ROHM SH8M24 Technical data

L
T
4V Drive Nch+Pch MOSFET
SH8M24
Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small surface mount package (SOP8).
Application
Switching
Packaging specifications Inner circuit
Type
SH8M24
Package Code Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage Gate-source voltage
Drain current Source current
(Body diode) Total power dissipation Channel temperature
Storage temperature
1 Pw10μs, Duty cycle1%2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Tr1 : N-ch Tr2 : P-ch
±20
±4.5
1
±18
1.0
1
2
18
55 to +150
Limits
45 ±20
±3.5
±14
1.0
14
2.0
1.4
150
Unit
V45 V A A A A
W / TOTA
W / ELEMEN
°C °C
SOP8
(8) (7)
2
1
(1) (2)
1 ESD protection diode2 Body diode
Each lead has same dimensions
(6) (5)
2
1
(3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
N-ch Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state resistance
R
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time
t Rise time Turn-off delay time
t Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Pulsed
Min.
Typ. Max.
I
GSS
−−
45 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
−−1 μAVDS= 45V, VGS=0V
1.0 2.5 V VDS= 10V, ID= 1mAGate threshold voltage
33 46 I
DS (on)
41 57 mΩ
46 64 I
3.5 −−SV
Y
fs
C
C C
d (on)
d (off)
Q
Q
Q
V
550 pF VDS= 10V
iss
14070− pF VGS= 0V
oss
rss
r
t
t
f
g
gs
gd
SD
12
18 42
12
6.8
2.0
−−nC RL= 5.6Ω, RG= 10Ω
2.9
Min. Typ. Max.
−−1.2 V IS= 4.5A, VGS=0VForward voltage
±10 μAV
pF f=1MHz
ns
ns
ns
ns
9.6 nC
nC ID= 4.5A
Unit
mΩ
mΩ
Unit
D
I
D D
V
ID= 2.5A V R R
V
Conditions
= ±20V, VDS=0V
GS
= 4.5A, VGS= 10V = 4.5A, VGS= 4.5V = 4.5A, VGS= 4V
= 10V, ID= 4.5A
DS
DD
25V
GS
= 10V
L
= 10Ω
G
= 10Ω
25V, VGS= 5V
DD
Conditions
Data Sheet SH8M24
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
P-ch Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state resistance
R
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
g
Min.
Typ. Max.
−−
±10 μAV
45 −−VID= −1mA, VGS=0V
−−−1 μAVDS= −45V, VGS=0V
1.0 −−2.5 V VDS= −10V, ID= −1mAGate threshold voltage
45 63 I
60 84 mΩ
66 92 I
4.5 −−SV
1700 pF VDS= −10V
200
13.0
−−nC RL= 7.1Ω, RG= 10Ω
pF VGS=0V
135
pF f=1MHz
ns
16
ns
17 70
ns
14
ns
18.2 nC
3.6
nC ID= −3.5A
4.7
Min. Typ. Max.
−−−1.2 V IS= 3.5A, VGS=0VForward voltage
Unit
GS
= 3.5A, VGS= 10V
mΩ
D
= 3.5A, VGS= 4.5V
I
D
= 3.5A, VGS= 4V
mΩ
D
DS
V
DD
ID= 2.0A
GS
V
L
=12.5Ω
R
G
=10Ω
R V
DD
Unit
Data Sheet SH8M24
Conditions
=±20V, VDS=0V
= 10V, ID= 3.5A
25V
= 10V
−25V, VGS= −5V
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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