ROHM SH8J65 Technical data
4V Drive Pch+Pch MOSFET
SH8J65
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications Inner circuit
Type
SH8J65
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
Limits Unit
−30
±20
±7.0
∗1
±28
−1.6
∗1
−28
2.0
∗2
VV
VV
AI
AI
AI
AI
W / TOTAL
W / ELEMENT1.4
°CTch 150
°CTstg −55 to +150
SOP8
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Each lead has same dimensions
(6) (5)
∗2
∗1
(3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state
resistance
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.
Typ. Max.
−−±10 μAV
−30 −−VID= −1mA, VGS=0V
−−−1 μAVDS= −30V, VGS=0V
−1.0 −−2.5 V VDS= −10V, ID= −1mAGate threshold voltage
− 21.5 29.0 I
− 29.0 39.0 mΩ
− 31.0 40.8 I
6.0 −−SV
− 1200 − pF VDS= −10V
− 170
170
−
−
−
−
−
−
−
−−nC
− pF VGS=0V
− pF f=1MHz
− ns
12
40
− ns
− ns
80
65
− ns
− nC
18
3.5
− nC
6.5
Min. Typ. Max.
−−−1.2 V IS= −7A, VGS=0VForward voltage
Unit
=±20V, VDS=0V
GS
mΩ
= −7A, VGS= −10V
D
ID= −3.5A, VGS= −4.5V
= −3.5A, VGS= −4.0V
mΩ
D
= −10V, ID= −7A
DS
V
DD
−15V
ID= −3.5A
V
GS
= −10V
L
=4.3Ω
R
G
=10Ω
R
V
−15V
DD
= −7A
I
D
= −5V
V
GS
=2.1Ω / RG=10Ω
R
L
Unit
Data Sheet SH8J65
Conditions
∗
∗
∗
Conditions
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
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