.2 11.5 nC ID=2.6A

*

*

g

- 2.5 - nC VDD 40V

*

*

gs

- 2.5 - nC VGS= 5V

*

*

Forward transfer admittance l Yfs l2 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=1.6A, VGS=0V

Conditions

3/8

2010.07 - Rev.A

Data Sheet

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SH8M41

V

[V]

C

V

[V]

 Electrical characteristic curves <Tr1(Nch)>

4

VGS= 10V

[A]

3

D

2

1

DRAIN CURRENT : I

0

1000

(on)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

VGS= 2.4V

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)

Ta=25°C
Pulsed

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= 4.5V

VGS= 4.0V

VGS= 3.0V

VGS= 2.6V

Ta=25°C
Pulsed

VGS=10V

VGS=4.5V

V

=4.0V

4

VGS= 10V

V

= 4.5V

[A]

D

DRAIN CURRENT : I

(on)[mΩ]

DS

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

GS

V

= 4.0V

3

GS

V

= 3.0V

GS

2

1

0

0246810

DRAIN-SOURCE VOLTAGE :

1000

VGS= 10V

Pulsed

100

10

0.1 1 10

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= 2.6V

VGS= 2.4V

DRAIN-CURRENT : ID[A]

Ta=25°C
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

VDS= 10V

Pulsed

[A]

1

D

URRENT : I

DRAIN

(on)[mΩ]

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

Ta= 125°C

Ta= 75°C
Ta= 25°C

0.1

Ta= - 25°C

0.01

0.001

01234

GATE-SOURCE VOLTAGE :

Fig.3 Typical Transfer Characteristics

1000

VGS= 4.5V

Pulsed

DS

100

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 4.0V

Pulsed

(on)[mΩ]

DS

100

Ta=125°C
Ta=75°C

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STATE

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta=25°C
Ta= -25°C

10

VDS= 10V

Pulsed

1

FORWARD TRANSFER

ADMITTANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

VGS=0V

Pulsed

1

0.1

REVERSE DRAIN CURRENT : Is [A]

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

4/8

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

500

400

(ON)[mΩ]

300

DS

200

100

RESISTANCE : R

0

STATIC DRAIN-SOURCE ON-STATE

0 5 10 15

GATE-SOURCE VOLTAGE : VGS[V]

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz
VGS=0V

1000

100

CAPACITANCE : C [pF]

Crss

10

0.01 0.1 1 10 100

ID= 1.7A

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Coss

ID= 3.4A

Ta=25°C
Pulsed

Ciss

10000

1000

SWITCHING TIME : t [ns]

100

10

1

td(off)

td(on)

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.11 Switching Characteristics

t

r

Ta=25°C
VDD=40V

t

f

VGS=10V

RG=10Ω

Pulsed

10

[V]

GS

8

6

4

2

GATE-SOURCE VOLTAGE : V

0

0 2 4 6 8 10 12 14

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD=40V

ID= 3.4A

RG=10Ω

Pulsed

5/8

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

V

[V]

DRAIN

CURRENT

I

[A]

]

]

 Electrical characteristic curves <Tr2(Pch)>

4

Ta=25°C
Pulsed

[A]

D

VGS= -10V

3

VGS=- 4.5V

VGS=- 4.0V

2

1

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)

1000

Ta= 25°C
Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -I[A

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= -3.0V

VGS= -2.6V

VGS= -2.4V

VGS=-10V

VGS= -4.5V

VGS= -4.0V

4

D

3

: -

2

1

0

0246810

1000

(on)[mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STATE

VGS= -10V

VGS= -4.5V

VGS= -4.0V

DRAIN-SOURCE VOLTAGE : -VDS[V]

VGS= -10V

Pulsed

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

Ta=25°C
Pulsed

VGS= -2.6V

VGS= -2.4V

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

VDS= -10V

Pulsed

[A]

1

Ta= 125°C

D

Ta= 75°C
Ta= 25°C

0.1

Ta= - 25°C

0.01

DRAIN CURRENT : -I

0.001

01234

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.3 Typical Transfer Characteristics

1000

VGS= -4.5V

Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -4.0V

Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STATE

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

VDS= -10V

Pulsed

1

FORWARD TRANSFER

ADMITTANCE : |Yfs| [S]

0.1

0.01 0.1 1 10

DRAIN-CURRENT : -I[A

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

VGS=0V

Pulsed

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

6/8

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

500

400

(ON)[mΩ]

DS

300

200

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0 5 10 15

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz
V

GS

1000

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

ID= -1.3A

GATE-SOURCE VOLTAGE : -VGS[V]

=0V

Crss

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Ta=25°C
Pulsed

ID= -2.6A

Ciss

Coss

10000

1000

SWITCHING TIME : t [ns]

100

10

1

td(off)

td(on)

0.01 0.1 1 10

Fig.11 Switching Characteristics

t

r

DRAIN-CURRENT : -ID[A]

t

f

Ta=25°C
VDD=-40V

VGS=-10V

RG=10Ω

Pulsed

10

[V]

GS

8

6

4

2

GATE-SOURCE VOLTAGE : -V

0

0 2 4 6 8 10121416

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD=-40V

ID= -2.6A

RG=10Ω

Pulsed

7/8

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

%

V
V

F

it

S

F

S

F

S

 Measurement circuits

<Tr1(Nch)>

V

GS

R

G

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

td(on)

90%

50%

90% 90

td(off)

tr

tf

ton toff

ig.1-1 Switching time measurement circu

V

GS

I

G(Const.)

D.U.T.

ig.2-1 Gate charge measurement circuit

<Tr2(Pch)>

V

GS

R

G

I

D.U.T.

D

Fig.1-2 Switching waveforms

V

G

D

I

V

D

R

L

V

GS

Q

g

Qgs Qgd

V

DD

Charge

Fig.2-2 Gate Charge Waveform

Pulse Width

V

GS

V

DS

R

L

V

DD

V

10%

50%

90%

50%

10% 10%

DS

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

Fig.1-1 Switching Time Measurement Circuit

Fig. 3-1

I

G(Const.)

D

V

I

GS

V

D

R

L

D.U.T.

V

DD

Fig.1-2 Switching Waveforms

Fig. 3-2

V

G

Q

g

V

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

Fig. 4-1

ig.2-1 Gate charge measurement circuit

Fig. 4-2

8/8

2010.07 - Rev.A

Notes

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consent of ROHM Co.,Ltd.

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The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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Notice

The Products specied in this document are intended to be used with general-use electronic
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Please be sure to implement in your equipment using the Products safety measures to guard
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R1010

A