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SH8M13
Datasheet (ROHM)
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Datasheet SH8M13 Datasheet (ROHM)

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Page 1
Data Sheet
(8) (7)
(1) (2)
(6) (5)
(3) (4)
4V Drive Nch + Pch MOSFET
SH8M13
Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
SOP8
(8) (5)
(1)
(4)
Application
Switching
Packaging specifications
Package Taping
Type
Code TB Basic ordering unit (pieces) 2500
SH8M13
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current (Body Diode)
Continuous I
Pulsed I Continuous I
Pulsed I
Total power dissipation
Symbol
DSS
GSS
D
*1
DP
s
sp
P
D
*1
*2
Channel temperature Tch C Range of storage temperature Tstg C
*1 Pw10s, Duty cycle 1%
*2 Mounted on a ceramic board.
Limits
Tr1 : N-ch Tr2 : P-ch
30 30 V
±20 ±20 V
6.0 7.0 A
24 28 A
1.6 1.6 A
24 28 A
2.0
1.4
150
55 to 150
Unit
W / TOTAL
W / ELEMENT
Inner circuit
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗2
∗2
∗1
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗1
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1/10
2011.05 - Rev.A
Page 2
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Data Sheet
SH8M13
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
d(on)
d(off)
fs
iss
oss
rss
r
f
g
gs
gd
ConditionsParameter
- - ±10 AVGS=±20V, VDS=0V
30 - - V ID=1mA, VGS=0V
--1AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
-2231 I
*
-3042 I
-3549 I
*
l 2.5 - - S VDS=10V, ID=6.0A
=6.0A, VGS=10V
D
m
=6.0A, VGS=4.5V
D
=6.0A, VGS=4.0V
D
- 350 - pF VDS=10V
- 160 - pF VGS=0V
- 65 - pF f=1MHz
-8-nsI
*
*
- 16 - ns VGS=10V
*
*
- 30 - ns RL=5
*
*
*
*
-7-nsR
*
*
- 5.0 - nC ID=6.0A
*
*
- 1.4 - nC VDD 15V
- 1.9 - nC VGS=5V
*
*
=3.0A, VDD 15V
D
=10
G
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=6.0A, VGS=0V
2/10
2011.05 - Rev.A
Page 3
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Data Sheet
SH8M13
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter Conditions
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
- - ±10 AVGS=±20V, VDS=0V
30 - - V ID=1mA, VGS=0V
- 1 AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
- 21.5 29.0 I
*
- 29.0 39.0 I
- 31.0 40.8 I
*
l 6.0 - - S ID=7.0A, VDS=10V
=7.0A, VGS=10V
D
m
=3.5A, VGS=4.5V
D
=3.5A, VGS=4.0V
D
- 1200 - pF VDS=10V
- 170 - pF VGS=0V
- 170 - pF f=1MHz
- 12 - ns ID=3.5A, VDD 15V
*
*
- 40 - ns VGS=10V
*
*
- 80 - ns RL=4.29
*
*
*
*
- 65 - ns RG=10
*
*
-18 nCI
*
*
- 3.5 - nC VDD 15V
- 6.5 - nC VGS=5V
*
*
=7.0A
D
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
--1.2 V Is=7.0A, VGS=0V
Conditions
3/10
2011.05 - Rev.A
Page 4
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Data Sheet
SH8M13
Electrical characteristic curves (Ta=25C)
〈Tr.1(Nch)〉
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
VGS= 3.0V
V
GS
= 10V
V
GS
= 4.5
V
V
GS
= 4.0
V
VGS= 2.5V
Ta=25°C Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
0
1
2
3
4
5
6
0 2 4 6 8 10
VGS= 2.5V
VGS= 3.0V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.001
0.01
0.1
1
10
0 1 2 3
V
DS
= 10V
Pulsed
Ta=125°C
Ta=75°C Ta=25°C
Ta=-25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
1
10
100
1000
0.01 0.1 1 10
V
GS
= 4.0
V
V
GS
= 4.5
V
VGS= 10V
.
