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SH8M11
Technical data
11 pgs1.33 Mb0

ROHM SH8M11 Technical data

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Data Sheet
t
(8) (7)
(1) (2)
(6) (5)
(3) (4)
4V Drive Nch + Pch MOSFET
SH8M11
Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
SOP8
(8) (5)
(1)
(4)
Application
Switching
Packaging specifications
Package Taping
Type
Code TB Basic ordering unit (pieces) 2500
SH8M11
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current (Body Diode)
Continuous I
Pulsed I Continuous I
Pulsed I
Power dissipation
Symbol
DSS
GSS
D
DP
s
sp
P
D
*1
*1
*2
Channel temperature Tch C Range of storage temperature Tstg C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Limits
Tr1 : N-ch Tr2 : P-ch
30 30 V
20 20 V
3.5 3.5 A
14 12 A
1.6
1.6 A
14 12 A
2.0
1.4
W / ELEMENT
150
55 to +150
Unit
W / TOTAL
Inner circui
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗2
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗2
∗1
∗1
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1/10
2011.10 - Rev.A
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Data Sheet
SH8M11
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state resistance
R
GSS
(BR)DSS
DSS
GS (th)
DS (on)
--10 AVGS=±20V, VDS=0V
30 - - V ID=1mA, VGS=0V
--1AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
-7098 I
*
- 90 126 ID=3.5A, VGS=4.5V
m
ConditionsParameter
=3.5A, VGS=10V
D
100 140 ID=3.5A, VGS=4V
Forward transfer admittance l Yfs l 1.5 - - S VDS=10V, ID=3.5A
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
iss
oss
rss
d(on)
d(off)
gd
*
- 85 - pF VDS=10V
- 40 - pF VGS=0V
- 20 - pF f=1MHz
-4-nsI
*
-8-nsV
*
r
- 18 - ns RL=8.8
*
-3-nsR
*
f
- 1.9 - nC ID=3.5A, VDD 15V
*
g
- 0.8 - nC VGS=5V
*
gs
- 0.4 - nC
*
=1.7A, VDD 15V
D
=10V
GS
=10
G
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=3.5A, VGS=0V
2/10
2011.10 - Rev.A
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Data Sheet
SH8M11
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter Conditions
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state resistance
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
30 - - V ID=1mA, VGS=0V
- 1 AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
-7098 I
*
R
DS (on)
- 100 140 ID=1.7A, VGS=4.5V
m
=3.5A, VGS=10V
D
- 110 155 ID=1.7A, VGS=4.0V
iss
oss
rss
d(on)
d(off)
gd
*
- 410 - pF VDS=10V
- 55 - pF VGS=0V
- 55 - pF f=1MHz
-9-nsI
*
*
- 18 - ns VGS=10V
*
*
r
- 35 - ns RL=8.8
*
*
- 12 - ns RG=10
*
*
f
- 4.2 - nC ID=3.5A, VDD 15V
*
*
g
- 1.7 - nC VGS=5V
*
*
gs
- 1.1 - nC
*
*
=1.7A, VDD 15V
D
Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=3.5A
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
--1.2 V Is=3.5A, VGS=0V
Conditions
3/10
2011.10 - Rev.A
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Data Sheet
SH8M11
Electrical characteristic curves (Ta=25C)
〈Tr.1(Nch)〉
0
0.5
1
1.5
2
2.5
3
3.5
0 0.2 0.4 0.6 0.8 1
VGS= 2.5V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
VGS= 2.8V
Ta=25°C Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
0
0.5
1
1.5
2
2.5
3
3.5
0 2 4 6 8 10
V
GS
= 10V
V
GS
= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 2.8V
Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.001
0.01
0.1
1
10
0 1 2 3
V
DS
= 10
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
10
100
1000
0.1 1 10
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
.
