4V Drive Pch+Pch MOSFET
SH8J65
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications Inner circuit
Type
SH8J65
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
Limits Unit
−30
±20
±7.0
∗1
±28
−1.6
∗1
−28
2.0
∗2
VV
VV
AI
AI
AI
AI
W / TOTAL
W / ELEMENT1.4
°CTch 150
°CTstg −55 to +150
SOP8
(8) (7)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Each lead has same dimensions
(6) (5)
∗2
∗1
(3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state
resistance
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.
Typ. Max.
−−±10 μAV
−30 −−VID= −1mA, VGS=0V
−−−1 μAVDS= −30V, VGS=0V
−1.0 −−2.5 V VDS= −10V, ID= −1mAGate threshold voltage
− 21.5 29.0 I
− 29.0 39.0 mΩ
− 31.0 40.8 I
6.0 −−SV
− 1200 − pF VDS= −10V
− 170
170
−
−
−
−
−
−
−
−−nC
− pF VGS=0V
− pF f=1MHz
− ns
12
40
− ns
− ns
80
65
− ns
− nC
18
3.5
− nC
6.5
Min. Typ. Max.
−−−1.2 V IS= −7A, VGS=0VForward voltage
Unit
=±20V, VDS=0V
GS
mΩ
= −7A, VGS= −10V
D
ID= −3.5A, VGS= −4.5V
= −3.5A, VGS= −4.0V
mΩ
D
= −10V, ID= −7A
DS
V
DD
−15V
ID= −3.5A
V
GS
= −10V
L
=4.3Ω
R
G
=10Ω
R
V
−15V
DD
= −7A
I
D
= −5V
V
GS
=2.1Ω / RG=10Ω
R
L
Unit
Data Sheet SH8J65
Conditions
∗
∗
∗
Conditions
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
DRAIN
CURRENT
I
[A]
DRAIN
CURRENT
I
[A]
Electrical characteristic curves
20
18
16
[A]
D
14
12
10
8
6
4
DRAIN CURRENT : -I
2
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)
VGS= -3.0V
VGS= -2.5V
Ta=25°C
Pulsed
VGS= -10V
V
= -4.5V
GS
= -4.0V
V
GS
V
= -3.5V
GS
20
18
16
D
14
: -
12
10
8
6
4
2
0
0246810
VGS= -10V
V
GS
V
GS
Ta=25°C
Pulsed
= -4.0V
= -3.0V
VGS= -2.5V
VGS= -2.2V
10
VDS= -10V
Pulsed
D
Ta= 125°C
1
Ta= 75°C
: -
Ta= 25°C
Ta= - 25°C
0.1
0.01
1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
Data Sheet SH8J65
100
Ta=25°C
]
Pulsed
Ω
(ON)[m
DS
10
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
100
VGS= -4.0V
]
Pulsed
Ω
(ON)[m
DS
Ta=125°C
Ta=75°C
10
Ta=25°C
Ta= -25°C
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= -4.0V
= -4.5V
V
GS
= -10V
V
GS
[A]
D
100
VGS= -10V
Pulsed
]
Ω
(ON)[m
DS
10
RESISTANCE : R
1
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
100
VDS= -10V
Pulsed
10
1
ADMITTANCE : |Yfs| [S]
FORWARD TRANSFER
0
0.1 1.0 10.0
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
100
VGS= -4.5V
Pulsed
]
Ω
(ON)[m
DS
10
RESISTANCE : R
1
STATIC DRAIN-SOURCE ON-STATE
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
VGS=0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
1
Ta=-25°C
0.1
0.01
REVERSE DRAIN CURRENT : -Is [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
L
Data Sheet SH8J65
100
90
]
80
Ω
70
(ON)[m
60
DS
50
40
30
RESISTAN CE : R
20
STATIC DRAIN-SOURCE ON-STATE
10
051015
GATE-SOURCE VOLTAGE : -VGS[V]
Fig .10 Static D rain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
CAPACIT ANCE : C [pF ]
10
0.01 0.1 1 10 100
ID= -7.0A
ID= -3.5A
Crss
Coss
GATE-SOURCE VOLTAGE : -V
Fi g.13 T ypic al Capa citanc e
vs. Dr ain-Source Voltage
Ta=25°C
Pulsed
Ciss
Ta=25°C
f=1MH z
V
=0V
GS
DS
10000
1000
100
10
SWITC HING TIME : t [ns]
1
0.01 0.1 1 10
1000
100
(A)
D
10
1
DRAIN CURRENT : -I
0.1
0.01
0.1 1 10 100
[V]
td(off)
t
r
DRAIN-CURRENT : -ID[A]
Fi g.11 Swi tching Char acter isti cs
Operation in this area is limited by R
(VGS=-10V)
Ta = 25°C
Single Puls e
MOU NTED ON S ERAMI C BOARD
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig .14 Maximum Safe Operating Aera
t
td(on)
Ta= 25°C
V
= -15V
DD
V
=-10V
GS
R
=10Ω
G
f
Pulsed
DS(ON)
PW=100us
PW=1ms
PW = 10m s
DC
operat ion
10
8
[V]
GS
6
4
2
GATE- SOURCE VOLTAG E : -V
0
0 10203040
TOTAL GATE CHARGE : Qg [nC]
Fi g.12 Dynamic I nput Character isti cs
Ta=25°C
V
= -15V
DD
I
= -7.0A
D
R
=10Ω
G
Pulsed
10
1
0.1
RESIST ANC E : r (t )
0.01
NORM ARI ZED TR ANSI ENT TH ERMA
0.001
Ta = 25°C
Single P ulse : 1Unit
Rth(c h-a)(t) = r(t )×Rth(c h-a)
Rth(c h-a) = 89 .3 °C/ W
<Mounted on a SERAMIC board>
0.001 0.01 0.1 1 10 100 1000
PULSE WI DTH : Pw(s)
Fi g.15 N ormali zed Tr ansient T hermal R esis tance vs. Pul se Width
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
Measurement circuits
V
GS
R
G
I
D.U.T.
D
Data Sheet SH8J65
Pulse Width
V
GS
V
DS
R
L
V
DD
VDS
10%
50% 50%
10% 10%
td(on)
90% 90%
tr
ton toff
90%
td(off)
tf
Fig.16 Switching Time Test Circuit
V
GS
I
G(Const.)
R
G
Fig.18 Gate Charge Test Circuit
D
I
D.U.T.
V
DS
R
L
V
DD
Fig.17 Switching Time Waveforms
VG
g
Q
VGS
Q
gs
Q
gd
Charge
Fig.19 Gate Charge Waveform
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
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Please be sure to implement in your equipment using the Products safety measures to guard
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R1120
A
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