Datasheet SH8K11 Datasheet (ROHM)

Data Sheet

(8) (7)

(1) (2)

(6) (5)

(3) (4)

4V Drive Nch + Nch MOSFET

SH8K11

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TB
Basic ordering unit (pieces) 2500

SH8K11 ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

30 V

20 V

3.5 A

14 A

1.6 A

14 A

2.0 W / TOTAL

1.4 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(8) (5)

(1)

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

(4)

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

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Data Sheet

SH8K11

 Electrical characteristics (Ta = 25 C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-7098 I

*

- 90 126 ID=3.5A, VGS=4.5V

m

Conditions

=3.5A, VGS=10V

D

- 100 140 ID=3.5A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 85 - pF VDS=10V

- 40 - pF VGS=0V

- 20 - pF f=1MHz

-4-nsI

*

*

-8-nsV

*

*

r

- 18 - ns RL=8.8

*

*

-3-nsR

*

*

f

- 1.9 - nC ID=3.5A, VDD 15V

*

*

g

- 0.8 - nC VGS=5V

*

*

gs

- 0.4 - nC

*

*

=1.7A, VDD 15V

D

=10V

GS

=10

G

Forward transfer admittance l Yfs l 1.5 - - S ID=3.5A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3.5A, VGS=0V

Conditions

2/6

2011.02 - Rev.A

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Data Sheet

SH8K11

Electrical characteristic curves (Ta=25C)

0

0.5

1

1.5

2

2.5

3

3.5

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

0.5

1

1.5

2

2.5

3

3.5

0 2 4 6 8 10

V

GS

= 10V

V

GS

= 4.5V

VGS= 4.0V

VGS= 2.5V

VGS= 2.8V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

1000

0.1 1 10

V

GS

= 4.0V

V

GS

= 4.5V

V

GS

= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

10

100

1000

0.1 1 10

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

10

100

1000

0.1 1 10

VGS= 4.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

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Data Sheet

SH8K11

10

100

1000

0.1 1 10

VGS= 4.0V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

0.1

1

10

0.01 0.1 1 10

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.8 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

10

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

50

100

150

200

0 2 4 6 8 10

ID= 3.5A

ID= 1.75A

Ta=25°C
Pulsed

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

0.01 0.1 1 10

t

f

t

d(on)

t

d(off)

Ta=25°

C

V

DD

= 15V

V

GS

=10V

R

G

=10Ω

Pulsed

t

r

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

0

2

4

6

8

10

0 1 2 3 4 5

Ta=25°C
V

DD

= 15V

I

D

= 3.5A

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

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Data Sheet

SH8K11

1

10

100

1000

0.01 0.1 1 10 100

C

iss

C

rss

Ta=25°C
f=1MHz
VGS=0V

C

oss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

0.1 1 10 100

PW = 10ms

DC operation

Operation in this area is limited by R

DS(ON)

(V

GS

=10V)

P

W

=100us

P

W

=1ms

Ta=25°C
Single Pulse

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Fig.14 Maximum Safe Operating Aera

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

(A)

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth

(ch-a)

=89.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

Ta=25°C
Single Pulse

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

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Data Sheet

SH8K11

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

D.U.T.

D

I

VD

RL

VDD

Fig.2-1 Gate Charge Measurement Circuit

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

6/6

2011.02 - Rev.A

Notes

Notice

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