ROHM SH8M24 Technical data
L
T
4V Drive Nch+Pch MOSFET
SH8M24
Structure Dimensions (Unit : mm)
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small surface mount package (SOP8).
Application
Switching
Packaging specifications Inner circuit
Type
SH8M24
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Tr1 : N-ch Tr2 : P-ch
±20
±4.5
∗1
±18
1.0
∗1
∗2
18
−55 to +150
Limits
−45
±20
±3.5
±14
−1.0
−14
2.0
1.4
150
Unit
V45
V
A
A
A
A
W / TOTA
W / ELEMEN
°C
°C
SOP8
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
Each lead has same dimensions
(6) (5)
∗2
∗1
(3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
N-ch
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state
resistance
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
∗ Pulsed
Min.
Typ. Max.
I
GSS
−−
45 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
−−1 μAVDS= 45V, VGS=0V
1.0 − 2.5 V VDS= 10V, ID= 1mAGate threshold voltage
− 33 46 I
∗
DS (on)
− 41 57 mΩ
− 46 64 I
∗
3.5 −−SV
Y
fs
C
C
C
d (on)
d (off)
Q
Q
Q
V
− 550 − pF VDS= 10V
iss
− 14070− pF VGS= 0V
oss
−
rss
∗
∗
r
t
∗
∗
t
f
∗
g
∗
gs
∗
gd
∗
SD
12
−
−
18
42
−
−
12
−
6.8
2.0
−
−−nC RL= 5.6Ω, RG= 10Ω
2.9
Min. Typ. Max.
−−1.2 V IS= 4.5A, VGS=0VForward voltage
±10 μAV
− pF f=1MHz
− ns
− ns
− ns
− ns
9.6 nC
− nC ID= 4.5A
Unit
mΩ
mΩ
Unit
D
I
D
D
V
ID= 2.5A
V
R
R
V
Conditions
= ±20V, VDS=0V
GS
= 4.5A, VGS= 10V
= 4.5A, VGS= 4.5V
= 4.5A, VGS= 4V
= 10V, ID= 4.5A
DS
DD
25V
GS
= 10V
L
= 10Ω
G
= 10Ω
25V, VGS= 5V
DD
Conditions
Data Sheet SH8M24
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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