ROHM SH8M41 Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

4V Drive Nch + Pch MOSFET





(8) (7)

(1) (2)

(6) (5)

(3) (4)

SH8M41

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8M41 

 Absolute maximum ratings (Ta = 25C)

SymbolParameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I
Pulsed I

Continuous I

Pulsed I

Power dissipation

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Tr1 : N-ch Tr2 : P-ch

80 80 V

20 20 V

3.4 2.6 A

13.6

10.4 A

1.6 1.6 A

13.6 10.4 A

2

150

55 to +150

Unit

W / TOTAL

SOP8

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

(6)(7)(8)

(2) (3)

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

∗1

 Thermal resistance

Parameter Unit

Channel to Ambient Rth (ch-a) 62.5

*Mounted on a ceramic board.

Symbol Limits

*

1/8

C / W

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10AVGS=20V, VDS=0V

80 - - V ID=1mA, VGS=0V

--1AVDS=80V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 90 130 ID=3.4A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 110 150 ID=3.4A, VGS=4.5V

m

- 120 160 ID=3.4A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

- 600 - pF VDS=10V

- 100 - pF VGS=0V

- 40 - pF f=1MHz

- 12 - ns ID=1.7A, VDD 40V

*

*

- 15 - ns VGS=10V

*

*

r

- 40 - ns RL=24

*

*

- 12 - ns RG=10

*

*

f

- 6.6 9.2 nC ID=3.4A

*

*

g

- 1.8 - nC VDD 40V

*

*

gs

- 2.2 - nC VGS=5V

*

*

Forward transfer admittance l Yfs l3 - - SVDS=10V, ID=3.4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=6.4A, VGS=0V

Conditions

2/8

2010.07 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

SH8M41

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

80 - - V ID=1mA, VGS=0V

- 1 AVDS=80V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

- 165 240 ID=2.6A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 220 300 ID=1.3A, VGS=4.5V

m

- 230 310 ID=1.3A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

=2.6A, VDS=10V

D

- 1000 - pF VDS=10V

- 90 - pF VGS=0V

- 40 - pF f=1MHz

- 14 - ns ID=1.3A, VDD 40V

*

*

- 12 - ns VGS=10V

*

*

r

- 60 - ns RL=31

*

*

- 20 - ns RG=10

*

*

f

- 8.2 11.5 nC ID=2.6A

*

*

g

- 2.5 - nC VDD 40V

*

*

gs

- 2.5 - nC VGS= 5V

*

*

Forward transfer admittance l Yfs l2 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=1.6A, VGS=0V

Conditions

3/8

2010.07 - Rev.A