Ta=25°C
Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
1000
0.1 1 10
V
GS
= 10V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
1000
0.1 1 10
V
GS
= 4.5
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
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2011.05 - Rev.A
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Data Sheet
SH8M13
1
10
100
1000
0.1 1 10
V
GS
= 4.0V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
0.1
1
10
0.01 0.1 1 10
V
DS
= 10V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : ID[A]
0.01
0.1
1
10
0 0.5 1 1.5
V
GS
=0V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
SOURCE CURRENT : Is [A]
SOURCE-DRAIN VOLTAGE : VSD [V]
0
25
50
75
100
0 2 4 6 8 10
ID= 6.0A
ID= 3.0A
Ta=25°C Pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
GATE-SOURCE VOLTAGE : VGS[V]
1
10
100
1000
0.01 0.1 1 10
t
f
t
d(on)
t
d(off)
T
a
=25°C
V
DD
=15V
V
GS
=10V
R
G
=10W
Pulsed
t
r
Fig.11 Switching Characteristics
SWITCHING TIME : t [ns]
DRAIN-CURRENT : ID[A]
0
2
4
6
8
10
0 2 4 6 8 10
Ta=25°C V
DD
= 15V
I
D
= 6.0A
R
G
=10W
Pulsed
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
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2011.05 - Rev.A
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Data Sheet
SH8M13
10
100
1000
10000
0.01 0.1 1 10 100
C
iss
C
rss
T
a
=25°C
f=
1MHz
VGS=0V
C
oss
Fig.13 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS[V]
CAPACITANCE : C [pF]
0.01
0.1
1
10
100
0.1 1 10 100
PW = 10ms
DC operation
Operation in this area is limited by R
DS(ON)
(VGS=10V)
PW=100us
PW=1ms
Ta=25°C Single Pulse : 1Unit
Mounted on a ceramic board. (30mm × 30mm × 0.8mm)
Fig.14 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
(A)
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth
(ch-a)
=89.3°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
Ta=25°C Single Pulse : 1Unit
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
6/10
2011.05 - Rev.A
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Data Sheet
SH8M13
〈Tr.2(Pch)〉
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
VGS=-2.5V
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-4.0V
VGS=-3.0V
Ta=25°C Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -VDS[V]
0
1
2
3
4
5
6
7
0 2 4 6 8 10
VGS=-2.5V
VGS=-3.0V
V
GS
=-10V
V
GS
=-4.5V
VGS=-4.0V
Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN CURRENT : -I
D
[A]
0.001
0.01
0.1
1
10
100
0 1 2 3
V
DS
=-10V
Pulsed
Ta= 125°C
Ta= 75°C Ta= 25°C
Ta= - 25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
100
1000
0.1 1 10
V
GS
=-
4.0V
V
GS
=-
4.5V
VGS=-10V
Ta=25°C Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
1000
0.1 1 10
V
GS
= -
10V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
1000
0.1 1 10
V
GS
= -
4.5V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
7/10
2011.05 - Rev.A
Page 8
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Data Sheet
SH8M13
1
10
100
1000
0.1 1 10
V
GS
= -
4.0V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
0.1
1
10
100
0.01 0.1 1 10
V
DS
=-10V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -ID[A]
0.01
0.1
1
10
100
0 0.5 1 1.5
V
GS
=0V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
SOURCE CURRENT : -I
s
[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
0
20
40
60
80
100
0 5 10 15
ID= -7.0A
ID= -3.5A
Ta=25°C Pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
100
1000
10000
0.01 0.1 1 10
t
f
t
d(on)
t
d(off)
T
a
=25°C
V
DD
=-15V
V
GS
=-10V
R
G
=10W
Pulsed
t
r
Fig.11 Switching Characteristics
SWITCHING TIME : t [ns]
DRAIN-CURRENT : -ID[A]
0
2
4
6
8
10
0 10 20 30
T
a
=25°C
V
DD
= -15V
I
D
= -7.0A
R
G
=10W
Pulsed
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : -V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
8/10
2011.05 - Rev.A
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Data Sheet
SH8M13
10
100
1000
10000
0.01 0.1 1 10 100
C
iss
C
oss
C
rss
Ta=25°C f=1MHz
VGS=0V
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -VDS[V]
CAPACITANCE : C [pF]
0.01
0.1
1
10
100
1000
0.1 1 10 100
PW = 10ms
DC operation
Operation in this area is limited by R
DS(ON)
(V
GS
=-10V)
PW=100us
PW=1ms
Ta=25°C Single Pulse : 1Unit
Mounted on a ceramic board. (30mm × 30mm × 0.8mm)
Fig.14 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN CURRENT : -I
D
(A)
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth
(ch-a)
=89.3°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
Ta=25°C Single Pulse : 1Unit
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
9/10
2011.05 - Rev.A
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Data Sheet
SH8M13
S
%
V V
V
S
V
V
V
S
Measurement circuits
<Tr1(Nch)>
V
GS
R
G
D.U.T.
Pulse width
D
I
V
D
R
L
V
DD
50%
10%
GS DS
10% 10%
t
d(on)
t
on
90%
50%
90% 90
t
d(off)
t
r
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
V
I
G(Const.)
GS
D.U.T.
D
I
Fig.2-1 Gate Charge Measurement Circuit
<Tr2(Pch)>
V
GS
R
G
I
D.U.T.
D
R
V
Fig.1-2　Switching Waveforms
V
G
V
D
R
L
V
DD
GS
QgsQ
Q
g
gd
Charge
Fig.2-2 Gate Charge Waveform
Pulse Width
GS
V
DS
L
DD
10%
50%
90%
50%
10% 10%
DS
90% 90%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Fig.3-1 Switching Time Measurement Circuit
D
I
G(Const.)
V
I
GS
D.U.T.
V
D
R
L
V
DD
Fig.3-2　Switching Waveforms
V
G
Q
g
GS
QgsQ
gd
Charge
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
10/10
2011.05 - Rev.A
Page 11
Notes
Notice
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