ROHM SH8M12 Technical data

4V Drive Nch + Pch MOSFET





(8) (7)

(1) (2)

(6) (5)

(3) (4)

SH8M12

Data Sheet

 Structure

Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8M12 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Tr1 : N-ch Tr2 : P-ch

30 30 V

20 20 V

5 4.5 A

20 18 A

1.6

1.6 A

20 18 A

2.0

1.4

150

55 to 150

Unit

W / TOTAL

W / ELEMENT

Dimensions (Unit : mm)

SOP8

(8) (5)

(1)

(4)

Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

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Data Sheet

SH8M12

 Electrical characteristics (Ta = 25 C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=±20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3042 I

*

-4056 I

m

ConditionsParameter

=5A, VGS=10V

D

=5A, VGS=4.5V

D

45 63 ID=5A, VGS=4V

Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

d(off)

gd

*

- 250 - pF VDS=10V

- 90 - pF VGS=0V

- 45 - pF f=1MHz

-6-nsI

*

- 27 - ns VGS=10V

*

r

- 26 - ns RL=6

*

-5-nsR

*

f

- 4.0 - nC ID=5A, VDD 15V

*

g

- 1.2 - nC VGS=5V

*

gs

- 1.2 - nC

*

=2.5A, VDD 15V

D

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=5A, VGS=0V

2/10

2011.05 - Rev.A

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Data Sheet

SH8M12

 Electrical characteristics (Ta = 25 C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l 3.5 - - S VDS=10V, ID=4.5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-4056 I

*

R

DS (on)

-5577 I

m

-6084 I

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 800 - pF VDS=10V

- 120 - pF VGS=0V

- 110 - pF f=1MHz

-7-nsI

*

*

- 15 - ns VGS=10V

*

*

- 70 - ns RL=6

*

*

- 50 - ns RG=10

*

*

- 8.0 - nC ID=4.5A, VDD 15V

*

*

- 2.5 - nC VGS=5V

*

*

- 3.0 - nC

*

*

=4.5A, VGS=10V

D

=2.5A, VGS=4.5V

D

=2.5A, VGS=4.0V

D

=2.5A, VDD 15V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=4.5A, VGS=0V

Conditions

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Data Sheet

SH8M12

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

VGS= 2.0V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 3.0V

VGS= 2.5V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

1

2

3

4

5

0 2 4 6 8 10

VGS= 2.0V

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 2.8V

Ta=25°C
Pulsed

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

1000

0.1 1 10

.

VGS= 4.0V
VGS= 4.5V
V

GS

= 10V

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

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2011.05 - Rev.A