ROHM SH8M14 Technical data

Data Sheet





(8) (7)

(1) (2)

(6) (5)

(3) (4)

4V Drive Nch + Pch MOSFET

SH8M14

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).

SOP8

(8) (5)

(1)

(4)

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8M14 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Tr1 : N-ch Tr2 : P-ch

Unit

30 30 V

20 20 V

9 7A

36 28 A

1.6

1.6 A

36 28 A

2.0

1.4

W / TOTAL

W / ELEMENT

150

55 to 150

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

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1/10

2011.06 - Rev.A

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Data Sheet

SH8M14

 Electrical characteristics (Ta = 25 C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

*

DS (on)

--10 AVGS=±20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-1521 I

-1825 I

m

ConditionsParameter

=9A, VGS=10V

D

=9A, VGS=4.5V

D

20 28 ID=9A, VGS=4V

Forward transfer admittance l Yfs l 5.0 - - S VDS=10V, ID=9A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

d(off)

gd

*

- 630 - pF VDS=10V

- 230 - pF VGS=0V

- 110 - pF f=1MHz

- 10 - ns ID=4.5A, VDD 15V

*

- 33 - ns VGS=10V

*

r

- 42 - ns RL=3.3

*

- 10 - ns RG=10

*

f

- 8.5 - nC ID=9A, VDD 15V

*

g

- 2.3 - nC VGS=5V

*

gs

- 4.0 - nC

*

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=9A, VGS=0V

2/10

2011.06 - Rev.A

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Data Sheet

SH8M14

 Electrical characteristics (Ta = 25 C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

- 21.5 29.0 ID=7A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 29.0 39.0 ID=3.5A, VGS=4.5V

m

- 31.0 40.8 ID=3.5A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 1200 - pF VDS=10V

- 170 - pF VGS=0V

- 170 - pF f=1MHz

- 12 - ns ID=3.5A, VDD 15V

*

*

- 40 - ns VGS=10V

*

*

r

- 80 - ns RL=4.27

*

*

- 65 - ns RG=10

*

*

f

- 18 - nC ID=7A, VDD 15V

*

*

g

- 3.5 - nC VGS=5V

*

*

gs

- 6.5 - nC

*

*

Forward transfer admittance l Yfs l 6.0 - - S VDS=10V, ID=7A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=7A, VGS=0V

Conditions

3/10

2011.06 - Rev.A

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Data Sheet

SH8M14

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

4

5

6

7

8

9

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

Ta=25°C
Pulsed

0

1

2

3

4

5

6

7

8

9

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

Ta=25°C
Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25°C
Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

4/10

2011.06 - Rev.A