ROHM SH8K12 Technical data

Data Sheet

(8) (7)

(1) (2)

(6) (5)

(3) (4)

4V Drive Nch + Nch MOSFET

SH8K12

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8K12 ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

30 V

20 V

5.0 A

20 A

1.6 A

20 A

2.0 W / TOTAL

1.4 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(8) (5)

(1)

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

(4)

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

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1/6

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Data Sheet

SH8K12

 Electrical characteristics (Ta = 25 C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3042 I

Static drain-source on-state
resistance

R

DS (on)

*

-4056 I

m

-4563 I

iss

oss

rss

d(on)

d(off)

gd

*

- 250 - pF VDS=10V

- 90 - pF VGS=0V

- 45 - pF f=1MHz

-6-nsI

*

*

- 27 - ns VGS=10V

*

*

r

- 26 - ns RL=6

*

*

-5-nsR

*

*

f

- 4.0 - nC ID=5.0A, VDD 15V

*

*

g

- 1.2 - nC VGS=5V

*

*

gs

- 1.2 - nC

*

*

Forward transfer admittance l Yfs l 2.5 - - S ID=5.0A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=5.0A, VGS=10V

D

=5.0A, VGS=4.5V

D

=5.0A, VGS=4.0V

D

=2.5A, VDD 15V

D

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=5.0A, VGS=0V

Conditions

2/6

2011.02 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

SH8K12

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

VGS= 2.0V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 3.0V

VGS= 2.5V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

1

2

3

4

5

0 2 4 6 8 10

VGS= 2.0V

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 2.8V

Ta=25°C
Pulsed

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

1000

0.1 1 10

.

VGS= 4.0V
VGS= 4.5V
V

GS

= 10V

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

3/6

2011.02 - Rev.A