Ta=25°C Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
10
100
1000
0.1 1 10
V
GS
= 10
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
10
100
1000
0.1 1 10
V
GS
= 4.5
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
4/10
2011.10 - Rev.A
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Data Sheet
SH8M11
10
100
1000
0.1 1 10
V
GS
= 4.0
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
0.1
1
10
0.01 0.1 1 10
V
DS
= 10
V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : ID[A]
0.01
0.1
1
10
0 0.5 1 1.5
V
GS
=0V
Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
SOURCE CURRENT : Is [A]
SOURCE-DRAIN VOLTAGE : VSD [V]
0
50
100
150
200
0 2 4 6 8 10
ID= 3.5A
ID= 1.75A
Ta=25°C Pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
GATE-SOURCE VOLTAGE : VGS[V]
1
10
100
1000
0.01 0.1 1 10
t
f
t
d(on)
t
d(off)
Ta=25°
C
V
DD
= 15V
V
GS
=10V
R
G
=10Ω
Pulsed
t
r
Fig.11 Switching Characteristics
SWITCHING TIME : t [ns]
DRAIN-CURRENT : ID[A]
0
2
4
6
8
10
0 1 2 3 4 5
Ta=25°C V
DD
= 15V
I
D
= 3.5A
Pulsed
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
5/10
2011.10 - Rev.A
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Data Sheet
SH8M11
1
10
100
1000
0.01 0.1 1 10 100
C
iss
C
rss
Ta=25°C f=
1MHz
VGS=0V
C
oss
Fig.13 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS[V]
CAPACITANCE : C [pF]
0.01
0.1
1
10
100
0.1 1 10 100
PW = 10ms
Ta = 25°
C
Single Pulse :
1Unit
MOUNTED ON CERAMIC BOARD
DC operation
Operation in this area is limited by R
DS(ON)
(V
GS
=10V)
P
W
=100us
P
W
=1ms
Fig.14 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
(A)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W <Mounted on a CERAMIC board>
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
6/10
2011.10 - Rev.A
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Data Sheet
SH8M11
〈Tr.2(Pch)〉
0
1
2
3
0 0.2 0.4 0.6 0.8 1
VGS= -2.5V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
VGS= -2.8V
VGS= -3.0V
Ta=25°C Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -VDS[V]
0
1
2
3
0 2 4 6 8 10
VGS= -2.5V
VGS= -3.0V
VGS= -2.8V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN CURRENT : -I
D
[A]
0.001
0.01
0.1
1
10
0 1 2 3
V
DS
= -
10V
Pulsed
Ta= 125°C
Ta= 75°C Ta= 25°C
Ta= - 25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -VGS[V]
10
100
1000
0.1 1 10
V
GS
= -4.0V
V
GS
= -4.5V
VGS= -10V
Ta=25°C Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
10
100
1000
0.1 1 10
V
GS
= -
10V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
10
100
1000
0.1 1 10
V
GS
= -
4.5V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
7/10
2011.10 - Rev.A
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Data Sheet
SH8M11
10
100
1000
0.1 1 10
V
GS
= -
4.0V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= -10V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -ID[A]
0.01
0.1
1
10
0 0.5 1 1.5
V
GS
=0V
Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
SOURCE CURRENT : -I
s
[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
0
50
100
150
200
250
0 5 10 15
ID= -1.7A
ID= -3.5A
Ta=25°C Pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
100
1000
0.01 0.1 1 10
t
f
t
d(on)
t
d(off)
T
a
=25°C
V
DD
= -15V
V
GS
= -10V
R
G
=10Ω
Pulsed
t
r
Fig.11 Switching Characteristics
SWITCHING TIME : t [ns]
DRAIN-CURRENT : -ID[A]
0
2
4
6
8
10
0 2 4 6 8 10
T
a
=25°C
V
DD
= -
15V
I
D
= -3.5A
R
G
=10Ω
Pulsed
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : -V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
8/10
2011.10 - Rev.A
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Data Sheet
SH8M11
0.01
0.1
1
10
100
0.1 1 10 100
PW = 10ms
T
a
= 25°C
Single Pulse : 1Unit Mounted on a CERAMIC board
DC operation
Operation in this area is limited by R
DS(ON)
(V
GS
=-10V)
PW=100us
PW=1ms
Fig.14 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN CURRENT : -I
D
(A)
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 82.3 °C/W <Mounted on a CERAMIC
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
100
1000
10000
0.01 0.1 1 10 100
CAPACITANCE : C [pF]
DRAIN-SOURCE VOLTAGE : -VDS [V]
Fig.13 Typical Capacitance vs. Drain-Source Voltage
C
iss
C
oss
C
rss
Ta=25°C f=1MHz
VGS=0V
9/10
2011.10 - Rev.A
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Data Sheet
SH8M11
S
%
V V
V
S
V
V
V
S
Measurement circuits
<Tr1(Nch)>
V
GS
R
G
D.U.T.
Pulse width
D
I
V
D
R
L
V
DD
50%
10%
GS DS
10% 10%
t
d(on)
t
on
90%
50%
90% 90
t
d(off)
t
r
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
D.U.T.
D
I
Fig.2-1 Gate Charge Measurement Circuit
<Tr2(Pch)>
V
GS
R
G
I
D.U.T.
D
R
V
Fig.1-2　Switching Waveforms
V
G
VD
RL
GS
VDD
QgsQ
Q
g
gd
Charge
Fig.2-2 Gate Charge Waveform
Pulse Width
GS
V
DS
L
DD
10%
50%
90%
50%
10% 10%
DS
90% 90%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Fig.3-1 Switching Time Measurement Circuit
D
I
G(Const.)
V
I
GS
D.U.T.
V
D
R
L
V
DD
Fig.3-2　Switching Waveforms
V
G
Q
g
GS
QgsQ
gd
Charge
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
10/10
2011.10 - Rev.A
Notes
Notice
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