ROHM SH8J62 Technical data

4V Drive Pch+Pch MOSFET

SH8J62

Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET

Features

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Application

Switching

Packaging specifications Inner circuit

Type

SH8J62

Package
Code
Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation
Channel temperature

Range of Storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

Limits Unit

−30
±20

±4.5

∗1

±18

−1.6

∗1

−18

2.0

∗2

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT1.4

°CTch 150
°CTstg −55 to +150

SOP8

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

(3) (4)

Each lead has same dimensions

∗1

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

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Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

V

Static drain-source on-state
resistance

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>

Parameter Symbol

∗ Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10 μAV

−30 −−VID= −1mA, VGS=0V

−−−1 μAVDS= −30V, VGS=0V

−1.0 −−2.5 V VDS= −10V, ID= −1mAGate threshold voltage

− 40 56 I

− 55 77 mΩ

− 60 84 I

3.5 −−SV

− 800 − pF VDS= −10V

− 120

110

−

−

−

−

−

−

−

−−nC

− pF VGS=0V

− pF f=1MHz

− ns

7

15

− ns

− ns

70
50

− ns

− nC

8.0

2.5

− nC

3.0

Min. Typ. Max.

−−−1.2 V IS= −4.5A, VGS=0VForward voltage

Unit

=±20V, VDS=0V

GS

mΩ

= −4.5A, VGS= −10V

D

ID= −2.5A, VGS= −4.5V

= −2.5A, VGS= −4.0V

mΩ

D

= −10V, ID= −4.5A

DS

ID= −2.5A

V

DD

−15V

V

GS

= −10V

L

=6.0Ω

R

G

=10Ω

R
V

−15V

DD

=

−4.5A

I

D

V

=

−5V

GS

=3.3Ω / RG=10Ω

R

L

Unit

Data Sheet SH8J62

Conditions

Conditions

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0

5

10

15

20

0.0 0.2 0.4 0.6 0.8 1.0

VGS= -3.0V

Ta=25°C
Pulsed

VGS= -10V

V

GS

= -4.5V

V

GS

= -4.0V

0.01

0.1

1

10

1.0 1.5 2.0 2.5 3.0

VDS= -10V

Pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= - 25°C

10

100

1000

0.1 1 10

VGS= -4.0V

V

GS

= -4.5V

V

GS

= -10V

Ta=25°C
Pulsed

0.01

0.1

1

10

0.0 0.5 1.0 1.5

VGS=0V

Pulsed

Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=-25°C

0

2

4

6

8

10

12

14

16

18

20

0246810

VGS= -10V

V

GS

= -4.5V

V

GS

= -4.0V

V

= -3.8V

VGS= -3.2V

Ta=25°C
Pulsed

10

100

1000

0.1 1 10

VGS= -4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

100

1000

0.1 1 10

VGS= -10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0.1

1

10

0.01 0.1 1 10

VDS= -10V

Pulsed

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

100

1000

0.1 1 10

VGS= -4.0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.1 Typical output characteristics(Ⅰ)

Fig.2 Typical output characteristics(Ⅱ)

Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Fig.8 Forward Transfer Admittance
vs. Drain Current

DRAIN CURRENT : -I

D

[A]

DRAIN-SOURCE VOLTAGE : -VDS[V]

DRAIN-SOURCE VOLTAGE : -VDS[V]

DRAIN CURRENT : -I

D

[A]

DRAIN CURRENT : -I

D

[A]

GATE-SOURCE VOLTAGE : -VGS[V]

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

[m

Ω

]

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

[m

Ω

]

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

[mΩ

]

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

[m

Ω

]

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

REVERSE DRAIN CURRENT : -Is [A]

SOURCE-DRAIN VOLTAGE : -VSD [V]

VGS= -3.5V

Electrical characteristic curves

Data Sheet SH8J62

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0

50

100

150

200

0 5 10 15

Ta=25°C
Pulsed

ID= -2.5A

ID= -4.5A

0

2

4

6

8

10

0 5 10 15

Ta=25°C
V

DD

= -15V

I

D

= -4.5A

R

G

=10

Ω

Pulsed

10

100

1000

10000

0.01 0.1 1 10 100

Ciss

Coss

Crss

Ta=25°C
f=1MHz
V

GS

=0V

0.01

0.1

1

10

100

1000

0.1 1 10 100

PW = 1ms

Ta = 25°C
Single Pulse

MOUNTE D ON CE RAMIC BOARD

DC operation

Operation in this area is limited by R

DS(on)

(VGS=-10V)

PW=100us

PW=10ms

0.001

0.01

0.1

1

10

0.001 0.01 0.1 1 10 100 1000

Ta = 25°C
Single Puls e : 1U nit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a ) = 89.3 ° C/W
<Mounte d on a CERAM IC bo ard>

1

10

100

1000

10000

0.01 0.1 1 10

t

r

t

f

t

d(on)

t

d(off)

Ta=25°C
V

DD

= -15V

V

GS

=-10V

R

G

=10Ω

Pulsed

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

Fig.12 Dynamic Input Characteristics

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Fig.11 Switching Characteristic s

Fig.14 Maximum Safe Operating Area

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

[m

Ω

]

GATE-SOURCE VOLTAGE : -VGS[V]

Switching Time : t [ns]

DRAIN-CURRENT : -ID[A]

GATE-SOURCE VOLTAGE : -V

GS

[V]

DRAIN-SOURCE VOLTAGE : -V

[V]

CAPACITANCE : C [pF]

DRAIN-SOURCE VOLTAGE : -VDS[V]

DRAIN CURRENT : -I

D

(A)

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

TOTAL GATE CHARGE : Qg [nC]

Data Sheet SH8J62

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t

S

F

%

V

V

Fig.2-1 Gate Charge Test Circuit

I

S

Fig.2-2 Gate Charge Waveform

V

Measurement circuits

V

GS

R

G

I

D.U.T.

D

Data Sheet SH8J62

Pulse Width

GS

V

D

R

L

V

DD

10%

50% 50%

DS

td(on)

90% 90%

ton toff

90%

10% 10

td(off)

tr

tf

Fig.1-1 Switching Time Test Circui

V

G(Const.)

GS

R

G

D

I

D.U.T.

V

D

R

L

V

DD

ig.1-2 Switching Time Waveforms

V

G

g

Q

GS

Q

gs

Q

gd

Charge

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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
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information, ROHM shall bear no responsibility for such damage.

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