ROHM SH8M11 Technical data

Data Sheet

t



(8) (7)

(1) (2)

(6) (5)

(3) (4)

4V Drive Nch + Pch MOSFET

SH8M11

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).

SOP8

(8) (5)

(1)

(4)

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8M11 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Tr1 : N-ch Tr2 : P-ch

30 30 V

20 20 V

3.5 3.5 A

14 12 A

1.6

1.6 A

14 12 A

2.0

1.4

W / ELEMENT

150

55 to +150

Unit

W / TOTAL

 Inner circui

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

∗1

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1/10

2011.10 - Rev.A

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Data Sheet

SH8M11

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=±20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-7098 I

*

- 90 126 ID=3.5A, VGS=4.5V

m

ConditionsParameter

=3.5A, VGS=10V

D

100 140 ID=3.5A, VGS=4V

Forward transfer admittance l Yfs l 1.5 - - S VDS=10V, ID=3.5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

d(off)

gd

*

- 85 - pF VDS=10V

- 40 - pF VGS=0V

- 20 - pF f=1MHz

-4-nsI

*

-8-nsV

*

r

- 18 - ns RL=8.8

*

-3-nsR

*

f

- 1.9 - nC ID=3.5A, VDD 15V

*

g

- 0.8 - nC VGS=5V

*

gs

- 0.4 - nC

*

=1.7A, VDD 15V

D

=10V

GS

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3.5A, VGS=0V

2/10

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SH8M11

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-7098 I

*

R

DS (on)

- 100 140 ID=1.7A, VGS=4.5V

m

=3.5A, VGS=10V

D

- 110 155 ID=1.7A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 410 - pF VDS=10V

- 55 - pF VGS=0V

- 55 - pF f=1MHz

-9-nsI

*

*

- 18 - ns VGS=10V

*

*

r

- 35 - ns RL=8.8

*

*

- 12 - ns RG=10

*

*

f

- 4.2 - nC ID=3.5A, VDD 15V

*

*

g

- 1.7 - nC VGS=5V

*

*

gs

- 1.1 - nC

*

*

=1.7A, VDD 15V

D

Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=3.5A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=3.5A, VGS=0V

Conditions

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2011.10 - Rev.A

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Data Sheet

SH8M11

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

0.5

1

1.5

2

2.5

3

3.5

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

0.5

1

1.5

2

2.5

3

3.5

0 2 4 6 8 10

V

GS

= 10V

V

GS

= 4.5V

VGS= 4.0V

VGS= 2.5V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3

V

DS

= 10

V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

1000

0.1 1 10

V

GS

= 4.0V

V

GS

= 4.5V

V

GS

= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 10

V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 4.5

V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

4/10

2011.10 - Rev.A